Freescale Semiconductor
Technical Data
Document Number: MRF8S21172H
Rev. 1, 3/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1350 mA, P
out
= 42 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
17.3
17.4
17.5
η
D
(%)
31.6
31.0
30.6
Output PAR
(dB)
5.9
6.0
5.9
ACPR
(dBc)
--35.8
--35.9
--35.0
MRF8S21172HR3
MRF8S21172HSR3
2110-
-2170 MHz, 42 W AVG., 28 V
W-
-CDMA, LTE
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 193 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 1 dB Compression Point
≃
132 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
•
Designed for Digital Predistortion Error Correction Systems
•
Optimized for Doherty Applications
•
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 13.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
CASE 465-
-06, STYLE 1
NI-
-780
MRF8S21172HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF8S21172HSR3
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
196
0.98
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 71°C, 42 W CW, 28 Vdc, I
DQ
= 1350 mA, 2170 MHz
Case Temperature 84°C, 160 W CW
(4)
, 28 Vdc, I
DQ
= 1350 mA, 2170 MHz
Symbol
R
θJC
Value
(2,3)
0.41
0.41
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
©
Freescale Semiconductor, Inc., 2011--2012. All rights reserved.
MRF8S21172HR3 MRF8S21172HSR3
1
RF Device Data
Freescale Semiconductor, Inc.
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
A
IV
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 258
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1350 mAdc)
Fixture Gate Quiescent Voltage
(1)
(V
DD
= 28 Vdc, I
D
= 1350 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 2.5 Adc)
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
4.5
0.1
2.0
2.7
5.4
0.24
2.7
—
6.0
0.3
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(2)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1350 mA, P
out
= 42 W Avg., f = 2170 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
16.5
29.2
5.6
—
—
17.5
30.6
5.9
--35.0
--13
19.5
—
—
--33.2
--8
dB
%
dB
dBc
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1350 mA, P
out
= 42 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
17.3
17.4
17.5
η
D
(%)
31.6
31.0
30.6
Output PAR
(dB)
5.9
6.0
5.9
ACPR
(dBc)
--35.8
--35.9
--35.0
IRL
(dB)
--14
--14
--13
1. V
GG
= 2 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF8S21172HR3 MRF8S21172HSR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 104 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 42 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
Symbol
P1dB
IMD
sym
Min
—
—
Typ
132
20
Max
—
—
Unit
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1350 mA, 2110--2170 MHz Bandwidth
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
58
0.25
0.017
0.003
—
—
—
—
MHz
dB
dB/°C
dB/°C
MRF8S21172HR3 MRF8S21172HSR3
RF Device Data
Freescale Semiconductor, Inc.
3
R1
C9
R2
C8
C4 C5
R3
C28 C2
C31
C3
C1
C30
C29
C32
C10 C11
C16
C20
C24
C12
C21
C26
C27
C13
R4
C18
C22
C19
MRF8S21172
Rev. 0
C6
C7
C14 C15
C17
C23
C25
Figure 1. MRF8S21172HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S21172HR3(HSR3) Test Circuit Component Designations and Values
Part
C1, C5, C7, C11, C15, C16,
C17, C26, C27
C2
C3
C4, C6, C10, C12, C13, C14
C8, C9, C20, C21, C22, C23
C18, C19
C24, C25
C28, C29
C30
C31, C32
R1, R2
R3, R4
PCB
Description
68 pF Chip Capacitors
1.3 pF Chip Capacitor
1.5 pF Chip Capacitor
0.8 pF Chip Capacitors
10
μF,
50 V Chip Capacitors
1.1 pF Chip Capacitors
330
μF,
63 V Electrolytic Capacitors
0.9 pF Chip Capacitors
0.6 pF Chip Capacitor
0.5 pF Chip Capacitors
2 kΩ, 1/4 W Chip Resistors
2.37
Ω,
1/4 W Chip Resistors
0.030″,
ε
r
= 3.55
Part Number
ATC800B680JT500XT
ATC800B1R3BT500XT
ATC800B1R5BT500XT
ATC800B0R8BT500XT
GRM55DR61H106KA88L
ATC800B1R1BT500XT
MCRH63V337M13X21--RH
ATC800B0R9BT500XT
ATC800B0R6BT500XT
ATC800B0R5BT500XT
CRCW12062K00FKEA
CRCW12062R37FNEA
RF--35A2
ATC
ATC
ATC
ATC
Murata
ATC
Multicomp
ATC
ATC
ATC
Vishay
Vishay
Taconic
Manufacturer
MRF8S21172HR3 MRF8S21172HSR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
18
17.9
17.8
G
ps
, POWER GAIN (dB)
17.7
17.6
17.5
17.4
17.3
17.2
17.1 ACPR
17
2060
2080
2100
35
V
DD
= 28 Vdc, P
out
= 42 W (Avg.), I
DQ
= 1350 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 34
33
η
D
32
G
ps
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
PARC
IRL
31
--31
--32
ACPR (dBc)
--33
--34
--35
2140
2160
2180
2200
--36
2220
IRL, INPUT RETURN LOSS (dB)
--10
--11
--12
--13
--14
--15
--1.4
--1.6
--1.8
--2
--2.2
--2.4
PARC (dB)
2120
f, FREQUENCY (MHz)
Figure 2. Output Peak- -Average Ratio Compression (PARC)
-to-
Broadband Performance @ P
out
= 42 Watts Avg.
--10
--20
--30
--40
--50
--60
IM7--L
IM7--U
1
10
TWO--TONE SPACING (MHz)
100
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, P
out
= 104 W (PEP), I
DQ
= 1350 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3--U
IM3--L
IM5--U
IM5--L
Figure 3. Intermodulation Distortion Products
versus Two-
-Tone Spacing
18.5
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
18
G
ps
, POWER GAIN (dB)
17.5
17
16.5
16
15.5
1
0
--1
--2
--3
--4
--5
--1 dB = 35 W
--2 dB = 49 W
PARC
--3 dB = 65 W
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
20
20
30
40
50
60
70
P
out
, OUTPUT POWER (WATTS)
44
η
D
,
DRAIN EFFICIENCY (%)
40
ACPR
η
D
36
32
28
24
--20
--25
--30
--35
--40
--45
--50
ACPR (dBc)
V
DD
= 28 Vdc, I
DQ
= 1350 mA, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
G
ps
Figure 4. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF8S21172HR3 MRF8S21172HSR3
RF Device Data
Freescale Semiconductor, Inc.
5
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