SS29, SS210
www.vishay.com
Vishay General Semiconductor
High Voltage Surface Mount Schottky Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AA (SMB)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
Package
Diode variations
1.5 A
90 V, 100 V
75 A
0.71 V
150 °C
DO-214AA (SMB)
Single
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current at t
p
= 2 μs, 1 kHz
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
RRM
dV/dt
T
J
, T
STG
SYMBOL
SS29
S9
90
63
90
1.5
75
1.0
10 000
-55 to +150
SS210
S10
100
70
100
V
V
V
A
A
A
V/μs
°C
UNIT
Revision: 23-Dec-14
Document Number: 88749
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SS29, SS210
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
I
F
= 0.1 A
I
F
= 1.0 A
T
A
= 25 °C
V
F
T
A
= 100 °C
T
A
= 25 °C
T
A
= 100 °C
I
R
SYMBOL
SS29
0.43
0.75
0.95
0.71
0.85
30
5
μA
mA
V
SS210
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
(1)
I
F
= 3.0 A
I
F
= 1.5 A
I
F
= 3.0 A
Maximum DC reverse current at rated V
R (1)
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum thermal resistance
(1)
Note
PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
SYMBOL
R
JA
R
JL
SS29
85
25
SS210
UNIT
°C/W
(1)
ORDERING INFORMATION
(Example)
PREFERRED P/N
SS210-E3/52T
SS210-E3/5BT
SS210HE3/52T
(1)
SS210HE3/5BT
(1)
SS210HE3_A/H
(1)
UNIT WEIGHT (g)
0.096
0.096
0.096
0.096
0.096
0.096
PREFERRED PACKAGE CODE
52T
5BT
52T
5BT
H
I
BASE QUANTITY
750
3200
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
SS210HE3_A/I
(1)
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
C
unless otherwise noted)
2.0
Resistive or Inductive Load
2.5
D = 0.8
Average Forward Current (A)
1.5
Average Power Loss (W)
2.0
D = 0.3
1.5
D = 0.2
D = 0.1
1.0
D = 0.5
D = 1.0
1.0
T
0.5
D = t
p
/T
0
t
p
3.2
3.6
0.5
PCB Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0
0
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
Lead Temperature (°C)
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 23-Dec-14
Document Number: 88749
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SS29, SS210
www.vishay.com
Vishay General Semiconductor
10 000
100
Instantaneous Reverse Current (µA)
Peak Forward Surge Current (A)
T
J
= 150 °C
1000
T
J
= 125 °C
75
100
50
10
T
J
= 25 °C
25
1
0
1
10
100
0.1
10
20
30
40
50
60
70
80
90
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Reverse Leakage Characteristics
100
1000
T
J
= 150 °C
T
J
= 125 °C
Instantaneous Forward Current (A)
10
Junction Capacitance (pF)
100
T
J
= 25 °C
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
MIN.
0.220 REF.
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
Revision: 23-Dec-14
Document Number: 88749
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000