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A Microchip Technology Company
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Data Sheet
SST12LP17E is a 2.4 GHz high-efficiency, fully-matched power amplifier module
based on the highly-reliable InGaP/GaAs HBT technology. It is designed in compli-
ance with IEEE 802.11b/g/n applications and typically provides 28 dB gain with 28%
power-added efficiency at 21dBm. SST12LP17E has excellent linearity, providing
3% EVM at typically 18 dBm, while meeting 802.11g spectrum mask at 21.5 dBm.
This power amplifier requires no external RF matching, and only requires one exter-
nal DC-bias capacitor to meet the specified performance. It offers high-speed
power-up/-down control through a single reference voltage pin and includes a tem-
perature-stable, VSWR insensitive power detector voltage output. SST12LP17E is
offered in a super-thin (0.4mm maximum) 8-contact X2SON package and a 8-con-
tact USON package.
Features
• Input/Output ports internally matched to 50 and
DC decoupled
– Typically 28 dB gain across 2.4–2.5 GHz
• Low shut-down current (~2 µA)
• Stable performance over temperature
• High gain:
– ~2 dB gain variation between -40°C to +85°C
– ~1 dB power variation between -40°C to +85°C
– >15 dB dynamic range, dB-wise linear
– VSWR insensitive, temperature stable
• High linear output power:
• Excellent on-chip power detection
– >24 dBm P1dB
- Single-tone measurement. Please refer to “Absolute
Maximum Stress Ratings” on page 5
– Meets 802.11g OFDM ACPR requirement up to 21.5
dBm
– ~3% added EVM up to 18 dBm for 54 Mbps 802.11g
signal
– Meets 802.11b ACPR requirement up to 22 dBm
• Packages available
– 8-contact X2SON – 2mm x 2mm x 0.4mm
– 8-contact USON – 2mm x 2mm x 0.6mm
• Non-Pb (lead-free), RoHS compliant, and Halogen free
• High power-added efficiency/Low operating cur-
rent for both 802.11b/g/n applications
– ~28%/138 mA @ P
OUT
= 21.5 dBm for 802.11g
– ~33%/155 mA @ P
OUT
= 22.5 dBm for 802.11b
– I
REF
<2 mA
Applications
• Home RF
• Single-pin low I
REF
power-up/down control
• Low idle current
– ~60 mA I
CQ
• WLAN (IEEE 802.11b/g/n)
• Cordless phones
• High-speed power-up/down
• 2.4 GHz ISM wireless equipment
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
©2012 Silicon Storage Technology, Inc.
www.microchip.com
DS-75004E
07/12
PR
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RI
CO
ET
NF AR
ID
YA
EN
ND
TIA
L
A Microchip Technology Company
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Data Sheet
Product Description
The SST12LP17E is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT tech-
nology.The input/output RF ports are fully matched to 50internally. These RF ports are DC decoupled and
require no DC-blocking capacitors or matching components. This helps reduce the system board’s Bill of Materi-
als (BOM) cost.
The SST12LP17E is a 2.4 GHz fully-integrated, high-efficiency Power Amplifier module designed in
compliance with IEEE 802.11b/g/n applications. It typically provides 28 dB gain with 28% power-added
efficiency (PAE) @ POUT = 21.5 dBm for 802.11g and 33% PAE @ POUT = 22 dBm for 802.11b.
The SST12LP17E has excellent linearity, typically ~3% added EVM at 18 dBm output power which is essential
for 54 Mbps 802.11g/n operation while meeting 802.11g spectrum mask at 21.5 dBm and 802.11b spectrum
mask at 22.5 dBm.
The SST12LP17E also features easy board-level usage along with high-speed power-up/down control through
a single combined reference voltage pin. Ultra-low reference current (total I
REF
~2 mA) makes the SST12LP17E
controllable by an on/off switching signal directly from the baseband chip. These features, coupled with low
operating current, make the SST12LP17E ideal for the final stage power amplification in battery-powered
802.11b/g/n WLAN transmitter applications.
The SST12LP17E has an excellent on-chip, single-ended power detector, which features wide dynamic-range,
>15 dB, with dB-wise linear performance. The excellent on-chip power detector provides a reliable solution
to board-level power control.
The SST12LP17E is offered in both 8-contact X2SON and 8-contact USON packages. See Figure 2 for pin
assignments and Table 1 for pin descriptions.
©2012 Silicon Storage Technology, Inc.
DS-75004E
07/12
2
PR
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CO
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NF AR
ID
YA
EN
ND
TIA
L
A Microchip Technology Company
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Data Sheet
Functional Blocks
VCC2
1
8
DNU
VCC1
2
7
DNU
RFIN
3
6
RFOUT
VREF
4
5
DET
Bias Circuit
1426 F1.0
Figure 1:
Functional Block Diagram
©2012 Silicon Storage Technology, Inc.
DS-75004E
07/12
3
PR
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CO
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NF AR
ID
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EN
ND
TIA
L
A Microchip Technology Company
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Data Sheet
Pin Assignments
VCC2
1
8
DNU
Top View
VCC1
2
(Contacts
facing down)
RF & DC
Ground
0
7
DNU
RFIN
3
6
RFOUT
VREF
4
5
DET
1426 F2.0
Figure 2:
Pin Assignments for 8-contact X2SON and 8-contact USON
Pin Descriptions
Table 1:
Pin Description
Symbol
Pin No.
0
1
GND
Pin Name
Type
1
PWR
I
Function
Ground
Low inductance ground pad
VCC2
RFIN
Power Supply
Power supply, 2
nd
stage
Power supply, 1
st
stage
VCC1
2
Power Supply
PWR
3
4
RF input, DC decoupled
VREF
PWR
O
O
1
st
and 2
nd
stage idle current control
DET
5
On-chip power detector
RFOUT
DNU
DNU
6
7
8
RF output, DC decoupled
Do not use or connect
Do not use or connect
Do Not Use
Do Not Use
T1.0 75004
1. I=Input, O=Output
©2012 Silicon Storage Technology, Inc.
DS-75004E
07/12
4
PR
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CO
ET
NF AR
ID
YA
EN
ND
TIA
L
A Microchip Technology Company
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Data Sheet
Electrical Specifications
The DC and RF specifications for the power amplifier are specified below. Refer to Table 3 for the DC voltage
and current specifications. Refer to Figures 3 through 8 for the RF performance.
Absolute Maximum Stress Ratings
(Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure beyond absolute maximum stress rat-
ing conditions may affect device reliability.)
Input power to pin 3 (P
IN
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power from Pin 6 (P
OUT
)
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +25.5 dBm
Supply Voltage at pins 1 and 2 (V
CC
)
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +6.0V
Reference voltage to pin 4 (V
REF
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V
DC supply current (I
CC
)
3
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the max-
imum rating of average output power could cause permanent damage to the device.
2. V
CC
maximum rating of 6.0V for RF output power levels up to 10 dBm.
3. Measured with 100% duty cycle 54 Mbps 802.11g OFDM Signal
Table 2:
Operating Range
Range
Industrial
Ambient Temp
-40°C to +85°C
V
CC
3.0V to 4.6V
T2.1 75004
Table 3:
DC Electrical Characteristics at 25°C
Symbol
Parameter
V
CC
Supply Voltage at pins 1 and 2
Min.
3.0
Typ
60
Max.
4.6
Unit
V
mA
V
mA
mA
mA
T3.1 75004
3.3
I
CQ
Idle current to meet EVM ~3% @ 18 dBm Output Power, 802.11g OFDM
54 Mbps signal
Reference Voltage for pin 4
V
REG
2.9
I
CC
Current consumption to meet 802.11g OFDM 54 Mbps spectrum mask
@ 21.5 dBm
Current consumption to meet 802.11b DSSS 54 Mbps spectrum mask
@ 22 dBm
138
155
105
Current consumption to meet EVM ~3% @ 18 dBm Output Power with
802.11g OFDM 54 Mbps signal
©2012 Silicon Storage Technology, Inc.
DS-75004E
07/12
5
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