BUL804
High voltage fast-switching NPN Power Transistor
General features
■
■
■
■
■
■
NPN Transistor
High voltage capability
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
In compliance with the 2002/93/EC European
Directive
Description
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
od
o
schematic diagram
r
s
Internal
P
b
O
te
le
)-
(s
so
b
ct
u
d
-O
Applications
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
Order codes
so
b
O
The device is designed for use as PFC in high
frequency ballast half Bridge voltage fed topology.
■
■
t
le
P
e
TO-220
ro
uc
d
1
2
3
s)
t(
s)
t(
uc
Electronic ballast for fluorescent lighting
Dedicated for PFC solution in half-bridge
voltage fed topology.
Part Number
BUL804
Marking
BUL804
Package
TO-220
Packing
Tube
May 2006
Rev 2
1/10
www.st.com
10
BUL804
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
b
O
so
te
le
ro
P
uc
d
s)
t(
P
e
od
r
s)
t(
uc
2/10
BUL804
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
J
Absolute maximum rating
Parameter
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5ms)
Base current
Base peak current (t
P
< 5ms)
Total dissipation at T
c
= 25°C
Storage temperature
Max. operating junction temperature
Value
800
450
8
4
8
2
Unit
V
V
V
Table 2.
Symbol
R
thj-case
R
thj-amb
Thermal data
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Parameter
Thermal resistance junction-case
Thermal resistance junction-amb
b
O
so
te
le
__max
__max
r
P
d
o
4
uc
s)
t(
A
A
A
A
70
-65 to 150
150
P
e
od
r
s)
t(
uc
W
°C
°C
Value
1.78
62.5
Unit
°C/W
°C/W
3/10
Electrical characteristics
BUL804
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 3.
Symbol
I
CES
I
CEO
V
EBO
Electrical characteristics
Parameter
Collector cut-off current
(V
BE
=-1.5V)
Collector cut-off current
(I
B
=0)
Emitter-base voltage
(I
C
= 0)
Test Conditions
V
CE
=800V
V
CE
=800V
V
CE
=450V
I
E
=10mA
8
Min.
Typ.
Max.
100
500
250
Unit
µA
µA
µA
V
T
j
=125°C
Collector-emitter
V
CEO(sus) (1)
sustaining voltage
(I
B
= 0)
V
CE(sat) (1)
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Resistive load
Storage time
Fall time
Inductive load
Storage time
Fall time
I
C
=100mA
I
C
=1A
I
C
=2.5A
I
C
=1A
I
C
=2.5A
L =25mH
I
B
=0.2A
V
BE(sat) (1)
h
FE
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
I
C
=10mA
I
C
=2A
V
CC
=300V
I
C
=2A
t
s
t
f
I
B1
= -I
B2
=0.4A
t
p
= 30µs
I
C
=2A
(see fig.8 )
t
s
t
f
V
BE(off)
=-5V
Note (1) Pulsed duration = 300µs, duty cycle
≤1.5%
b
O
so
I
B
=0.5A
I
B
=0.2A
I
B
=0.5A
te
le
ro
P
450
10
10
uc
d
s)
t(
V
CE
=5V
V
CE
=5V
P
e
od
r
ct
u
0.8
1.2
1.2
1.3
s)
(
V
V
V
V
V
20
1.8
0.1
2.6
0.25
µs
µs
I
B1
=0.4A
R
BB
=0
Ω
0.6
0.1
1
0.2
µs
µs
V
clamp
=360V (see fig.9)
4/10
BUL804
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1.
DC current gain
Figure 2.
DC current gain
Figure 3.
Collector-emitter saturation
voltage
Figure 4.
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Figure 5.
Inductive load switching time Figure 6.
b
O
so
te
le
Base-emitter saturation
voltage
ro
P
uc
d
s)
t(
P
e
od
r
s)
t(
uc
Resistive load switching time
5/10
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