IS64LV25616AL
256K x 16 HIGH SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
FEATURES
• High-speed access time: 10, 12 ns
• CMOS low power operation
• Low stand-by power:
Less than 5 m
A
(typ.) CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Temperature Offerings:
Option A1: –40
o
C to +85
o
C
Option A2: –40
o
C to +105
o
C
Option A3: –40
o
C to +125
o
C
• Lead-free available
ISSI
JULY 2006
®
DESCRIPTION
The
ISSI
IS64LV25616AL is a high-speed, 4,194,304-bit
static RAM organized as 262,144 words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS technol-
ogy. This highly reliable process coupled with innovative
circuit design techniques, yields high-performance and low
power consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE.
The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS64LV25616AL is packaged in the JEDEC standard
44-pin TSOP Type II and 48-pin Mini BGA (8mm x 10mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A17
DECODER
256K x 16
MEMORY ARRAY
V
DD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
07/05/06
1
IS64LV25616AL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
V
DD
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
V
DD
Related to GND
Storage Temperature
Power Dissipation
Value
–0.5 to V
DD
+0.5
–0.3 to +4.0
–65 to +150
1.0
Unit
V
V
°C
W
ISSI
®
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
OPERATING RANGE
Options
A1
A2
A3
Ambient Temperature
–40°C to +85°C
–40°C to +105°C
–40°C to +125°C
V
DD
3.3V +10%, -5%
3.3V +10%, -5%
3.3V +10%, -5%
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
GND
≤
V
IN
≤
V
DD
A1
A2
A3
A1
A2
A3
Test Conditions
V
DD
= Min., I
OH
= –4.0 mA
V
DD
= Min., I
OL
= 8.0 mA
Options
Min.
2.4
—
2.0
-0.3
-2
-5
-10
-2
-5
-10
Max.
—
0.4
V
DD
+ 0.3
0.8
2
5
10
2
5
10
Unit
V
V
V
V
µA
I
LO
Output Leakage
GND
≤
V
OUT
≤
V
DD
,
Outputs Disabled
µA
Notes:
1. V
IL
(min.) = –2.0V for pulse width less than 10 ns.
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
07/05/06
IS64LV25616AL
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol Parameter
I
CC
V
DD
Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = f
MAX
.
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
V
DD
= Max.,
CE
≥
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
Options
A1
A2
A3
A1
A2
A3
A1
A2
A3
A1
A2
A3
typ
(2)
-10
Min. Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
100
—
—
50
—
—
20
—
—
15
—
—
5
-12
Min. Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
110
120
—
55
60
—
30
40
—
25
35
5
ISSI
Unit
mA
®
1
2
mA
I
SB
3
mA
mA
I
SB
1
I
SB
2
4
5
6
7
8
9
10
11
12
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. Shaded area product
in development
2. Typical values are measured at V
DD
= 3.3V, T
A
= 25
o
C and not 100% tested.
CAPACITANCE
(1)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
07/05/06
5
国产芯片交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
