VS-SD1100C..C Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes
(Hockey PUK Version), 1400 A
FEATURES
• Wide current range
• High voltage ratings up to 3200 V
• High surge current capabilities
• Diffused junction
• Hockey PUK version
• Case style B-43
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
B-43
TYPICAL APPLICATIONS
• Converters
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
1400 A
B-43
Single
• Power supplies
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
TEST CONDITIONS
SD1100C..C
04 to 20
1400
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
Range
55
2500
25
13 000
13 600
846
772
400 to 2000
-40 to +180
25 to 32
1100
55
2000
25
10 500
11 000
551
503
2500 to 3200
-40 to +150
UNITS
A
°C
A
°C
A
kA
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
12
16
VS-SD1100C..C
20
22
25
30
32
V
RRM
, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
400
800
1200
1600
2000
2200
2500
3000
3200
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
500
900
1300
1700
2100
2300
2600
3100
3300
35
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 11-Jan-18
Document Number: 93535
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD1100C..C Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive current
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
SD1100C..C
04
to
20
55 (85)
2500
13 000
13 600
10 930
Sinusoidal half wave,
initial T
J
= T
J
maximum
11 450
846
772
598
546
8460
0.78
0.94
0.35
0.26
1.31
25 to 32
55 (85)
2000
10 500
11 000
8830
9250
551
503
390
356
5510
0.84
0.88
0.40
m
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 1500 A, T
J
= T
J
maximum
t
p
= 10 ms sinusoidal wave
0.38
1.44
V
kA
2
s
V
kA
2
s
A
1400 (795)
1100 (550)
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJ-hs
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
SD1100C..C
04 to 20
25 to 32
UNITS
-40 to +180 -40 to +150
-55 to +200
0.076
0.038
9800 (1000)
83
B-43
°C
K/W
N (kg)
g
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.007
0.008
0.010
0.015
0.026
DOUBLE SIDE
0.007
0.008
0.010
0.015
0.026
RECTANGULAR CONDUCTION
SINGLE SIDE
0.005
0.008
0.011
0.016
0.026
DOUBLE SIDE
0.005
0.008
0.011
0.016
0.026
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93535
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD1100C..C Series
www.vishay.com
Vishay Semiconductors
180
M a xim u m A llo w a b le H e a t sin k Te m p e ra t u re (°C )
160
140
120
100
30 °
80
60
40
20
DC
0
0
500
10 0 0
1500
2 0 00
2 5 00
3 0 00
A v e ra g e F o rw a r d C u rre n t (A )
60 °
90°
1 2 0°
1 8 0°
Co nd uc tio n Pe rio d
180
Maxim um Allowable Heatsink Temperature (°C)
160
140
120
100
30°
80
60
40
0
200
400
600
800
1000
Average Forward Curren t (A)
60°
90°
120°
180°
C o ndu ct io n A ng le
SD 1100C..C Series (400V to 2000V )
(Single Side Cooled)
R
th J- hs
(DC) = 0.076 K/W
S D 1 1 0 0 C ..C S e rie s (4 0 0 V t o 2 0 0 0 V )
(D o ub le Sid e C o o le d )
R
th J- hs
(D C ) = 0 .0 3 8 K/ W
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
180
M a x im u m A llo w a b le H e a tsin k Te m p e ra t u re (°C )
160
140
120
Maxim um Allowable Heatsin k Tem perature (°C)
S D 1 1 0 0 C ..C S e rie s (4 0 0 V t o 2 0 0 0 V )
(S in gle Sid e C o o le d )
R
thJ-hs
(D C ) = 0 .0 7 6 K /W
150
140
130
120
110
100
90
80
70
60
50
40
0
200
400
600
800
Average Forward Current ( A)
30°
60°
90°
C o nd uct io n An g le
SD 1100C..C Series (2500V to 3200V )
(Single Side Cooled)
R
thJ- hs
(DC) = 0.076 K/W
Co nd uc tio n Pe rio d
100
80
60
9 0°
40
30 °
20
0
400
80 0
12 0 0
1 6 00
A v e ra g e Fo rw a rd C u rre n t (A )
6 0°
1 2 0°
1 8 0°
DC
120°
180°
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics
180
160
140
120
Co nd uc tio n A ng le
Maxim um Allowable Heatsink Tem perature ( °C)
M a xim u m A llo w a b le H e a tsin k T e m p e ra tu re (° C )
S D 1 1 0 0 C ..C Se rie s (4 0 0 V t o 2 0 0 0 V )
(D o u b le S id e C o o le d )
R
th J-hs
(D C ) = 0 .0 3 8 K /W
100
30 °
80
60
40
20
0
4 00
80 0
12 0 0
1 6 00
2 0 00
A v e ra g e F o rw a rd C u rr e n t (A )
60°
90°
120 °
180 °
150
140
130
120
110
100
90
80
70
60
50
40
30
20
0
SD1100C..C Series (2500V to 3200V)
(Single Side Cooled)
R
th J-hs
(DC) = 0.076 K/W
C o ndu ct io n Pe rio d
90°
60°
30°
200
400
600
120°
180°
DC
800 1000 1200 1400
Average Forward Curren t (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Current Ratings Characteristics
Revision: 11-Jan-18
Document Number: 93535
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD1100C..C Series
www.vishay.com
Vishay Semiconductors
4500
Maxim um Average Forward Power Loss (W )
Maximum Allowable Heatsink Tem perature (°C)
150
140
130
120
110
100
90
80
70
60
50
40
30
20
0
SD 1100C..C Series (2500V to 3200V)
(Double Side Cooled )
R
thJ-h s
(D C) = 0.038 K/W
4000
3500
3000
2500
2000
1500
1000
500
0
0
C o nd uct io n A ng le
DC
180°
120°
90°
60°
30°
RM S Lim it
C o ndu c tio n Pe rio d
30°
60°
90°
120°
180°
SD1100C..C Series
(400V to 2000V )
T
J
= 180°C
500
1000
1500
2000
2500
3000
200
400
600
800 1000 1200 1400
Average Forw ard Curren t (A)
Average Forward Current (A)
Fig. 7 - Current Ratings Characteristics
Fig. 10 - Forward Power Loss Characteristics
Maxim um Allowable Heatsink Temperature (°C)
Maximum A verage Forward Power Loss (W )
150
140
130
120
110
100
90
80
70
60
50
40
30
20
0
3000
SD1100C..C Series (2500V to 3200V)
(Double Side Cooled)
R
thJ-h s
(D C) = 0.038 K/W
2500
2000
1500
1000
500
0
0
200
400
600
800 1000 1200 1400
Average Forw ard Current (A)
C o nd uc tio n Ang le
180°
120°
90°
60°
30°
RM S Limit
C o nduc tion Pe rio d
30°
60°
90°
120°
180°
DC
400
800
1200 1600
2000 2400
SD1100C..C Series
(2500V to 3200V)
T
J
= 150°C
Avera ge Forward Curren t (A)
Fig. 8 - Current Ratings Characteristics
Fig. 11 - Forward Power Loss Characteristics
3500
Maxim um Average Forward Power Loss (W )
3000
2500
2000
1500
1000
500
0
0
400
800
1200
1600
Average Forward Curren t (A)
C o nd uct io n A ng le
3500
180°
120°
90°
60°
30°
RMS Limit
Maxim um Average Forw ard Power Loss (W )
3000
2500
2000
1500
C o ndu ctio n Pe rio d
DC
180°
120°
90°
60°
30°
RMS Lim it
1000
500
0
0
400
800
1200
1600
2000
2400
Average Forward Current (A)
SD1100C..C Series
(2500V to 3200V )
T
J
= 150°C
SD 1100C..C Series
(400V to 2000V)
T
J
= 180°C
Fig. 9 - Forward Power Loss Characteristics
Fig. 12 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93535
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD1100C..C Series
www.vishay.com
Vishay Semiconductors
11000
Peak Half Sine W ave Forward Curren t (A)
10000
9000
8000
7000
6000
5000
4000
3000
0.01
SD 1100C..C Series
(2500V to 3200V)
0.1
Pulse Train Duration (s)
1
M aximum Non Repet itive Surge Current
Versus Pulse Train Duration.
Initial T
J
= 150 °C
No V oltage Reapplied
Rated V
R RM
Reapplied
1 2 00 0
P e a k H a lf S in e W a v e Fo rw a rd C u rre n t (A )
1 1 00 0
1 0 00 0
9 0 00
8 0 00
7 0 00
6 0 00
5 0 00
4 0 00
3 0 00
1
A t A n y R a t e d Lo a d C o n d it io n A n d W it h
R a t e d V
RRM
A p p lie d Fo llo w in g S urg e .
In it ia l T
J
= 1 8 0 °C
@ 6 0 H z 0 .0 0 8 3 s
@ 5 0 H z 0 .0 1 0 0 s
SD 1 1 0 0 C ..C S e rie s
(4 0 0 V t o 2 0 0 0 V )
10
10 0
N um b er O f E qua l A m plitud e H alf C y cle Cu rre nt Pulse s (N )
Fig. 13 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 16 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
14000
Pea k Half Sine Wave Forward Current (A)
13000
12000
11000
10000
9000
8000
7000
6000
5000
4000
Instan tan eous Forw ard Curren t (A)
Maxim um Non Repetitive Surge Current
V ersus Pulse Train Duration .
In itial T
J
= 180 °C
No Voltage Reapplied
Rated V
RRM
Reapplied
10000
T
J
= 25°C
T
J
= 180°C
1000
SD1100C..C Series
(400V to 2000V )
0.1
Pulse Train Dura tion (s)
1
SD1100C..C Series
(400V to 2000V )
100
0.5
3000
0.01
1
1.5
2
2.5
3
3.5
4
Instan ta neous Forward V oltage (V)
Fig. 14 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 17 - Forward Voltage Drop Characteristics
10000
Peak Half Sine W ave Forward Curren t (A)
9000
8000
7000
6000
5000
4000
3000
1
In stantaneous Forw ard Current (A)
At An y Rated Load Con dition And W ith
Rated V
R RM
Applied Following Surge.
Initial T
J
= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
10000
T
J
= 25°C
T
J
= 150°C
1000
SD 1100C..C Series
(2500V to 3200V)
10
10 0
SD 1100C..C Series
(2500V to 3200V )
100
0.5
1
1.5
2
2. 5
3
3.5
4
4.5
5
N um b e r O f Equ al A m plitud e Half Cy c le C urre nt P ulse s (N )
In stantan eous Forward Voltage (V)
Fig. 15 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 18 - Forward Voltage Drop Characteristics
Revision: 11-Jan-18
Document Number: 93535
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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