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FM24C04B-G

产品描述F-RAM 4Kb Serial I2C 5V FRAM
产品类别存储    存储   
文件大小358KB,共18页
制造商Cypress(赛普拉斯)
标准
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FM24C04B-G概述

F-RAM 4Kb Serial I2C 5V FRAM

FM24C04B-G规格参数

参数名称属性值
是否Rohs认证符合
零件包装代码SOIC
包装说明SOP, SOP8,.25
针数8
Reach Compliance Codecompliant
ECCN代码EAR99
JESD-30 代码R-PDSO-G8
JESD-609代码e3
长度4.9 mm
内存密度4096 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度8
混合内存类型N/A
湿度敏感等级3
功能数量1
端子数量8
字数512 words
字数代码512
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织512X8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
电源5 V
认证状态Not Qualified
座面最大高度1.75 mm
最大待机电流0.00001 A
最大压摆率0.0004 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Matte Tin (Sn)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
宽度3.9 mm
Base Number Matches1

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FM24C04B
4-Kbit (512 × 8) Serial (I
2
C) F-RAM
4-Kbit (512 × 8) Serial (I
2
C) F-RAM
Features
Functional Description
The FM24C04B is a 4-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by EEPROM and other nonvolatile
memories.
Unlike EEPROM, the FM24C04B performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. Also, F-RAM exhibits much lower power during writes
than EEPROM since write operations do not require an internally
elevated power supply voltage for write circuits. The FM24C04B
is capable of supporting 10
14
read/write cycles, or 100 million
times more write cycles than EEPROM.
These capabilities make the FM24C04B ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The
combination of features allows more frequent data writing with
less overhead for the system.
The FM24C04B provides substantial benefits to users of serial
(I
2
C) EEPROM as a hardware drop-in replacement. The device
specifications are AEC-Q100 qualified and guaranteed over an
industrial temperature range of –40
C
to +85
C.
For a complete list of related documentation, click
here.
4-Kbit ferroelectric random access memory (F-RAM) logically
organized as 512 × 8
14
High-endurance 100 trillion (10 ) read/writes
151-year data retention (See the
Data Retention and
Endurance
table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I
2
C)
Up to 1-MHz frequency
2
Direct hardware replacement for serial (I C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100
A
active current at 100 kHz
4
A
(typ) standby current
Voltage operation: V
DD
= 4.5 V to 5.5 V
AEC-Q100 grade 3 qualified
Industrial temperature: –40
C
to +85
C
8-pin small outline integrated circuit (SOIC) package
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
Counter
Address
Latch
9
512 x 8
F-RAM Array
8
SDA
Serial to Parallel
Converter
Data Latch
8
SCL
WP
A2-A1
Control Logic
Cypress Semiconductor Corporation
Document Number: 001-84446 Rev. *L
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised April 19, 2017

 
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