IRGI4086PbF
PDP TRENCH IGBT
Features
l
Advanced Trench IGBT Technology
l
Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
TM
)
l
Low V
CE(on)
and Energy per Pulse (E
PULSE
for Improved Panel Efficiency
l
High Repetitive Peak Current Capability
l
Lead Free Package
PD - 96223
Key Parameters
V
CE
min
V
CE(ON)
typ. @ I
C
= 25A
I
RP
max @ T
C
= 25°C
T
J
max
C
c
300
1.29
230
150
V
V
A
°C
G
E
E
C
G
n-channel
G
G ate
C
C ollector
TO-220AB
Full-Pak
E
E m itter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V
CE(on)
and low E
PULSETM
rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
V
GE
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
RP
@ T
C
= 25°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Gate-to-Emitter Voltage
Continuous Collector Current, V
GE
@ 15V
Continuous Collector, V
GE
@ 15V
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Max.
±30
25
12
230
43
17
0.34
-40 to + 150
300
Units
V
A
c
W
W/°C
°C
10lb in (1.1N m)
x
x
N
Thermal Resistance
R
θJC
Junction-to-Case
d
Parameter
Typ.
–––
Max.
2.9
Units
°C/W
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1
02/02/09
IRGI4086PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
∆ΒV
CES
/∆T
J
Breakdown Voltage Temp. Coefficient
BV
CES
Min.
300
–––
–––
–––
–––
–––
–––
–––
2.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
—
—
—
—
—
—
—
—
100
–––
–––
Typ. Max. Units
–––
0.29
1.10
1.29
1.49
1.90
2.57
2.27
–––
-11
2.0
5.0
100
–––
–––
29
65
22
36
31
112
65
30
33
145
98
–––
1075
1432
2250
110
58
5.0
13
Conditions
V
CE(on)
Static Collector-to-Emitter Voltage
V
GE(th)
∆V
GE(th)
/∆T
J
I
CES
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
I
GES
g
fe
Q
g
Q
gc
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
st
E
PULSE
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
Energy per Pulse
C
iss
C
oss
C
rss
L
C
L
E
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Collector Inductance
Internal Emitter Inductance
–––
–––
–––
–––
–––
–––
V V
GE
= 0V, I
CE
= 1 mA
–––
V/°C Reference to 25°C, I
CE
= 1mA
V
GE
= 15V, I
CE
= 12A
1.36
V
GE
= 15V, I
CE
= 25A
1.55
V
GE
= 15V, I
CE
= 40A
1.67
V
V
GE
= 15V, I
CE
= 70A
2.10
V
GE
= 15V, I
CE
= 120A
2.96
V
GE
= 15V, I
CE
= 70A, T
J
= 150°C
–––
5.0
V V
CE
= V
GE
, I
CE
= 500µA
––– mV/°C
25
µA V
CE
= 300V, V
GE
= 0V
V
CE
= 300V, V
GE
= 0V, T
J
= 100°C
–––
V
CE
= 300V, V
GE
= 0V, T
J
= 150°C
–––
100
nA V
GE
= 30V
V
GE
= -30V
-100
–––
S V
CE
= 25V, I
CE
= 25A
–––
nC V
CE
= 200V, I
C
= 25A, V
GE
= 15V
–––
I
C
= 25A, V
CC
= 196V
—
—
ns R
G
= 10Ω, L=200µH, L
S
= 200nH
T
J
= 25°C
—
—
I
C
= 25A, V
CC
= 196V
—
—
ns R
G
= 10Ω, L=200µH, L
S
= 200nH
T
J
= 150°C
—
—
–––
ns V
CC
= 240V, V
GE
= 15V, R
G
= 5.1Ω
L = 220nH, C= 0.40µF, V
GE
= 15V
–––
µJ V
CC
= 240V, R
G
= 5.1Ω, T
J
= 25°C
L = 220nH, C= 0.40µF, V
GE
= 15V
–––
V
CC
= 240V, R
G
= 5.1Ω, T
J
= 100°C
V
GE
= 0V
–––
–––
pF V
CE
= 30V
e
e
e
e
e
e
–––
–––
nH
–––
ƒ = 1.0MHz,
See Fig.13
Between lead,
6mm (0.25in.)
from package
and center of die contact
Notes:
Half sine wave with duty cycle = 0.1, ton=2µsec.
R
θ
is measured at
T
J
of approximately 90°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRGI4086PbF
240
200
160
ICE (A)
240
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
200
160
ICE (A)
120
80
40
0
0
4
8
VCE (V)
VGE = 8.0V
VGE = 6.0V
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
120
80
40
0
VGE = 8.0V
VGE = 6.0V
12
16
0
4
8
VCE (V)
12
16
Fig 1. Typical Output Characteristics @ 25°C
240
200
160
ICE (A)
Fig 2. Typical Output Characteristics @ 75°C
240
200
160
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
120
80
40
0
0
4
8
VCE (V)
VGE = 8.0V
VGE = 6.0V
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
120
80
40
0
VGE = 8.0V
VGE = 6.0V
12
16
0
4
8
VCE (V)
12
16
Fig 3. Typical Output Characteristics @ 125°C
240
200
T J = 25°C
160
T J = 150°C
Fig 4. Typical Output Characteristics @ 150°C
10
IC = 25A
8
120
80
40
0
2
4
6
8
10
12
14
16
VGE (V)
VCE (V)
ICE (A)
6
TJ = 25°C
TJ = 150°C
4
2
0
5
10
V GE (V)
15
20
Fig 5. Typical Transfer Characteristics
Fig 6. V
CE(ON)
vs. Gate Voltage
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IRGI4086PbF
30
25
240
220
200
Repetitive Peak Current (A)
ton= 2µs
Duty cycle <= 0.05
Half Sine Wave
180
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
Case Temperature (°C)
20
IC (A)
15
10
5
0
0
25
50
75
T C (°C)
100
125
150
Fig 7. Maximum Collector Current vs. Case Temperature
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
160
170
180
190
200
210
220
230
25°C
VCC = 240V
L = 220nH
C = variable
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
1600
1400
L = 220nH
C = 0.4µF
100°C
Energy per Pulse (µJ)
Energy per Pulse (µJ)
100°C
1200
1000
800
600
400
200
150 160 170 180 190 200 210 220 230 240
VCE, Collector-to-Emitter Voltage (V)
25°C
IC, Peak Collector Current (A)
Fig 9. Typical E
PULSE
vs. Collector Current
2000
VCC = 240V
1600
Energy per Pulse (µJ)
Fig 10. Typical E
PULSE
vs. Collector-to-Emitter Voltage
1000
L = 220nH
t = 1µs half sine
C= 0.4µF
100
10µsec
1200
100µsec
IC (A)
10
1msec
800
C= 0.3µF
400
1
C= 0.2µF
Tc = 25°C
Tj = 150°C
Single Pulse
0
25
50
75
100
125
150
TJ, Temperature (ºC)
0.1
1
10
VCE (V)
100
1000
Fig 11. E
PULSE
vs. Temperature
Fig 12. Forward Bias Safe Operating Area
4
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IRGI4086PbF
10000
25
ID= 25A
VDS = 240V
VDS = 200V
VDS = 150V
VGE, Gate-to-Source Voltage (V)
Cies
20
Capacitance (pF)
1000
15
10
100
Coes
Cres
10
0
100
200
300
5
0
0
20
40
60
80
100
QG Total Gate Charge (nC)
VCE (V)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
10
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
0.1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
4
Ri (°C/W)
0.12489
0.35135
1.07738
1.34638
τi
(sec)
0.00005
0.001807
0.133584
2.34
τ
1
τ
2
τ
3
τ
4
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT)
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