.....................................................................................................................................-0.6V to V
CC
+1.0V
Storage temperature ................................................................................................................................. -65°C to 150°C
Ambient temperature under bias................................................................................................................. -40°C to 85°C
ESD protection on all pins.......................................................................................................................................... 4 kV
† NOTICE:
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Electrical Characteristics:
Industrial (I):
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 2.5V
Min.
0.7 V
CC
-0.3
-0.3
0.05 Vcc
Max.
V
CC
+1
0.3 V
CC
0.2 V
CC
—
Units
V
V
V
V
V
CC
≥
2.5V
V
CC
< 2.5V
V
CC
≥
2.5V
(Note
1)
T
A
= -40°C to +85°C
T
A
= -20°C to +85°C
Test Conditions
DC CHARACTERISTICS
Param.
Symbol
No.
D1
D2
D3
V
IH
V
IL
V
HYS
Characteristic
High-Level Input
Voltage
Low-Level Input
Voltage
Hysteresis of Schmitt
Trigger Inputs
(SCIO)
High-Level Output
Voltage
Low-Level Output
Voltage
Output Current Limit
(Note
2)
Input Leakage
Current (SCIO)
Internal Capacitance
(all inputs and
outputs)
D4
D5
D6
D7
D8
V
OH
V
OL
I
O
I
LI
C
INT
V
CC
-0.5
V
CC
-0.5
—
—
—
—
—
—
—
—
0.4
0.4
±4
±3
±1
7
V
V
V
V
mA
mA
µA
pF
I
OH
= -300 µA, V
CC
= 5.5V
I
OH
= -200 µA, Vcc = 2.5V
I
O
I = 300 µA, V
CC
= 5.5V
I
O
I = 200 µA, Vcc = 2.5V
V
CC
= 5.5V
(Note
1)
Vcc = 2.5V
(Note
1)
V
IN
= V
SS
or V
CC
T
A
= 25°C, F
CLK
= 1 MHz,
V
CC
= 5.0V
(Note
1)
V
CC
= 5.5V, F
BUS
= 100 kHz,
C
B
= 100 pF
V
CC
= 2.5V, F
BUS
= 100 kHz,
C
B
= 100 pF
V
CC
= 5.5V
V
CC
= 2.5V
V
CC
= 5.5V, T
A
= 85°C
V
CC
= 5.5V
D9
I
CCREAD
Read Operating
Current
—
—
3
1
5
3
1
50
mA
mA
mA
mA
µA
µA
D10
D11
D12
Note 1:
2:
I
CCWRITE
Write Operating
Current
Iccs
I
CCI
Standby Current
Idle Mode Current
—
—
—
—
This parameter is periodically sampled and not 100% tested.
The SCIO output driver impedance will vary to ensure I
O
is not exceeded.
2008-2018 Microchip Technology Inc.
DS20002122E-page 2
11AA02E48/11AA02E64
TABLE 1-2:
AC CHARACTERISTICS
Electrical Characteristics:
Industrial (I):
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 2.5V
Min.
10
10
—
—
Max.
100
100
±0.06
±0.50
Units
kHz
µs
UI
% per byte
Note 2
T
A
= -40°C to +85°C
T
A
= -20°C to +85°C
Test Conditions
AC CHARACTERISTICS
Param.
Symbol
No.
1
2
3
4
F
BUS
T
E
T
IJIT
F
DRIFT
Characteristic
Serial Bus
Frequency
Bit Period
Input Edge Jitter
Tolerance
Serial Bus
Frequency Drift Rate
Tolerance
Serial Bus
Frequency Drift Limit
Output Edge Jitter
SCIO Input Rise
Time (Note
1)
SCIO Input Fall Time
(Note
1)
Standby Pulse Time
Start Header Setup
Time
Start Header Low
Pulse Time
Input Filter Spike
Suppression (SCIO)
Write Cycle Time
(byte or page)
Endurance (per
page)
5
6
7
8
9
10
11
12
13
14
F
DEV
T
OJIT
T
R
T
F
T
STBY
T
SS
T
HDR
T
SP
T
WC
—
—
—
—
600
10
5
—
—
1M
±5
±0.25
100
100
—
—
—
50
5
10
—
% per command
UI
ns
ns
µs
µs
µs
ns
ms
ms
cycles
Note 1
Write, WRSR commands
ERAL, SETAL commands
25°C, V
CC
= 5.5V
(Note
3)
Note 2
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
A Unit Interval (UI) is equal to 1-bit period (T
E
) at the current bus frequency.
3:
This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance
™
Model which can be obtained on Microchip’s website:
www.microchip.com.
TABLE 1-3:
AC Waveform
V
LO
= 0.2V
AC TEST CONDITIONS
V
HI
= V
CC
- 0.2V
C
L
= 100 pF
Timing Measurement Reference Level
Input
Output
0.5 V
CC
0.5 V
CC
2008-2018 Microchip Technology Inc.
DS20002122E-page 3
11AA02E48/11AA02E64
FIGURE 1-1:
10
BUS TIMING – START HEADER
11
2
SCIO
Data ‘0’
Data ‘1’
Data ‘0’
Data ‘1’
Data ‘0’
Data ‘1’
Data ‘0’
Data ‘1’ MAK bit NoSAK bit
FIGURE 1-2:
BUS TIMING – DATA
2
7
12
8
SCIO
Data ‘0’
Data ‘1’
Data ‘1’
Data ‘0’
FIGURE 1-3:
BUS TIMING – STANDBY PULSE
9
SCIO
Standby
Mode
FIGURE 1-4:
BUS TIMING – JITTER
2
3
2
3
6
6
6
6
Ideal Edge
from Master
Ideal Edge
from Master
Ideal Edge
from Slave
Ideal Edge
from Slave
2008-2018 Microchip Technology Inc.
DS20002122E-page 4
11AA02E48/11AA02E64
2.0
2.1
FUNCTIONAL DESCRIPTION
Principles of Operation
The 11AA02EXX family of serial EEPROMs support
the UNI/O
®
protocol. They can be interfaced with
microcontrollers,
including
Microchip’s
PIC
®
microcontrollers, ASICs, or any other device with an
available discrete I/O line that can be configured
properly to match the UNI/O protocol.
The 11AA02EXX devices contain an 8-bit instruction
register. The devices are accessed via the SCIO pin.
Data is embedded into the I/O stream through
Manchester encoding. The bus is controlled by a
master device which determines the clock period,
controls the bus access and initiates all operations,
while the 11AA02EXX works as slave. Both master
and slave can operate as transmitter or receiver, but
the master device determines which mode is active.
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