Preliminary Technical Information
Polar
TM
P & N-Channel
Power MOSFET
Common Drain Topology
FMP26-02P
V
DSS
3
4
5
P CH.
- 200V
- 17A
170mΩ
Ω
240ns
N CH.
200V
26A
60mΩ
Ω
150ns
T1
I
D25
R
DS(on)
(Electrically Isolated Tab)
4
3
T2
1
1
2
2
t
rr(typ)
Symbol
T
J
T
JM
T
stg
V
ISOLD
T
L
T
SOLD
F
C
Test Conditions
Maximum Ratings
-55 ... +150
150
-55 ... +150
°C
°C
°C
~V
°C
°C
N/lb.
ISOPLUS i4-Pak
TM
50/60H
Z
, RMS, t = 1min, Leads-to-Tab
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
2500
300
260
20..120 / 4.5..27
1
Isolated
Tab
5
Symbol
C
P
d
S
, d
A
d
S
, d
A
Weight
Test Conditions
Coupling Capacitance Between Shorted
Pins and Mounting Tab in the Case
Pin - Pin
Pin - Backside Metal
1.7
5.5
9
Characteristic Values
Min.
Typ.
Max.
40
pF
mm
mm
g
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
- UL Recognized Package
- Isolated Mounting Surface
- 2500V~ Electrical Isolation
Avalanche Rated
Low Q
G
Low Drain-to-Tab Capacitance
Low Package Inductance
Advantages
P - CHANNEL
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
- 200
- 200
±
20
±
30
-17
- 70
- 26
1.5
125
V
V
V
V
A
A
A
J
W
Low Gate Drive Requirement
High Power Density
Low Drain to Ground Capacitance
Fast Switching
Applications
DC and AC Motor Drives
Class AB Audio Amplifiers
Multi-Phase DC to DC Converters
Industrial Battery Chargers
Switching Power Supplies
© 2011 IXYS CORPORATION, All Rights Reserved
DS100033A(04/11)
FMP26-02P
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
0.15
V
GS
= -10V, V
DS
= 0.5
V
DSS
, I
D
= -13A
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 V
DSS
, I
D
= -13A
R
G
= 3.3Ω (External)
V
GS
= 0V, V
DS
= - 25 V, f = 1 MHz
V
GS
= 0V, I
D
= - 250μA
V
DS
= V
GS
, I
D
= - 250μA
V
GS
=
±20
V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
GS
= -10V, I
D
= -13A, Note 1
V
DS
= -10V, I
D
= -13A, Note 1
10
17
2740
540
100
18
33
46
21
56
18
20
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
- 200
- 2.5
- 4.5
±
100
V
V
nA
ISOPLUS i4-Pak
TM
Outline
-10
μA
- 150
μA
170 mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.0
°C/W
°C/W
Ref: IXYS CO 0077 R0
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= -13A, V
GS
= 0V, Note 1
I
F
= -13A, di/dt = 100A/μs
V
R
= -100V, V
GS
= 0V
240
2.2
-18
Characteristic Values
Min.
Typ.
Max.
-17
-104
- 3.2
A
A
V
ns
μC
A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
FMP26-02P
N - CHANNEL
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
200
200
±
20
±
30
26
120
50
1
125
V
V
V
V
A
A
A
J
W
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
V
GS
= 10V, V
DS
= 0.5
V
DSS
, I
D
= 25A
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 V
DSS
, I
D
= 25A
R
G
= 10Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1 MHz
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 250μA
V
GS
=
±20
V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
GS
= 10V, I
D
= 25A, (Note 1)
V
DS
= 10V, I
D
= 25A, (Note 1)
T
J
= 150°C
Characteristic Values
Min.
Typ.
Max.
200
2.5
5.0
±
100
V
V
nA
25
μA
250
μA
60 mΩ
12
23
2720
490
105
26
35
70
30
70
17
37
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.0
°C/W
0.15
°C/W
© 2011 IXYS CORPORATION, All Rights Reserved
FMP26-02P
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 50A, V
GS
= 0V, Note 1
I
F
= 25A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
150
2.0
Characteristic Values
Min.
Typ.
Max.
26
120
1.5
A
A
V
ns
μC
Note 1: Pulse test, t
≤
300μs, duty cycle, d
≤
2 %.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
stm32/stm8
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