TO-264
ARF468AG
ARF468BG
Common
Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
150V
300W
45MHz
The ARF468A and ARF468B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have been
optimized for both linear and high efficiency classes of operation.
•
Specified 150 Volt, 40.68 MHz Characteristics:
•
Output Power = 300 Watts.
•
Gain = 15dB (Class AB)
•
Efficiency = 75% (Class C)
MAXIMUM RATINGS
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
θJC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Junction to Case
•
Low Cost Common Source RF Package.
•
Low Vth thermal coefficient.
•
Low Thermal Resistance.
•
Optimized SOA for Superior Ruggedness.
All Ratings: T
C
= 25°C unless otherwise specified.
Ratings
UNIT
Volts
Amps
Volts
Watts
°C/W
°C
500
500
22
±30
300
0.35
-55 to 150
300
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 µA)
Drain-Source On-State Resistance
1
MIN
TYP
MAX
UNIT
Volts
500
0.3
25
250
±100
5
2.5
8
4
9
5
(V
GS
= 10V
,
I
D
= 11A
)
ohms
µA
nA
mhos
Rev A 7-2014
050-4982
Zero Gate Voltage Drain Current (V
DS
= 500V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 400V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 11A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
DS
= 150V
f = 1 MHz
V
GS
= 0V
MIN
TYP
ARF468AG_BG
MAX
UNIT
pF
2230
230
105
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
η
Ψ
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 10:1
Test Conditions
f = 40.68 MHz
V
GS
= 2.5V
V
DD
= 150V
P
out
= 300W
MIN
TYP
MAX
UNIT
dB
%
14
70
15
75
No Degradation in Output Power
1 Pulse Test: Pulse width < 380µS, Duty Cycle < 2%
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
1.0E−8
C
iss
I
D
, DRAIN CURRENT (A)
CAPACITANCE (pf)
1.0E−9
60
50
40
30
20
10
T
J
= +125°C
1.0E−11
0
50
100
150
200
250
300
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1, Typical Capacitance vs. Drain-to-Source Voltage
0
2
4
6
8
10
V
DS
> I
D
(ON) x R
DS
(ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
T
J
= -55°C
T
J
= +25°C
C
oss
1.0E−10
C
rss
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Transfer Characteristics
52
OPERATION HERE
LIMITED BY R
(ON)
DS
8
7
V
GS(th)
, THRESHOLD VOLTAGE
(NORMALIZED)
100uS
6
5
4
3
2
1
0
50
100
150
T
C
, CASE TEMPERATURE (°C)
Figure 4, Typical Threshold Voltage vs Temperature
0
-50
I
D
, DRAIN CURRENT (A)
10
5
1
.5
T
C
=+25°C
T
J
=+150°C
SINGLE PULSE
1
10
100
1000
1mS
10mS
100mS
050-4982 Rev A 7-2014
.1
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 3, Typical Maximum Safe Operating Area
TYPICAL PERFORMANCE CURVES
60
50
I
D
, DRAIN CURRENT (A)
40
30
20
10
0
15V
ARF468AG_BG
10V
8V
7.5V
6.5V
6V
5.5V
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5, Typical Output Characteristics
0.40
Z
JC
, THERMAL IMPEDANCE (°C/W)
q
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10
-5
0.3
0.1
0.05
10
-4
0.9
0.7
0.5
SINGLE PULSE
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 6a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
RC MODEL
Junction
temp (°C)
0.113
°C/W
Power
(watts)
0.236
°C/W
Case temperature (°C)
0.147 F
0.0130 F
Figure 6b,
TRANSIENT THERMAL IMPEDANCE
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
2.0
13.5
27.1
40.7
Z
in
(Ω)
18 - j 10.5
2.7 - j 4.6
1.8 - j 1.6
1.7 - j 0.2
Z
OL
(Ω)
21 - j 1.4
11.7 - j 10.4
7.7 - j 10
050-4982 Rev A 7-2014
17.5 - j 7.8
Z
IN
- Gate shunted with 25Ω
I
dq
= 0
Z
OL
- Conjugate of optimum load for 300 Watts output at V
dd
=125V
ARF468AG_BG
L4
Bias
+
0-12V
-
RF
Input
R1
C6
L1
C3
TL1
C1
DUT
R2
R3
L3
C9
L2
C4
C5
C7
C8
+
150V
-
RF
Output
C2
Typical 40.68 MHz Test Circuit
R1- R3 -- 1kΩ 0.5Ω Carbon
TL1 -- 34Ω t-line 0.175” x 1”
C1 .45" from gate pin.
PCB -- 0.062” FR4, Er=4.7
C1 -- 2200pF ATC 700B
C2-C5 -- Arco 465 Mica trimmer
C6-C8 -- .1 µF 500V ceramic chip
C9 -- 3x 2200 pF 500V chips COG
L1 -- 4t #22 AWG .25"ID .25 "L ~87nH
L2 -- 5t #16 AWG .312" ID .35"L ~176nH
L3 -- 10t #24 AWG .25"ID ~.5µH
L4 -- VK200-4B ferrite choke 3µH
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
TO-264
(L) Package Outline
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
Dimensions in Millimeters and (Inches)
NOTE: These two parts comprise a symmetric pair of RF
power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.
Drain
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
Device
ARF - A
Gate
Source
Drain
ARF - B
Drain
Source
Gate
050-4982 Rev A 7-2014
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
ARF468AG_BG
Disclaimer:
The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND
CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used
without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with
Microsemi, then the terms of such Agreement will also apply . This document and the information contained herein may not be modified, by
any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or
otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This
product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or
applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or
use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any
patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or
customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s re-
sponsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein
is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi
specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is
subject to other terms and conditions which can be located on the web at http://www.microsemi.com/terms-a-conditions.
050-4982 Rev A 7-2014
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
