ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
August 2005
ISL9V5045S3S / ISL9V5045S3
EcoSPARK
TM
N-Channel Ignition IGBT
500mJ, 450V
Features
SCIS Energy = 500mJ at T
J
= 25
o
C
Logic Level Gate Drive
General Description
The ISL9V5045S3S and ISL9V5045S3 are next generation
ignition IGBTs that offer outstanding SCIS capability in the
industry standard D²-Pak (TO-263) plastic package. This
device is intended for use in automotive ignition circuits,
specifically as a coil drivers. Internal diodes provide voltage
clamping without the need for external components.
EcoSPARK™
devices can be custom made to specific
clamp voltages. Contact your nearest Fairchild sales office
for more information.
Applications
Automotive Ignition Coil Driver Circuits
Coil - On Plug Applications
Package
EMMITER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
Symbol
COLLECTOR
GATE
EMITTER
R
1
GATE
R
2
COLLECTOR
(FLANGE)
JEDEC TO-263AB
D
2
-Pak
JEDEC TO-262AA
EMITTER
1
ISL9V5045S3S / ISL9V5045S3 Rev. A
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
Device Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
BV
CER
BV
ECS
E
SCIS25
E
SCIS150
I
C25
I
C110
V
GEM
P
D
T
J
T
STG
T
L
T
pkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (I
C
= 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (I
C
= 10 mA)
At Starting T
J
= 25°C, I
SCIS
= 39.2A, L = 650
µHy
At Starting T
J
= 150°C, I
SCIS
= 31.1A, L = 650
µHy
Collector Current Continuous, At T
C
= 25°C, See Fig 9
Collector Current Continuous, At T
C
= 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Power Dissipation Total T
C
= 25°C
Power Dissipation Derating T
C
> 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500Ω
Ratings
480
24
500
315
51
43
±10
300
2
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/°C
°C
°C
°C
°C
kV
Package Marking and Ordering Information
Device Marking
V5045S
V5045S
V5045S
Device
ISL9V5045S3ST
ISL9V5045S3
ISL9V5045S3S
Package
TO-263AB
TO-262AA
TO-263AB
Reel Size
330mm
Tube
Tube
Tape Width
24mm
N/A
N/A
Quantity
800
50
50
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BV
CER
Collector to Emitter Breakdown Voltage
I
C
= 2mA, V
GE
= 0,
R
G
= 1KΩ, See Fig. 15
T
J
= -40 to 150°C
I
C
= 10mA, V
GE
= 0,
R
G
= 0, See Fig. 15
T
J
= -40 to 150°C
I
C
= -75mA, V
GE
= 0V,
T
C
= 25°C
I
GES
= ± 2mA
V
CER
= 320V, T
C
= 25°C
R
G
= 1KΩ, See T = 150°C
C
Fig. 11
V
EC
= 24V, See T
C
= 25°C
Fig. 11
T
C
= 150°C
420
450
480
V
BV
CES
Collector to Emitter Breakdown Voltage
445
475
505
V
BV
ECS
BV
GES
I
CER
Emitter to Collector Breakdown Voltage
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
30
±12
-
-
-
-
-
10K
-
±14
-
-
-
-
100
-
-
-
25
1
1
40
-
30K
V
V
µA
mA
mA
mA
Ω
Ω
I
ECS
R
1
R
2
Emitter to Collector Leakage Current
Series Gate Resistance
Gate to Emitter Resistance
On State Characteristics
V
CE(SAT)
V
CE(SAT)
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
I
C
= 10A,
V
GE
= 4.0V
I
C
= 15A,
V
GE
= 4.5V
T
C
= 25°C,
See Fig. 4
T
C
= 150°C
-
-
1.25
1.47
1.60
1.80
V
V
2
ISL9V5045S3S / ISL9V5045S3 Rev. A
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
Dynamic Characteristics
Q
G(ON)
V
GE(TH)
Gate Charge
Gate to Emitter Threshold Voltage
I
C
= 10A, V
CE
= 12V,
V
GE
= 5V, See Fig. 14
I
C
= 1.0mA,
V
CE
= V
GE,
See Fig. 10
I
C
= 10A,
T
C
= 25°C
T
C
= 150°C
V
CE
= 12V
-
1.3
0.75
-
32
-
-
3.0
-
2.2
1.8
-
nC
V
V
V
V
GEP
Gate to Emitter Plateau Voltage
Switching Characteristics
t
d(ON)R
t
rR
t
d(OFF)L
t
fL
SCIS
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching
V
CE
= 14V, R
L
= 1Ω,
V
GE
= 5V, R
G
= 1KΩ
T
J
= 25°C, See Fig. 12
V
CE
= 300V, L = 2mH,
V
GE
= 5V, R
G
= 1KΩ
T
J
= 25°C, See Fig. 12
T
J
= 25°C, L = 650
µH,
R
G
= 1KΩ, V
GE
= 5V, See
Fig. 1 & 2
-
-
-
-
-
0.7
2.1
10.8
2.8
-
4
7
15
15
500
µs
µs
µs
µs
mJ
Thermal Characteristics
Typical Characteristics
40
I
SCIS
, INDUCTIVE SWITCHING CURRENT (A)
35
30
25
20
15
T
J
= 150°C
10
5
SCIS Curves valid for V
clamp
Voltages of <480V
0
0
25
50
75
100
125
150
175
200
t
CLP
, TIME IN CLAMP (µS)
T
J
= 25°C
I
SCIS
, INDUCTIVE SWITCHING CURRENT (A)
R
G
= 1KΩ, V
GE
= 5V,V
dd
= 14V
40
R
G
= 1KΩ, V
GE
= 5V,V
dd
= 14V
35
30
T
J
= 25°C
25
20
15
10
5
SCIS Curves valid for V
clamp
Voltages of <480V
0
0
1
2
3
4
5
6
7
8
9
10
L, INDUCTANCE (mHy)
T
J
= 150°C
R
θJC
Thermal Resistance Junction-Case
TO-263, TO-262
-
-
0.5
°C/W
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
3
ISL9V5045S3S / ISL9V5045S3 Rev. A
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
Typical Characteristics
(Continued)
1.10
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
= 6A
1.05
V
GE
= 3.7V
1.00
V
GE
= 4.0V
1.25
I
CE
= 10A
1.20
V
GE
= 3.7V
1.15
V
GE
= 4.0V
0.95
V
GE
= 4.5V
V
GE
= 5.0V
1.10
V
GE
= 4.5V
V
GE
= 5.0V
1.05
V
GE
= 8.0V
0.90
V
GE
= 8.0V
0.85
-50
-25
0
25
50
75
100
125
150
175
1.00
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
Figure 4.Collector to Emitter On-State Voltage vs
Junction Temperature
50
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
50
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
= 8.0V
V
GE
= 5.0V
40
V
GE
= 4.5V
V
GE
= 4.0V
30
V
GE
= 3.7V
V
GE
= 8.0V
V
GE
= 5.0V
40
V
GE
= 4.5V
V
GE
= 4.0V
30
V
GE
= 3.7V
20
20
10
T
J
= - 40°C
0
0
1.0
2.0
3.0
4.0
10
T
J
= 25°C
0
0
1.0
2.0
3.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
4.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs Collector to Emitter
On-State Voltage
50
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
Figure 6. Collector Current vs Collector to Emitter
On-State Voltage
50
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
= 8.0V
V
GE
= 5.0V
40
V
GE
= 4.5V
V
GE
= 4.0V
30
V
GE
= 3.7V
DUTY CYCLE < 0.5%, V
CE
= 5V
PULSE DURATION = 250µs
40
30
T
J
= 175°C
20
T
J
= 25°C
10
T
J
= -40°C
0
1.0
1.5
2.5
3.5
2.0
3.0
V
GE
, GATE TO EMITTER VOLTAGE (V)
4.0
4.5
20
10
T
J
= 175°C
0
0
1.0
2.0
3.0
4.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
Figure 8. Transfer Characteristics
4
ISL9V5045S3S / ISL9V5045S3 Rev. A
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
Typical Characteristics
(Continued)
55
50
I
CE
, DC COLLECTOR CURRENT (A)
45
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
175
0.8
-50
-25
0
25
50
75
100
125
150
175
V
GE
= 4.0V
V
TH
, THRESHOLD VOLTAGE (V)
1.8
2.0
V
CE
= V
GE
I
CE
= 1mA
1.6
1.4
1.2
1.0
T
C
, CASE TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
10000
V
ECS
= 24V
1000
LEAKAGE CURRENT (µA)
SWITCHING TIME (µS)
Figure 10. Threshold Voltage vs Junction
Temperature
20
I
CE
= 6.5A, V
GE
= 5V, R
G
= 1KΩ
18
16
14
Inductive t
OFF
12
10
8
6
Resistive t
ON
4
Resistive t
OFF
100
V
CES
= 300V
10
V
CES
= 250V
1
0.1
-50
-25
0
25
50
75
100
125
150
175
2
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
3000
FREQUENCY = 1 MHz
2500
C, CAPACITANCE (pF)
V
GE
, GATE TO EMITTER VOLTAGE (V)
7
6
5
8
Figure 12. Switching Time vs Junction
Temperature
I
G(REF)
= 1mA, R
L
= 0.6Ω, T
J
= 25°C
2000
C
IES
V
CE
= 12V
4
3
2
1
0
V
CE
= 6V
1500
1000
C
RES
500
C
OES
0
0
5
10
15
20
25
0
10
20
30
40
50
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
Figure 13. Capacitance vs Collector to Emitter
Voltage
Figure 14. Gate Charge
5
ISL9V5045S3S / ISL9V5045S3 Rev. A
www.fairchildsemi.com
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