SILICON RFIC LOW
CURRENT AMPLIFIER UPC8179TB
FOR MOBILE COMMUNICATIONS
FEATURES
• HIGH DENSITY SURFACE MOUNTING:
6 Pin Super Minimold Package (2.0 x 1.25 x 0.9 mm)
• SUPPLY VOLTAGE:
V
CC
= 2.4 to 3.3 V
• HIGH EFFICIENCY:
P
O
(1dB) = +3.0 dBm TYP at f = 1.0 GHz
P
O
(1dB) = +1.5 dBm TYP at f = 1.9 GHz
P
O
(1dB) = +1.0 dBm TYP at f = 2.4 GHz
• POWER GAIN:
G
P
= 13.5 dB TYP at f = 1.0 GHz
G
P
= 15.5 dB TYP at f = 1.9 GHz
G
P
= 15.5 dB TYP at f = 2.4 GHz
• EXCELLENT ISOLATION:
ISL = 44 dB TYP at f = 1.0 GHz
ISL = 42 dB TYP at f = 1.9 GHz
ISL = 41 dB TYP at f = 2.4 GHz
• LOW CURRENT CONSUMPTION:
I
CC
= 4.0 mA TYP AT VCC = 3.0 V
• OPERATING FREQUENCY:
I
CC
= 4.0 mA TYP AT VCC = 3.0 V
• LIGHT WEIGHT:
7 mg (standard Value)
POWER GAIN vs. FREQUENCY
+20
V
CC
= 3.0 V
+10
T
A
= -40°C
T
A
= +25°C
T
A
= +85°C
0
2.4 GHz
–10
–20
1.0 GHz
–30
1.9 GHz
–40
0.1
0.3
1.0
3.0
Output match for best performance
at each frequency
DESCRIPTION
NEC's UPC8179TB is a silicon monolithic integrated circuit
designed as amplifier for mobile communications. This IC can
realize low current consumption with external chip inductor
which can be realized on internal 50Ω wideband matched IC.
This low current amplifier uns on 3.0 V. This IC is manufactured
using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process)
silicon bipolar process. This process uses direct silicon nitride
passivation film and gold electrodes. These materials can
protect the chip surface from pollution and prevent corrosion/
migration. Thus this IC has exellent performance uniformity
and reliability.
APPLICATIOIN
• Buffer amplifiers for 0.1 to 2.4 GHz mobile communications
systems.
ELECTRICAL CHARACTERISTICS,
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
GP
Power Gain,
PARAMETERS AND CONDITIONS
Circuit Current (no input signal)
f = 1.0 GHz, P
IN
= -30 dBm
f = 1.9 GHz, P
IN
= -30 dBm
f = 2.4 GHz, P
IN
= -30 dBm
f = 1.0 GHz, P
IN
= -30 dBm
f = 1.9 GHz, P
IN
= -30 dBm
f = 2.4 GHz, P
IN
= -30 dBm
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.0 GHz, P
IN
= -30 dBm
f = 1.9 GHz, P
IN
= -30 dBm
f = 2.4 GHz, P
IN
= -30 dBm
(Unless otherwise specified, T
A
= +25°C, V
CC
= V
OUT
= 3.0 V, Z
S
= Z
L
= 50Ω, at LC matched Frequency)
UPC8179TB
S06
UNITS
mA
dB
MIN
2.9
11.0
13.0
13.0
39.0
37.0
36.0
-0.5
-2.0
-3.0
–
–
–
4.0
4.0
6.0
TYP
4.0
13.5
15.5
15.5
44.0
42.0
41.0
3.0
1.5
1.0
5.0
5.0
5.0
7.0
7.0
9.0
MAX
5.4
15.5
17.5
17.5
–
–
–
–
–
–
6.5
6.5
6.5
–
–
–
ISOL
Isolation,
dB
P
1dB
Output Power at
1 dB gain
compression,
Noise Figure,
dB
NF
dB
RL
IN
Input Return Loss,
(without matching
circuit)
dB
California Eastern Laboratories
UPC8179TB
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CC
I
CC
P
D
T
OP
T
STG
P
IN
PARAMETERS
Supply Voltage, Pins 4 & 6
Circuit Current
Power Dissipation
2
Operating Temperature
Storage Temperature
Input Power
UNITS
V
mA
mW
°C
°C
dBm
RATINGS
3.6
15
270
-40 to +85
-55 to +150
+5
RECOMMENDED
OPERATING CONDITIONS
SYMBOLS
V
CC
T
A
PARAMETERS
Supply Voltage
Operating Ambient
Temperature
UNITS MIN
V
°C
2.7
-40
TYP MAX
3.0
+25
3.3
+85
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (T
A
= +85°C).
PIN FUNCTIONS
Pin No.
1
Symbol
INPUT
Pin Voltage
1.09 V
Description
Signal Input Pin. A internal
matching circuit, configured with
resistors, enable 50 W connection
over a wide band. This pin must
be coupled to signal source with
capacitor for DC cut.
Ground pin. This pin should be
connected to the system ground with
minimum inductance. Ground pattern
on the board should be formed as
wide as possible. All the ground pins
must be connected together with
wide ground pattern to decrease
impedance difference.
Signal output pin. This pin is
designed as collector output. Due
to the high impedance output, this
pin should be externally equipped
with matching LC matching circuit
to next stage. For L, a size 1005
chip inductor can be chosen.
Power supply pin. This pin should
be externally equipped with bypass
capacitor to minimize its impedance.
Internal Equivalent Circuit
6
4
2
3
5
GND
through external inductor
4
OUTPUT
Same as V
CC
voltage
2
3
1
5
6
V
CC
2.4 to 3.3
TYPICAL PERFORMANCE CURVES
(Unless otherwise specified, T
A
= 25˚C)
CIRCUIT CURRENT vs. VOLTAGE
5
No signals
CIRCUIT CURRENT vs. TEMPERATURE
5
No signals
Vcc = 3.0 V
Circuit Current, I
CC
(mA)
3
Circuit Current, I
CC
(mA)
0
2
3
4
4
4
3
2
2
1
1
0
1
0
–60
–40
–20
0
+20
+40
+60
+80
+100
Voltage, V
CC
(V)
Temperature, T
A
(°C)
TYPICAL PERFORMANCE CURVES
(Unless otherwise specified, T
A
= 25˚C)
1.0 GHz Output Port Matching
GAIN vs. FREQUENCY
+20
Vcc = 3.0 V
+10
TA = –40 ºC
–20
– 10
ISOLATION vs. FREQUENCY
V
CC
= 3.0 V
Isolation, ISOL (dB)
Gain, G
P
(dB)
0
TA = +25 ºC
–10
TA = +85ºC
–30
T
A
= –40 ºC
–40
T
A
= +25ºC
–20
–50
–30
–60
T
A
= +85 ºC
–40
0.1
0.3
1.0
3.0
–70
0.1
0.3
1.0
3.0
Frequency, f (GHz)
Frequency, f (GHz)
INPUT RETURN LOSS vs. FREQUENCY
0
V
cc
= 3.0 V
OUTPUT RETURN LOSS vs. FREQUENCY
+5
V
CC
= 3.0 V
Output Return Loss, RL
OUT
(dBm)
Input Return Loss, RL
IN
(dB)
–5
T
A
= +85 ºC
0
TA = –40ºC
TA = +25ºC
–10
TA = +85ºC
–15
–10
T
A
= +25 ºC
–15
T
A
= –40 ºC
–5
–20
–25
–20
–30
0.1
0.3
1.0
3.0
–25
0.1
0.3
1.0
3.0
Frequency, f (GHz)
Frequency, f (GHz)
OUTPUT POWER vs. INPUT POWER
+10
+5
V
CC
= 3.0 V
T
A
= –40ºC
0
T
A
= +85ºC
–5
T
A
= +25ºC
–10
–15
–20
–25
–30
–40
–35
–30
–25
–20
–15
–10
–5
0
+5
THIRD ORDER INTERMODULATION DISTORTION vs.
OUTPUT POWER OF EACH TONE
0
Thirf Order Intermodulation Distortion,
IM
3
(dBc)
f1 = 1 000 MHz
-10
f2 = 1 001 MHz
Output Power, P
OUT
(dBm)
-20
Vcc = 2.4 V
Vcc = 3.0 V
-30
-40
Vcc = 3.3 V
-50
-60
–20
–15
–10
–5
0
+5
Input Power, P
IN
(dBm)
Output Power of Each Tone, P
OUT
(dBm)
TYPICAL PERFORMANCE CURVES
(Unless otherwise specified, T
A
= 25˚C)
1.0 GHz Output Port Matching
NOISE FIGURE vs. VOLTAGE
6.0
T
A
= +85 ºC
5.5
Noise Figure, NF (dB)
5.0
T
A
= +25 ºC
4.5
4.0
T
A
= –40 ºC
3.5
3.0
2.0
2.5
3.0
3.5
Voltage, V
CC
(V)
1.9 GHz Output Port Matching
ISOLATION vs. FREQUENCY
–10
Vcc = 3.0 V
+10
T
A
= +25ºC
T
A
= –40ºC
GAIN vs. FREQUENCY
+20
Vcc = 3.0 V
–20
Isolation, ISOL (dB)
Gain, G
P
(dB)
0
T
A
= +85ºC
–10
–30
T
A
= +25ºC
–40
T
A
= –40ºC
–20
–50
T
A
= +85ºC
–60
–30
–40
0.1
0.3
1.0
3.0
–70
0.1
0.3
1.0
3.0
Frequency, f (GHz)
Frequency, f (GHz)
INPUT RETURN LOSS vs. FREQUENCY
0
T
A
= +85ºC
OUTPUT RETURN LOSS vs. FREQUENCY
+5
V
CC
= 3.0 V
Output Return Loss, RL
OUT
(dBm)
Input Return Loss, RL
IN
(dB)
–5
T
A
= +25ºC
–10
T
A
= –40ºC
0
–5
–15
–10
–15
T
A
= +85ºC
T
A
= +25ºC
–20
–20
T
A
= –40ºC
–25
0.1
0.3
1.0
3.0
–25
Vcc = 3.0 V
0.1
0.3
1.0
3.0
–30
Frequency, f (GHz)
Frequency, f (GHz)
TYPICAL PERFORMANCE CURVES
(Unless otherwise specified, T
A
= 25˚C)
1.9 GHz Output Port Matching
OUTPUT POWER vs. INPUT POWER
+10
0
Thirf Order Intermodulation Distortion,
IM
3
(dBc)
T
A
= –40ºC
+5
Output Power, P
OUT
(dBm)
-10
f
1
= 1 900 MHz
f
2
= 1 901 MHz
0
T
A
= +25ºC
–5
–10
T
A
= +85ºC
–15
–20
–25
V
CC
= 3.0 V
–30
–40
–35
–30
–25
–20
–15
–10
–5
0
+5
-20
Vcc = 3.3 V
-30
Vcc = 2.4 V
-40
Vcc = 3.0 V
-50
-60
–20
–15
–10
–5
0
+5
Input Power, P
IN
(dBm)
Output Power of Each Tone, P
OUT
(dBm)
NOISE FIGURE vs. VOLTAGE
5.5
T
A
= +85 ºC
Noise Figure, NF (dB)
5.0
4.5
T
A
= +25 ºC
4.0
3.5
T
A
= –40 ºC
3.0
2.0
2.5
3.0
3.5
Voltage, V
CC
(V)
2.4 GHz Output Port Matching
GAIN vs. FREQUENCY
+20
V
CC
= 3.0 V
+10
T
A
= –40ºC
ISOLATION vs. FREQUENCY
–10
V
CC
= 3.0 V
–20
Isolation, ISOL (dB)
T
A
= +25ºC
Gain, G
P
(dB)
0
–30
T
A
= +25ºC
–10
–40
T
A
= –40ºC
–50
–20
T
A
= +85ºC
–30
–60
T
A
= +85ºC
–40
0.1
0.3
1.0
3.0
–70
0.1
0.3
1.0
3.0
Frequency, f (GHz)
Frequency, f (GHz)
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