Power Module
1200V 75A IGBT Module
MG1275H-XN2MM
Features
• High level of integration
• IGBT
3
CHIP(Trench+Field
Stop technology)
• Low saturation voltage
and positive temperature
coefficient
• Fast switching and short
tail current
• Free wheeling diodes
with fast and soft reverse
recovery
• Solderable pins for PCB
mounting
• Temperature sense
included
RoHS
Applications
• AC motor control
• Motion/servo control
• Inverter and power
supplies
Module Characteristics
(T
J
= 25°C, unless otherwise specified)
Symbol
T
J max
T
J op
T
stg
V
isol
CTI
M
d
Weight
Parameters
Max. Junction Temperature
Operating Temperature
Storage Temperature
Insulation Test Voltage
Comparative Tracking Index
Mounting Torque
Recommended (M5)
AC, t=1min
250
2.5
180
5
N·m
g
-40
-40
3000
Test Conditions
Min
Typ
Max
150
125
125
Unit
°C
°C
°C
V
Absolute Maximum Ratings
(T
J
= 25°C, unless otherwise specified)
Symbol
IGBT
V
CES
V
GES
I
C
I
CM
P
tot
Diode
V
RRM
I
F(AV)
I
FRM
I
2
t
Repetitive Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
T
J
=25°C
T
C
=25°C
T
C
=80°C
t
p
=1ms
T
J
=125°C, t=10ms, V
R
=0V
1200
105
75
150
1150
V
A
A
A
A
2
s
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
Repetitive Peak Collector Current
Power Dissipation Per IGBT
T
C
=25°C
T
C
=80°C
t
p
=1ms
T
J
=25°C
1200
±20
105
75
150
348
V
V
A
A
A
W
Parameters
Test Conditions
Values
Unit
MG1275H-XN2MM
1
193
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
Power Module
1200V 75A IGBT Module
Electrical and Thermal Specifications
(T
J
= 25°C, unless otherwise specified)
Symbol
IGBT
V
GE(th)
V
CE(sat)
I
ICES
I
GES
R
Gint
Q
ge
C
ies
C
res
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
I
SC
R
thJC
Diode
V
F
t
RR
I
RRM
E
rec
R
thJCD
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Energy
I
F
=75A, V
GE
=0V, T
J
=25°C
I
F
=75A, V
GE
=0V, T
J
=125°C
I
F
=75A, V
R
=600V
di
F
/dt=-1200A/µs
T
J
=125°C
1.65
1.65
300
85
6.5
0.6
V
V
ns
A
mJ
K/W
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn - on Delay Time
Rise Time
V
CC
=600V
Turn - off Delay Time
Fall Time
Turn - on Energy
Turn - off Energy
Short Circuit Current
I
C
=75A
R
G
=4.7Ω
V
GE
=±15V
Inductive Load
V
CE
=600V, I
C
=75A , V
GE
=±15V
V
CE
=25V, V
GE
=0V, f =1MHz
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
t
psc
≤10μS , V
GE
=15V; T
J
=125°C , V
CC
=900V
V
CE
=V
GE
, I
C
=3mA
I
C
=75A, V
GE
=15V, T
J
=25°C
I
C
=75A, V
GE
=15V, T
J
=125°C
V
CE
=1200V, V
GE
=0V, T
J
=25°C
V
CE
=1200V, V
GE
=0V, T
J
=125°C
V
CE
=0V, V
GE
=±15V, T
J
=125°C
-400
10
0.7
5.3
0.2
260
290
30
50
420
520
70
90
6.6
9.4
6.8
8.0
300
0.36
5.0
5.8
1.7
1.9
1
10
400
6.5
V
V
V
mA
mA
nA
Ω
μC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
K/W
Parameters
Test Conditions
Min
Typ
Max
Unit
Junction-to-Case Thermal Resistance (Per IGBT)
Junction-to-Case Thermal Resistance (Per Diode)
NTC Characteristics
(T
J
= 25°C, unless otherwise specified)
Symbol
R
25
B
25/50
Parameters
Resistance
Test Conditions
T
c
=25°C
Min
Typ
5
3375
Max
Unit
KΩ
K
MG1275H-XN2MM
2
194
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
Power Module
1200V 75A IGBT Module
Figure 1: Typical Output Characteristics
for IGBT Inverter
150
V
GE
=15V
Figure 2: Typical Output Characteristics
for IGBT Inverter
150
120
120
90
60
30
0
0
T
j
=25°C
V
GE
=19V
V
GE
=17V
V
GE
=15V
V
GE
=13V
V
GE
=11V
V
GE
= 9V
I
C
(A)
I
C
(A)
90
60
30
0
T
J
=125°C
T
j
=125°C
0.5
1.0
1.5 2.0
V
CE
V
2.5
3.0
3.5
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
CE
V
Figure 3: Typical Transfer Characteristics
for IGBT Inverter
150
V
CE
=20V
Figure 4: Switching Energy vs. Gate Resistor
for IGBT Inverter
25
20
120
V
CE
=600V
I
C
=75A
V
GE
=±15V
T
j
=125°C
E
on
E
on
E
off
(mJ)
I
C
(A)
90
60
30
0
T
j
=25°C
15
10
5
0
E
off
T
j
=125°C
5
6
7
8
V
GE
9
V
10
11
12
0
10
20
R
G
30
Ω
40
50
Figure 5: Switching Energy vs. Collector Current
for IGBT Inverter
30
25
20
V
CE
=600V
R
G
=4.7
Ω
V
GE
=±15V
T
j
=125°C
Figure 6: Reverse Biased Safe Operating Area
for IGBT Inverter
150
120
90
60
30
0
R
G
=4.7Ω
V
GE
=±15V
T
j
=125°C
E
on
E
off
(mJ)
E
on
E
off
10
5
0
0
30
60
I
C
90
A
I
C
(A)
15
120
150
0
200
400
600 800 1000 1200 1400
V
CE
V
MG1275H-XN2MM
195
3
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
Power Module
1200V 75A IGBT Module
Figure 7: Diode Forward Characteristics
for Diode Inverter
150
120
Figure 8: Switching Energy vs. Gate Resistort
for Diode Inverter
10.0
8.0
I
F
=75
A
V
CE
=600V
T
j
=125°C
E
rec
(mJ)
T
j
=125°C
T
j
=25°C
90
I
F
(A)
6.0
4.0
60
30
0
2.0
0
0
0.5
1.0
1.5
V
F
V
2.0
2.5
0
10
20
R
G
30
Ω
40
50
Figure 9: Switching Energy vs. Forward Current
Diode-inverter
10.0
8.0
6.0
4.0
2.0
0
0
R
G
=4.7Ω
V
CE
=600V
T
j
=125°C
Figure 10: Transient Thermal Impedance of
Diode and IGBT-inverter
1
Diode
IGBT
0.1
E
rec
(mJ)
Z
thJC
(K/W)
20
40
I
F
(A)
60
80
100
0.01
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
Figure 11: NTC Characteristics
100000
10000
R
1000
100
0
MG1275H-XN2MM
20
40
80 100 120 140 160
60
T
C
°C
4
196
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
Power Module
1200V 75A IGBT Module
Circuit Diagram
Dimensions-Package H
The foot pins are in gold / nickel coating
Packing Options
Part Number
MG1275H-XN2MM
Marking
MG1275H-XN2MM
Weight
180g
Packing Mode
Bulk Pack
M.O.Q
40
Part Numbering System
Part Marking System
MG12 75 H - X N2 MM
PRODUCT TYPE
M: Power Module
MODULE TYPE
G: IGBT
VOLTAGE RATING
12: 1200V
CURRENT RATING
75: 75A
ASSEMBLY SITE
WAFER TYPE
CIRCUIT TYPE
PACKAGE TYPE
MG1275H-XN2MM
LOT NUMBER
Space
reserved
for QR
code
MG1275H-XN2MM
5
197
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
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