VS-30TPS..PbF Series, VS-30TPS..-M3 Series
www.vishay.com
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 30 A
2
(A)
FEATURES
• Designed and qualified
JEDEC
®
-JESD47
according
to
• 125 °C max. operating junction temperature
3
2
1
1 (K) (G) 3
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Available
TO-247AC
APPLICATIONS
PRODUCT SUMMARY
Package
Diode variation
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
TO-247AC
Single SCR
20 A
800 V, 1200 V
1.3 V
45 mA
-40 °C to 125 °C
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding and battery
charge
DESCRIPTION
The VS-30TPS... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
RMS
V
RRM
/V
DRM
I
TSM
V
T
dV/dt
dI/dt
T
J
20 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
20
A
30
800/1200
300
1.3
500
150
- 40 to 125
V
A
V
V/μs
A/μs
°C
UNITS
VOLTAGE RATINGS
PART NUMBER
V
RRM
/V
DRM
, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
800
1200
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
900
10
VS-30TPS12PbF, VS-30TPS12-M3
1300
I
RRM
/I
DRM
AT 125 °C
mA
VS-30TPS08PbF, VS-30TPS08-M3
Revision: 06-Feb-14
Document Number: 94386
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30TPS..PbF Series, VS-30TPS..-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
Maximum on-state
voltage
drop
On-state slope resistance
Threshold
voltage
Maximum reverse and direct leakage current
Maximum holding current
Maximum latching current
Maximum rate of rise of off-state
voltage
Maximum rate of rise of turned-on current
SYMBOL
I
T(AV)
I
RMS
I
TSM
I
2
t
I
2
t
V
TM
r
t
V
T(TO)
I
RM
/I
DM
I
H
I
L
dV/dt
dI/dt
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no
voltage
reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no
voltage
reapplied
t = 0.1 to 10 ms, no
voltage
reapplied
20 A, T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
RRM
/V
DRM
TEST CONDITIONS
T
C
= 95 °C, 180° conduction half sine wave
VALUES
20
30
250
300
310
442
4420
1.3
12
1.0
0.5
10
150
200
500
150
V/µs
A/µs
mA
A
2
s
A
2
s
V
m
V
A
UNITS
Anode supply = 6 V, resistive load, initial I
T
= 1 A, T
J
= 25 °C
Anode supply = 6 V, resistive load,
T
J
= 25 °C
T
J
= T
J
maximum, linear to 80 % V
DRM
, R
g
-k = Open
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate
voltage
SYMBOL
P
GM
P
G(AV)
+ I
GM
- V
GM
Anode supply = 6 V, resistive load, T
J
= - 10 °C
Maximum required DC gate current to trigger
I
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Maximum required DC gate
voltage
to trigger
Maximum DC gate
voltage
not to trigger
Maximum DC gate current not to trigger
Anode supply = 6 V, resistive load, T
J
= - 10 °C
V
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
V
GD
I
GD
T
J
= 125 °C, V
DRM
= Rated value
TEST CONDITIONS
VALUES
8.0
2.0
1.5
10
60
45
20
2.5
2.0
1.0
0.25
2.0
mA
V
mA
UNITS
W
A
V
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gt
t
rr
t
q
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
VALUES
0.9
4
110
µs
UNITS
Revision: 06-Feb-14
Document Number: 94386
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30TPS..PbF Series, VS-30TPS..-M3 Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Maximum thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-247AC (JEDEC)
SYMBOL
T
J
, T
Stg
R
thJC
DC operation
R
thJA
R
thCS
Mounting surface, smooth and greased
40
0.2
6
0.21
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
TEST CONDITIONS
VALUES
-40 to 125
0.8
UNITS
°C
Mounting torque
Marking device
30TPS08
30TPS12
Maximum Allowable Cas T
e emperature (°C)
Maximum Allowable Case Temperature (°C)
130
30T .. S
PS eries
R
thJC
(DC) = 0.8 °C/ W
130
30T .. S
PS eries
R
thJC
(DC) = 0.8 °C/ W
120
120
Conduction Angle
110
Conduction Period
110
30°
100
60°
90°
120°
180°
100
30°
90
60°
90°
120°
0
5
10
15
180° DC
25
30
35
90
0
5
10
15
20
25
Average On-state Current (A)
80
20
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Revision: 06-Feb-14
Document Number: 94386
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30TPS..PbF Series, VS-30TPS..-M3 Series
www.vishay.com
Vishay Semiconductors
Peak Half S Wave On-state Current (A)
ine
280
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
260
Initial T = 125°C
J
@60 Hz 0.0083 s
240
@50 Hz 0.0100 s
220
200
180
160
140
120
1
10
100
Numb er Of Equa l Amplitude Ha lf Cyc le Current Pulses (N)
Maximum Average On-state Power Loss (W)
60
50
40
30
20
10
0
0
5
10
15
20
25
30
Average On-state Current (A)
180°
120°
90°
60°
30°
R Limit
MS
Conduction Angle
30T .. S
PS eries
T
J
= 125°C
30T .. S
PS eries
Fig. 3 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average On-state Power Loss (W)
Peak Half S
ine Wave On-s
tate Current (A)
80
DC
180°
120°
90°
60°
30°
300
280
260
240
220
200
180
160
140
120
0.01
30T .. S
PS eries
0.1
Pulse T
rain Duration (s)
1
Maximum Non Repetitive S
urge Current
Versus Pulse T in Duration. Control
ra
Of Conduc tion May Not Be Ma intained.
Initial T
J
= 125°C
No Voltage R
eapplied
R
ated V
RRM
R
eapplied
60
MS
40 R Limit
Conduction Period
20
30T .. S
PS eries
T
J
= 125°C
0
0
10
20
30
40
50
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
Instantaneous On-state Current (A)
T
J
= 25°C
T
J
= 125°C
100
10
30T .. S
PS eries
1
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Revision: 06-Feb-14
Document Number: 94386
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30TPS..PbF Series, VS-30TPS..-M3 Series
www.vishay.com
Vishay Semiconductors
T
rans
ient T
hermal Impedance Z
thJC
(°C/ W)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
0.1
D = 0.08
S
teady S
tate Value
(DC Operation)
S
ingle Pulse
30T .. S
PS eries
0.01
0.0001
0.001
0.01
S
quare Wave Pulse Duration (s
)
0.1
1
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
100
Instantaneous Gate Voltage (V)
Rec tangular gate p ulse
a )R ommend ed loa d line for
ec
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)R
ecommend ed load line for
<= 30% rated di/ dt: 10 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a )
(b )
T = -10 °C
J
T = 25 °C
J
T = 125 °C
J
1
VGD
IGD
0.1
0.001
0.01
(4)
(3)
(2)
(1)
30T .. S
PS eries
0.1
1
Frequency Limited by PG(AV)
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
Revision: 06-Feb-14
Document Number: 94386
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
