Si4133
Si4123/22/13/12
D
U A L
- B
A N D
R F S
Y N T H E S I Z E R
W
I T H
I
N TE G R A T E D
V C O
S
F
OR
W
I R E L E S S
C
O M M U N I C A T I O N S
F
EATURES
Dual-band RF synthesizers
900 MHz to 1.8 GHz
RF2: 750 MHz to 1.5 GHz
RF1:
IF synthesizer
IF:
62.5 to 1000 MHz
Integrated VCOs, loop filters,
varactors, and resonators
Minimal (2) number of external
components required
Low phase noise
Programmable powerdown modes
1 µA standby current
18 mA typical supply current
2.7 to 3.6 V operation
Packages: 24-pin TSSOP,
28-lead QFN
Lead-free
Ordering Information:
See page 31.
and RoHS compliant
Applications
Pin Assignments
Dual-band communications
Digital cellular telephones GSM 850, E-GSM 900, DCS 1800,
PCS 1900
Digital cordless phones
Analog cordless phones
Wireless local loop
Si4133-GT
SCLK
SDATA
GNDR
RFLD
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
SEN
VDDI
IFOUT
GNDI
IFLB
IFLA
GNDD
VDDD
GNDD
XIN
PWDN
AUXOUT
Description
The Si4133 is a monolithic integrated circuit that performs both IF and dual-
band RF synthesis for wireless communications applications. The Si4133
includes three VCOs, loop filters, reference and VCO dividers, and phase
detectors. Divider and powerdown settings are programmable with a three-
wire serial interface.
RFLC
GNDR
RFLB
RFLA
GNDR
GNDR
RFOUT
Functional Block Diagram
VDDR
XIN
SDATA
IFOUT
GNDR
Reference
Amplifier
Powerdown
Control
R
Si4133-GM
SCLK
RF1
PWDN
N
R
Phase
Detector
RF2
RFOUT
GNDR
28 27 26 25 24 23 22
1
2
3
4
5
6
7
8
GNDR
SEN
VDDI
RFLB
GNDI
Phase
Detector
RFLA
21
20
19
GNDI
IFLB
IFLA
GNDD
VDDD
GNDD
XIN
SDATA
SCLK
SEN
Serial
Interface
22-bit
Data
Register
RFLC
RFLD
RFLD
RFLC
GNDR
RFLB
N
R
Phase
Detector
IF
GND
Pad
18
17
16
15
AUXOUT
Test
Mux
IFDIV
IFOUT
RFLA
GNDR
PWDN
GNDR
Patents pending
Rev. 1.61 1/10
Copyright © 2010 by Silicon Laboratories
Si4133
RFOUT
GNDD
VDDR
IFLB
AUXOUT
N
IFLA
9
10 11 12 13 14
Si4133
T
ABLE
Section
OF
C
ONTENTS
Page
1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
2. Typical Application Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3. Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.1. Serial Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.2. Setting the VCO Center Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.3. Extended Frequency Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.4. Self-Tuning Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.5. Output Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.6. PLL Loop Dynamics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.7. RF and IF Outputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.8. Reference Frequency Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.9. Powerdown Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.10. Auxiliary Output (AUXOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4. Control Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
5. Pin Descriptions: Si4133-GT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
6. Pin Descriptions: Si4133-GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
7. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
8. Si4133 Derivative Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31
9. Package Outline: Si4133-GT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
10. Package Outline: Si4133-GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36
Rev. 1.61
3
Si4133
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Ambient Temperature
Supply Voltage
Supply Voltages Difference
Symbol
T
A
V
DD
V
(V
DDR
– V
DDD
),
(V
DDI
– V
DDD
)
Test Condition
Min
–40
2.7
–0.3
Typ
25
3.0
—
Max
85
3.6
0.3
Unit
°C
V
V
Note:
All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless otherwise stated.
Table 2. Absolute Maximum Ratings
1,2
Parameter
DC Supply Voltage
Input Current
3
Input Voltage
3
Storage Temperature Range
Symbol
V
DD
I
IN
V
IN
T
STG
Value
–0.5 to 4.0
±10
–0.3 to V
DD
+0.3
–55 to 150
Unit
V
mA
V
o
C
Notes:
1.
Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of
this device should only be done at ESD-protected workstations.
3.
For signals SCLK, SDATA, SEN, PWDN and XIN.
4
Rev. 1.61
Si4133
Table 3. DC Characteristics
(V
DD
= 2.7 to 3.6 V, T
A
= –40 to 85 °C)
Parameter
Total Supply Current
1
RF1 Mode Supply Current
1
RF2 Mode Supply Current
1
IF Mode Supply Current
1
Standby Current
High Level Input Voltage
2
Low Level Input Voltage
2
High Level Input Current
2
Low Level Input Current
2
High Level Output Voltage
3
Low Level Output Voltage
3
V
IH
V
IL
I
IH
I
IL
V
OH
V
OL
V
IH
=
3.6 V,
V
DD
= 3.6 V
V
IL
=
0 V,
V
DD
=
3.6 V
I
OH
= –500 µA
I
OH
= 500 µA
PWDN = 0
Symbol
Test Condition
RF1 and IF operating
Min
—
—
—
—
—
0.7 V
DD
—
–10
–10
V
DD
–0.4
—
Typ
18
10
9
8
1
—
—
—
—
—
—
Max
27
16
16
13
—
—
0.3 V
DD
10
10
—
0.4
Unit
mA
mA
mA
mA
µA
V
V
µA
µA
V
V
Notes:
1.
RF1 = 1.6 GHz, RF2 = 1.1 GHz, IFOUT = 550 MHz, LPWR = 0.
2.
For signals SCLK, SDATA, SEN, and PWDN.
3.
For signal AUXOUT.
Rev. 1.61
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
