TECHNICAL DATA
PNP DUAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/496
Devices
2N5795
2N5796
2N5796U
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CEO
V
CBO
V
EBO
I
C
0
Value
60
60
5.0
600
Units
Vdc
Vdc
Vdc
mAdc
TO-78*
One
(1)
Section
0.5
Total Power Dissipation
@ T
A
= +25 C
P
T
T
J
,
T
stg
Both
(2)
Sections
0.6
W
0
Operating & Storage Junction Temperature Range
1) Derate linearly 2.86 mW/
0
C for T
A
≥
+25
0
C
2) Derate linearly 3.43 mW/
0
C for T
A
≥
+25
0
C
-65 to +175
C
6 PIN SURFACE
MOUNT*
*See
MILPRF19500/496 for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)CEO
I
CBO
Min.
60
Max.
Unit
Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CB
= 50 Vdc
V
CBO
= 60 Vdc
Emitter-Base Cutoff Current
V
EB
= 3.0 Vdc
V
EB
= 5.0 Vdc
10
10
100
10
ηAdc
µAdc
ηAdc
µAdc
I
EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
42203
Page 1 of 2
2N5795, 2N5796 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
I
C
= 100
µAdc,
V
CE
= 10 Vdc
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 300 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 1.0 Vdc
I
C
= 100
µAdc,
V
CE
= 10 Vdc
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 300 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 1.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
Base-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
2N5795
h
FE
40
40
40
40
20
20
75
100
100
100
50
50
150
2N5796
2N5796U
h
FE
300
V
CE(sat)
0.4
1.6
1.3
2.6
2.0
10
8.0
25
Vdc
V
BE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Forward Current Transfer Ratio
I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
Input Capacitance
V
EB
= 2.0 Vdc, I
C
= 0, 100 kHz
≤
f
≤
1.0 MHz
h
fe
C
obo
C
ibo
t
t
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 Vdc; I
C
= 150 mAdc; I
B1
=
15 mAdc
Turn-Off Time
V
CC
= 30 Vdc; I
C
= 150 mAdc; I
B1
=
I
B2
=
15 mAdc
1)
Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
on
50
140
ηs
ηs
off
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
42203
Page 2 of 2
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
