PD - 95150
Advanced Process Technology
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Surface Mount (IRL3103S)
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Low-profile through-hole (IRL3103L)
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175°C Operating Temperature
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Fast Switching
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Fully Avalanche Rated
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Lead-Free
Description
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IRL3103SPbF
IRL3103LPbF
HEXFET
®
Power MOSFET
D
V
DSS
= 30V
R
DS(on)
= 12mΩ
G
S
Absolute Maximum Ratings
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRL3103L) is available for low-
profile applications.
Advanced HEXFET
®
Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
I
D
= 64A
D
2
Pak
IRL3103S
TO-262
IRL3103L
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
64
45
220
94
0.63
± 16
34
22
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Typ.
–––
–––
Max.
1.6
40
Units
°C/W
www.irf.com
1
04/19/04
IRL3103S/LPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Min.
30
–––
–––
–––
1.0
22
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
12
V
GS
= 10V, I
D
= 34A
mΩ
16
V
GS
= 4.5V, I
D
= 28A
–––
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 34A
25
V
DS
= 30V, V
GS
= 0V
µA
250
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 16V
nA
-100
V
GS
= -16V
33
I
D
= 34A
5.9
nC
V
DS
= 24V
17
V
GS
= 4.5V, See Fig. 6 and 13
–––
V
DD
= 15V
–––
I
D
= 34A
–––
R
G
= 1.8Ω
–––
V
GS
= 4.5V, See Fig. 10
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
1650 –––
V
GS
= 0V
650 –––
V
DS
= 25V
110 –––
pF
ƒ = 1.0MHz, See Fig. 5
1320
130 mJ I
AS
= 34A, L = 0.22mH
Typ.
–––
0.028
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.9
120
14
9.1
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
64
––– –––
showing the
A
G
integral reverse
––– ––– 220
S
p-n junction diode.
––– ––– 1.2
V
T
J
= 25°C, I
S
= 34A, V
GS
= 0V
––– 57
86
ns
T
J
= 25°C, I
F
= 34A
––– 110 170
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
Starting T
J
= 25°C, L = 220µH
T
J
≤
175°C
max. junction temperature. (See fig. 11)
R
G
= 25Ω, I
AS
= 34A, V
GS
=10V (See Figure 12)
Pulse width
≤
400µs; duty cycle
≤
2%.
This is a typical value at device destruction and represents
I
SD
≤
34A, di/dt
≤
120A/µs, V
DD
≤
V
(BR)DSS
,
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994
2
www.irf.com
IRL3103S/LPbF
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
TOP
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
1000
100
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
10
10
2.7V
2.7V
20µs PULSE WIDTH
T = 25 C
J
°
1
10
100
1
0.1
1
0.1
20µs PULSE WIDTH
T = 175 C
J
°
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
I
D
= 56A
T
J
= 25
°
C
T
J
= 175
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
2.0
100
1.5
1.0
10
0.5
1
2.0
V DS = 15V
20µs PULSE WIDTH
6.0
7.0
3.0
4.0
5.0
8.0
0.0
-60 -40 -20
V
GS
= 10V
0
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRL3103S/LPbF
3000
2500
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
15
I
D
= 34A
12
C, Capacitance (pF)
2000
Ciss
C
oss
V
DS
= 24V
V
DS
= 15V
9
1500
6
1000
500
C
rss
1
10
100
3
0
0
FOR TEST CIRCUIT
SEE FIGURE 13
30
0
10
20
40
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T
J
= 175
°
C
ID , Drain-to-Source Current (A)
100
10
100µsec
10
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
VDS , Drain-toSource Voltage (V)
10msec
100
1
T
J
= 25
°
C
0.1
0.0
V
GS
= 0 V
0.4
0.8
1.2
1.6
2.0
2.4
1
V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRL3103S/LPbF
70
V
DS
60
R
D
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
50
40
30
20
10
0
-
V
DD
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
T
C
, Case Temperature
( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.0001
0.001
P
DM
t
1
t
2
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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