IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT132-600D
4Q Triac
6 October 2016
Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package intended for
use in general purpose bidirectional switching and phase control applications. This very sensitive
gate "series D" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits
and other low power gate trigger circuits.
2. Features and benefits
•
•
•
•
•
•
•
Direct interfacing to logic level ICs
Direct interfacing to low power gate drivers and microcontrollers
Enhanced current surge capability
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Triggering in all four quadrants
Very sensitive gate
3. Applications
•
•
•
Air conditioner indoor fan control
Battery powered applications
General purpose switching and phase control
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
lead
≤ 51 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
-
-
Typ
-
-
-
-
-
2
2.5
Max
600
1
16
17.5
125
5
5
Unit
V
A
A
A
°C
mA
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
BT132-600D
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Min
-
-
-
-
-
Typ
2.5
5
1.2
1.4
5
Max
5
10
10
1.7
-
Unit
mA
mA
mA
V
V/µs
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 5 A; T
j
= 25 °C;
Fig. 10
V
DM
= 402 V; T
j
= 125 °C; (V
DM
=
67% of V
DRM
); exponential waveform;
R
GT1(ext)
= 1 kΩ
Dynamic characteristics
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
Symbol Description
T2
G
T1
main terminal 2
gate
main terminal 1
321
Simplified outline
Graphic symbol
T2
sym051
T1
G
TO-92 (SOT54)
6. Ordering information
Table 3. Ordering information
Type number
BT132-600D
Package
Name
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
BT132-600D
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
6 October 2016
2 / 13
WeEn Semiconductors
BT132-600D
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
2
Conditions
Min
-
Max
600
1
16
17.5
1.28
50
50
50
10
2
5
0.5
150
125
003aab039
Unit
V
A
A
A
A²s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
full sine wave; T
lead
≤ 51 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 0.2 A
-
-
-
-
-
-
-
-
I t
dI
T
/dt
2
I
GM
P
GM
P
G(AV)
T
stg
T
j
3
I
T(RMS)
(A)
2
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
003aab042
-
-
over any 20 ms period
-
-40
-
1.2
I
T(RMS)
(A)
0.8
51.2 °C
1
0.4
0
10
- 2
10
- 1
1
10
surge duration (s)
0
- 50
0
50
100
150
T
lead (°C)
f = 50 Hz; T
lead
= 51.2 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
T
lead
= 51.2 °C
Fig. 2. RMS on-state current as a function of lead
temperature; maximum values
BT132-600D
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
6 October 2016
3 / 13
WeEn Semiconductors
BT132-600D
4Q Triac
1.5
P
tot
(W)
1
α
α
003aab038
35
T
lead(max)
(°C)
65
α =180°
120°
90°
60°
30°
0.5
95
0
0
0.2
0.4
0.6
0.8
1
I
T(RMS)
(A)
1.2
125
α = conduction angle
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
I
TSM
(A)
20
24
aaa-011034
16
12
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
1
10
10
2
10
3
number of cycles
10
4
8
4
0
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT132-600D
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
6 October 2016
4 / 13
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
