SMD Zener Diode
CZRT55C2V4-GThru CZRT55C39-G
Voltage: 2.4 to 39 Volts
Power: 350 mWatts
RoHS Device
Features
-Planar die construction
-350mW power dissipation
-Ideally suited for automated assembly
0.055(1.40)
SOT-23
0.118(3.00)
0.110(2.80)
3
0.047(1.20)
process
-Pb free product are available : 99% Sn
above can meet RoHS
1
0.079(2.00)
0.071(1.80)
2
Mechanical data
-Case: SOT-23, Molded plastic
-Terminals: Solderable per MIL-STD-
202G,method 208
-Polarity: See diagram below
0.004(0.10) max
0.041(1.05)
0.035(0.90)
0.006(0.15)
0.003(0.08)
0.100(2.55)
0.089(2.25)
-Weight: 0.008 gram(approx.)
-Mounting position: Any
3
0.020(0.50)
0.012(0.30)
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
1
2
Maximum Rating And Electrical Characteristics
Parameter
Forward Voltage (Notes 2)
Power Dissipation (Notes 1)
Thermal Resistance, Junction to Ambient Air
Operating junction and Storage Temperature Range
@ IF=10mA
Symbol
V
F
P
d
R
θJA
T
J
Value
0.9
350
357
-65 to +150
Unit
V
mW
°C/W
O
C
Notes:
1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses,period=5ms,pulse width=300us.
3. f=1KHz
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SMD Zener Diode
RATING AND CHARACTERISTIC CURVES (CZRT55C2V4-G Thru CZRT55C39-G )
(CZRT55C2V4-G
CZRT55C39-G)
Fig.1- Power Derating Curve
500
50
Fig.2- Zener Breakdown Characteristics
T
J
=25 C
C2V7
C3V9
C5V6
C6V8
O
400
40
C3V3
C4V7
C8V2
C9V1
Power Dosso[atopm ,(mW)
300
Note 1
Zener Current , (mA)
30
Test current
I
Z
=5.0mA
200
Note 3
20
100
10
0
0
100
Ambient Temperature , (°C)
200
0
0
1
2
3
4
5
6
7
8
9
10
Zener Voltage , (V)
Fig.3-Zener Breakdown Characterisitcs
30
T
J
=25 C
O
Fig.4- Total Capacitance vs Nominal Zener Voltage
1000
C10
C12
T
J
= 25°C
V
R
= 1V
V
R
= 2V
20
C15
Total Capacitance ,
(pF)
Zener Current , (mA)
C18
C22
Test current
I
Z
=2mA
100
10
Test current
I
Z
=5mA
V
R
= 1V
V
R
= 2V
C33
C27
C36
C39
0
10
0
10
20
30
40
0
10
Nominal Zener Voltage , (V)
100
Zener Voltage , (V)
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