PD - 95219A
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Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
100% R
G
Tested
Lead-Free
IRL2203NSPbF
IRL2203NLPbF
HEXFET
®
Power MOSFET
D
V
DSS
= 30V
R
DS(on)
= 7.0mΩ
G
S
I
D
= 116A
Advanced HEXFET
®
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
2
Pak
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL2203NL) is available for low-profile applications.
Description
D
2
Pak
TO-262
IRL2203NSPbF IRL2203NLPbF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
Parameter
Continuous Drain Current, V
GS
@ 10V
Max
116
82
400
3.8
180
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
DM
i
Units
A
W
W
W/°C
V
A
mJ
V/ns
°C
P
D
@T
A
= 25°C
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
P
D
@T
C
= 25°C Power Dissipation
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Ã
1.2
± 16
60
18
5.0
-55 to + 175
300 (1.6mm from case)
Thermal Resistance
Symbol
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount, steady state)
k
Parameter
Typ
Max
0.85
40
Units
°C/W
jk
–––
–––
www.irf.com
1
10/01/10
IRL2203NS/LPbF
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Min
30
–––
–––
–––
1.0
73
–––
–––
–––
–––
–––
–––
–––
0.2
–––
–––
–––
–––
–––
–––
–––
–––
Typ
–––
0.029
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
160
23
66
4.5
7.5
3290
1270
Max Units
–––
–––
7.0
10
3.0
–––
25
250
100
-100
60
14
33
3.0
–––
–––
–––
–––
–––
Nh
–––
–––
–––
–––
290
pF
mJ
Ω
V
DD
= 15V
I
D
= 60A
R
G
= 1.8Ω
nC
V
S
µA
nA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 60A
V
GS
= 4.5V, I
D
V/°C Reference to 25°C, I
D
= 1mA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 60A
V
DS
= 30V, V
GS
= 0V
V
GS
= 16V
V
GS
= -16V
I
D
= 60A
V
DS
= 24V
f
= 48A
f
f
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 4.5V, See Fig. 6 and 13
V
GS
= 4.5V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
f
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
I
AS
= 60A, L = 0.16mH
d
–––
170
––– 1320
g
h
i
Source-Drain Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min
–––
–––
–––
–––
–––
Typ
–––
–––
–––
56
110
Max Units
116
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 60A, V
GS
= 0V
T
J
= 25°C, I
F
= 60A
di/dt = 100A/µs
Ã
400
1.2
84
170
V
ns
nC
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
This is a typical value at device destruction and represents
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 0.16mH R
G
= 25Ω,
I
AS
= 60A, V
GS
=10V (See Figure 12)
I
SD
≤
60A, di/dt
≤
110A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400µs; duty cycle
≤
2%.
2
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994.
R
θ
is measured at T
J
approximately 90°C
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IRL2203NS/LPbF
1000
VGS
TOP
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
100
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
2.7V
10
10
2.7V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
T
J
= 25
°
C
T
J
= 175
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 100A
I
D
, Drain-to-Source Current (A)
2.0
1.5
100
1.0
0.5
10
2.0
V DS = 15V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRL2203NS/LPbF
6000
5000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
15
I
D
= 60A
V
DS
= 24V
V
DS
= 15V
12
C, Capacitance (pF)
4000
Ciss
3000
9
6
2000
Coss
1000
3
0
Crss
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
20
40
60
80
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T
J
= 175
°
C
10
ID, Drain-to-Source Current (A)
1000
100
100µsec
1msec
1
T
J
= 25
°
C
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
VDS , Drain-toSource Voltage (V)
10msec
0.1
0.0
V
GS
= 0 V
0.4
0.8
1.2
1.6
2.0
2.4
1
V
SD
,Source-to-Drain Voltage (V)
100
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRL2203NS/LPbF
120
LIMITED BY PACKAGE
100
V
DS
V
GS
R
G
R
D
D.U.T.
+
I
D
, Drain Current (A)
80
-
V
DD
60
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
40
Fig 10a.
Switching Time Test Circuit
20
V
DS
90%
0
25
50
T
C
, Case Temperature ( °C)
75
100
125
150
175
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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