RF MOSFET Transistors BLF6G10L-200BRN/ACC-6L/REEL13/
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | NXP(恩智浦) |
产品种类 Product Category | RF MOSFET Transistors |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 49 A |
Vds - Drain-Source Breakdown Voltage | 65 V |
技术 Technology | Si |
Gain | 20 dB |
Output Power | 40 W |
最大工作温度 Maximum Operating Temperature | + 150 C |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | SOT-502A |
Configuration | Single |
Operating Frequency | 0.7 GHz to 1 GHz |
类型 Type | RF Power MOSFET |
Vgs - Gate-Source Voltage | +/- 13 V |
Vgs th - Gate-Source Threshold Voltage | 2 V |
BLF6G10L-200BRN,11 | BLF6G10L-200BRN11 | 934063283112 | |
---|---|---|---|
描述 | RF MOSFET Transistors BLF6G10L-200BRN/ACC-6L/REEL13/ | RF MOSFET Transistors BLF6G10L-200BRN/ACC-6L/TUBE-BU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2 |
Product Attribute | Attribute Value | Attribute Value | - |
制造商 Manufacturer |
NXP(恩智浦) | NXP(恩智浦) | - |
产品种类 Product Category |
RF MOSFET Transistors | RF MOSFET Transistors | - |
Transistor Polarity | N-Channel | N-Channel | - |
Id - Continuous Drain Current | 49 A | 49 A | - |
Vds - Drain-Source Breakdown Voltage | 65 V | 65 V | - |
技术 Technology |
Si | Si | - |
Gain | 20 dB | 20 dB | - |
Output Power | 40 W | 40 W | - |
最大工作温度 Maximum Operating Temperature |
+ 150 C | + 150 C | - |
安装风格 Mounting Style |
SMD/SMT | SMD/SMT | - |
封装 / 箱体 Package / Case |
SOT-502A | SOT-502A | - |
Configuration | Single | Single | - |
Operating Frequency | 0.7 GHz to 1 GHz | 0.7 GHz to 1 GHz | - |
类型 Type |
RF Power MOSFET | RF Power MOSFET | - |
Vgs - Gate-Source Voltage | +/- 13 V | +/- 13 V | - |
Vgs th - Gate-Source Threshold Voltage | 2 V | 2 V | - |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved