MOSFET N-Ch 60V 0.0038 Ohm 22A STripFET VI MOS
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | ST(意法半导体) |
产品种类 Product Category | MOSFET |
RoHS | Details |
技术 Technology | Si |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | PowerFLAT-5x6-8 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 14 A |
Rds On - Drain-Source Resistance | 4.5 mOhms |
Vgs th - Gate-Source Threshold Voltage | 2.4 V |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 130 nC |
Configuration | Single |
Pd-功率耗散 Pd - Power Dissipation | 80 W |
系列 Packaging | Cut Tape |
系列 Packaging | MouseReel |
系列 Packaging | Reel |
Transistor Type | 1 N-Channel |
工厂包装数量 Factory Pack Quantity | 3000 |
STL100N6LF6 | STL60N32N3LL | STS8DNF3LL | |
---|---|---|---|
描述 | MOSFET N-Ch 60V 0.0038 Ohm 22A STripFET VI MOS | MOSFET Dual N-Ch 30V 15A pwr MOSFET | MOSFET N-Ch 30 Volt 8 Amp |
Brand Name | - | STMicroelectronics | STMicroelectronics |
厂商名称 | - | ST(意法半导体) | ST(意法半导体) |
包装说明 | - | POWERFLAT-8 | SMALL OUTLINE, R-PDSO-G8 |
针数 | - | 8 | 8 |
Reach Compliance Code | - | compliant | compliant |
ECCN代码 | - | EAR99 | EAR99 |
配置 | - | SERIES, 2 ELEMENTS | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压 | - | 30 V | 30 V |
最大漏极电流 (Abs) (ID) | - | 60 A | 8 A |
最大漏极电流 (ID) | - | 32 A | 8 A |
最大漏源导通电阻 | - | 0.12 Ω | 0.024 Ω |
FET 技术 | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | - | R-PDSO-N4 | R-PDSO-G8 |
JESD-609代码 | - | e3 | e4 |
湿度敏感等级 | - | 3 | 1 |
元件数量 | - | 2 | 2 |
端子数量 | - | 4 | 8 |
工作模式 | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | - | 150 °C | 150 °C |
封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | - | RECTANGULAR | RECTANGULAR |
封装形式 | - | SMALL OUTLINE | SMALL OUTLINE |
峰值回流温度(摄氏度) | - | 260 | 260 |
极性/信道类型 | - | N-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | - | 50 W | 2 W |
最大脉冲漏极电流 (IDM) | - | 48 A | 32 A |
认证状态 | - | Not Qualified | Not Qualified |
表面贴装 | - | YES | YES |
端子面层 | - | Matte Tin (Sn) - annealed | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式 | - | NO LEAD | GULL WING |
端子位置 | - | DUAL | DUAL |
处于峰值回流温度下的最长时间 | - | 30 | 30 |
晶体管应用 | - | SWITCHING | SWITCHING |
晶体管元件材料 | - | SILICON | SILICON |
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