SRAM 36Mb, QUAD (Burst of 4), Sync SRAM, 1M x 36, 2.5 Read Latency, 165 Ball FBGA (13x15 mm), RoHS, ODT Option 1
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | ISSI(芯成半导体) |
产品种类 Product Category | SRAM |
RoHS | Details |
Memory Size | 36 Mbit |
Organization | 1 M x 36 |
Access Time | 2.5 ns |
Maximum Clock Frequency | 400 MHz |
接口类型 Interface Type | Parallel |
电源电压-最大 Supply Voltage - Max | 1.89 V |
电源电压-最小 Supply Voltage - Min | 1.71 V |
Supply Current - Max | 620 mA |
最小工作温度 Minimum Operating Temperature | - 40 C |
最大工作温度 Maximum Operating Temperature | + 85 C |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | FBGA-165 |
Memory Type | QDR |
类型 Type | Synchronous |
Moisture Sensitive | Yes |
工厂包装数量 Factory Pack Quantity | 144 |
IS61QDPB41M36A1-400B4LI | IS61QDPB41M36A-450M3I | |
---|---|---|
描述 | SRAM 36Mb, QUAD (Burst of 4), Sync SRAM, 1M x 36, 2.5 Read Latency, 165 Ball FBGA (13x15 mm), RoHS, ODT Option 1 | SRAM 36M, 1.8V, 450Mhz QUAD Sync SRAM |
Product Attribute | Attribute Value | Attribute Value |
制造商 Manufacturer |
ISSI(芯成半导体) | ISSI(芯成半导体) |
产品种类 Product Category |
SRAM | SRAM |
Memory Size | 36 Mbit | 36 Mbit |
Organization | 1 M x 36 | 1 M x 36 |
Access Time | 2.5 ns | 8.4 ns |
Maximum Clock Frequency | 400 MHz | 450 MHz |
接口类型 Interface Type |
Parallel | Parallel |
电源电压-最大 Supply Voltage - Max |
1.89 V | 1.89 V |
电源电压-最小 Supply Voltage - Min |
1.71 V | 1.71 V |
Supply Current - Max | 620 mA | 1100 mA |
最小工作温度 Minimum Operating Temperature |
- 40 C | - 40 C |
最大工作温度 Maximum Operating Temperature |
+ 85 C | + 85 C |
安装风格 Mounting Style |
SMD/SMT | SMD/SMT |
封装 / 箱体 Package / Case |
FBGA-165 | FBGA-165 |
Memory Type | QDR | QDR |
类型 Type |
Synchronous | Synchronous |
Moisture Sensitive | Yes | Yes |
工厂包装数量 Factory Pack Quantity |
144 | 105 |
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