refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
November, 2014 − Rev. 2
Publication Order Number:
NSS40200UW6/D
NSS40200UW6T1G, NSV40200UW6T1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= −10 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= −0.1 mAdc, I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= −0.1 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= −40 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= −7.0 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
= −10 mA, V
CE
= −2.0 V)
(I
C
= −500 mA, V
CE
= −2.0 V)
(I
C
= −1.0 A, V
CE
= −2.0 V)
(I
C
= −2.0 A, V
CE
= −2.0 V)
Collector −Emitter Saturation Voltage (Note 4)
(I
C
= −0.1 A, I
B
= −0.010 A) (Note 5)
(I
C
= −1.0 A, I
B
= −0.100 A)
(I
C
= −1.0 A, I
B
= −0.010 A)
(I
C
= −2.0 A, I
B
= −0.020 A)
Base −Emitter Saturation Voltage (Note 4)
(I
C
= −1.0 A, I
B
= −0.01 A)
Base −Emitter Turn−on Voltage (Note 4)
(I
C
= −2.0 A, V
CE
= −3.0 V)
Cutoff Frequency
(I
C
= −100 mA, V
CE
= −5.0 V, f = 100 MHz)
Input Capacitance (V
EB
= −0.5 V, f = 1.0 MHz)
Output Capacitance (V
CB
= −3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Delay (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA)
Rise (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA)
Storage (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA)
Fall (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA)
t
d
t
r
t
s
t
f
−
−
−
−
−
−
−
−
70
150
525
155
ns
ns
ns
ns
h
FE
150
150
150
150
V
CE(sat)
−
−
−
−
V
BE(sat)
−
V
BE(on)
−
f
T
140
Cibo
Cobo
−
−
−
−
500
100
pF
pF
−0.80
−0.900
MHz
−0.76
−0.900
V
−
−0.100
−
−
−0.020
−0.120
−0.200
−0.300
V
−
−
−
−
−
−
−
−
V
V
(BR)CEO
−40
V
(BR)CBO
−40
V
(BR)EBO
−7.0
I
CBO
−
I
EBO
−
−
−0.1
−
−0.1
mAdc
−
−
mAdc
−
−
Vdc
−
−
Vdc
Vdc
Symbol
Min
Typical
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300
msec,
Duty Cycle
≤
2%.
5. Guaranteed by design but not tested.
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2
NSS40200UW6T1G, NSV40200UW6T1G
TYPICAL CHARACTERISTICS
0.15
V
CE(sat)
, COLLECTOR EMITTER
SATURATION VOLTAGE (V)
V
CE(sat)
= 150°C
V
CE(sat)
, COLLECTOR EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
0.30
I
C
/I
B
= 100
0.25
0.20
0.15
0.10
0.05
0
0.001
150°C
25°C
V
CE(sat)
= −55°C
0.10
25°C
0.05
−55°C
0
0.001
0.01
0.1
1.0
10
0.01
0.1
1.0
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
700
150°C (5 V)
V
BE(sat)
, BASE EMITTER
SATURATION VOLTAGE (V)
h
FE
, DC CURRENT GAIN
600
150°C (2 V)
500
400
300
200
−55°C (2 V)
100
0.001
0.01
0.1
1
10
25°C (5 V)
25°C (2 V)
−55°C (5 V)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.001
0.01
0.1
1.0
10
150°C
25°C
I
C
/I
B
= 10
−55°C
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs.
Collector Current
V
BE(on)
, BASE EMITTER TURN−ON VOLTAGE (V)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.001
0.01
0.1
1.0
10
150°C
V
CE
= −1.0 V
−55°C
25°C
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
1.0
10 mA
100 mA
I
C
= 500 mA
0.8
0.6
0.4
300 mA
0.2
0
0.01
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (A)
I
B
, BASE CURRENT (mA)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
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3
Figure 6. Saturation Region
NSS40200UW6T1G, NSV40200UW6T1G
TYPICAL CHARACTERISTICS
475
C
obo
, OUTPUT CAPACITANCE (pF)
C
ibo
, INPUT CAPACITANCE (pF)
C
ibo
(pF)
425
375
325
275
225
175
0
1.0
2.0
3.0
4.0
5.0
6.0
V
EB
, EMITTER BASE VOLTAGE (V)
140
130
120
110
100
90
80
70
60
50
40
30
0
5.0
10
15
20
25
30
35
V
CB
, COLLECTOR BASE VOLTAGE (V)
C
obo
(pF)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
10
1.0 S 100 mS
1.0 mS
1
I
C
(A)
0.1
10 mS
0.01
0.01
Thermal
Limit
0.1
1
V
CE
(V
dc
)
10
100
Figure 9. PNP Safe Operating Area
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4
NSS40200UW6T1G, NSV40200UW6T1G
PACKAGE DIMENSIONS
WDFN6 2x2
CASE 506AP
ISSUE B
D
A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND
IS MEASURED BETWEEN 0.15 AND 0.20mm FROM
TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS
WELL AS THE TERMINALS.
5. CENTER TERMINAL LEAD IS OPTIONAL. TERMINAL
LEAD IS CONNECTED TO TERMINAL LEAD # 4.
6. PINS 1, 2, 5 AND 6 ARE TIED TO THE FLAG.
DIM
A
A1
A3
b
b1
D
D2
E
E2
e
K
L
L2
J
J1
MILLIMETERS
MIN
MAX
0.70
0.80
0.00
0.05
0.20 REF
0.25
0.35
0.51
0.61
2.00 BSC
1.00
1.20
2.00 BSC
1.10
1.30
0.65 BSC
0.15 REF
0.20
0.30
0.20
0.30
0.27 REF
0.65 REF
PIN ONE
REFERENCE
E
2X
0.10 C
2X
0.10 C
0.10 C
7X
0.08 C
D2
6X
L
1
3
E2
NOTE 5
K
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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ÍÍÍ
ÍÍÍ
A3
A1
4X
A
C
e
L2
SEATING
PLANE
SOLDERING FOOTPRINT*
2.30
1.10
6X
6X
b1
6X
0.43
B
1.25
1
0.35
0.10 C A
0.05 C
6
4
0.60
0.35
b
6X
J
J1
BOTTOM VIEW
0.10 C A
0.05 C
B
0.34
0.66
DIMENSIONS: MILLIMETERS
NOTE 3
0.65
PITCH
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
测试/测量
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