UPS3100e3
3 A High Voltage Schottky Barrier Rectifier
DESCRIPTION
KEY FEATURES
WWW .
Microsemi
.C
OM
This UPS3100e3 in the Powermite3
®
package is a high efficiency Schottky
rectifier that is also RoHS compliant offering high current/power capabilities
previously found only in much larger packages. They are ideal for SMD
applications that operate at high frequencies. In addition to its size
advantages, the Powermite3
®
package includes a full metallic bottom that
eliminates the possibility of solder flux entrapment during assembly and a
unique locking tab act as an efficient heat path to the heat-sink mounting.
Its innovative design makes this device ideal for use with automatic
insertion equipment.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
Very low thermal resistance package
RoHS Compliant with e3 suffix part number
Guard-ring-die construction for transient
protection
Efficient heat path with Integral locking
bottom metal tab
Low forward voltage
Full metallic bottom eliminates flux
entrapment
Compatible with automatic insertion
Low profile-maximum height of 1mm
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on Rated Load@ T
c
=90 ºC
Storage Temperature
Junction Temperature
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
o
I
FSM
T
STG
T
J
Value
Unit
APPLICATIONS/BENEFITS
Switching and Regulating Power Supplies.
Silicon Schottky (hot carrier) rectifier for
minimal reverse voltage recovery
Elimination of reverse-recovery oscillations
to reduce need for EMI filtering
Charge Pump Circuits
Reduces reverse recovery loss with low I
RM
Small foot print
190 X 260 mils (1:1 Actual size)
See mounting pad details on pg 3
MECHANICAL & PACKAGING
100
70
3
50
-55 to +150
-55 to +125
V
V
A
A
ºC
ºC
THERMAL CHARACTERISTICS
Thermal Resistance
Junction-to-Case (bottom)
Junction to Ambient (1)
R
θJC
R
θJA
2.5
65
ºC/ Watt
ºC/ Watt
(1) When mounted on FR-4 PC board using 2 oz copper with recommended minimum foot print
Powermite 3™
•
CASE: Void-free transfer molded
thermosetting epoxy compound meeting
UL94V-0
•
FINISH: Annealed matte-Tin plating over
copper and readily solderable per MIL-
STD-750 method 2026 (consult factory for
Tin-Lead plating)
•
POLARITY: See figure (left)
•
MARKING: S3100•
•
WEIGHT: 0.072 gram (approx.)
•
Package dimension on last page
•
Tape & Reel option: 16 mm tape per
Standard EIA-481-B, 5000 on 13” reel
UPS3100E3
UPS3100E3
Copyright
©
2007
10-15-2007 Rev D
Microsemi
Page 1
UPS3100e3
3 A High Voltage Schottky Barrier Rectifier
WWW .
Microsemi
.C
OM
Notes: 1. T
A
= T
SOLDERING POINT,
R
ΘJS
= 2.5C/W, R
ΘSA
= 0ºC/W.
2. Device mounted on GETEK substrate, 2" x 2", 2 oz. copper , double-sided , cathode
pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". R
ΘJA
in range of
20-35°C/W.
3. Device mounted on FRA-4 substrate, 2" x 2", 2 oz. copper, single-sided, pad layout
R
ΘJA
in range of 65°C/W. See mounting pad below.
MOUNTING PAD DIMENSIONS
UPS3100E3
UPS3100E3
Mounting Pad Dimensions: inches [mm]
Copyright
©
2007
10-15-2007 Rev D
Microsemi
Page 3
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