Z0109NA
4Q Triac
23 August 2013
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT54 (TO-92) plastic package
intended for use in applications requiring direct interfacing to logic ICs and low power
gate drivers.
2. Features and benefits
•
•
•
•
•
•
Direct interfacing to logic level ICs
Direct interfacing to low power gate drive circuits
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Sensitive gate in four quadrants
Triggering in all four quadrants
3. Applications
•
•
•
•
General purpose low power motor control
Home appliances
Industrial process control
Low power AC Fan controllers
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
lead
≤ 45 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
-
-
10
mA
-
-
10
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
800
8
1
Unit
V
A
A
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TO
-92
NXP Semiconductors
Z0109NA
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Min
-
-
Typ
-
-
Max
10
10
Unit
mA
mA
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
T2
G
T1
main terminal 2
gate
main terminal 1
321
Simplified outline
Graphic symbol
T2
sym051
T1
G
TO-92 (SOT54)
6. Ordering information
Table 3.
Ordering information
Package
Name
Z0109NA
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
Type number
Z0109NA
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© NXP N.V. 2013. All rights reserved
Product data sheet
23 August 2013
2 / 13
NXP Semiconductors
Z0109NA
4Q Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
lead
≤ 45 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
800
1
8
8.5
0.32
50
50
50
20
1
2
0.1
150
125
Unit
V
A
A
A
2
I2t for fusing
rate of rise of on-state current
t
p
= 10 ms; SIN
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 0.1 A/µs;
T2+ G+
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 0.1 A/µs;
T2+ G-
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 0.1 A/µs;
T2- G-
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 0.1 A/µs;
T2- G+
A s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
I
GM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
-
-40
-
Z0109NA
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© NXP N.V. 2013. All rights reserved
Product data sheet
23 August 2013
3 / 13
NXP Semiconductors
Z0109NA
4Q Triac
1.2
I
T(RMS )
(A)
003aac264
16
I
T(RMS)
(A)
003a a f977
12
0.8
8
0.4
4
0
-50
0
50
100
150
T
lea d
(°C)
0
10
-2
10
-1
1
10
surge duration (s)
Fig. 1.
RMS on-state current as a function of lead
temperature; maximum values
f = 50 Hz; T
lead
= 45 °C
Fig. 2.
RMS on-state current as a function of surge
duration; maximum values
003aac259
2.0
P
tot
(W)
1.6
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
alpha
alpha = 180°
120°
90°
60°
30°
1.2
0.8
0.4
0.0
0
0.2
0.4
0.6
0.8
1
I
T(RMS )
(A)
1.2
alpha = conduction angle
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
Z0109NA
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© NXP N.V. 2013. All rights reserved
Product data sheet
23 August 2013
4 / 13
NXP Semiconductors
Z0109NA
4Q Triac
I
TSM
(A)
10
003aad318
8
6
4
IT
ITSM
t
1/f
2
0
Tj(init) = 25
°C
max
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4.
10
3
I
TS M
(A)
10
2
(1)
(2)
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003a a d319
I
T
ITSM
t
t
p
Tj(init) = 25
°C
max
10
1
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
Z0109NA
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© NXP N.V. 2013. All rights reserved
Product data sheet
23 August 2013
5 / 13
NXP MCU
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