VS-26MT.., VS-36MT.. Series
www.vishay.com
Vishay Semiconductors
Three Phase Bridge (Power Modules), 25 A to 35 A
FEATURES
• Universal, 3 way terminals: push-on, wrap
around or solder
• High thermal conductivity package, electrically
insulated case
• Center hole fixing
• Excellent power/volume ratio
• UL E300359 approved
• Nickel plated terminals solderable using lead (Pb)-free
solder; solder alloy Sn/Ag/Cu (SAC305); solder
temperature 260 °C to 275 °C
• Designed and qualified for industrial and consumer level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D-63
PRIMARY CHARACTERISTICS
I
O
V
RRM
Package
Circuit configuration
25 A to 35 A
50 V to 1600 V
D-63
Three phase bridge
DESCRIPTION
A range of extremely compact, encapsulated three phase
bridge rectifiers offering efficient and reliable operation.
They are intended for use in general purpose and
instrumentation applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
O
I
FSM
I
2
t
V
RRM
T
J
CHARACTERISTICS
VALUES
26MT..
25
T
C
50 Hz
60 Hz
50 Hz
60 Hz
70
360
375
635
580
50 to 1600
-55 to +150
VALUES
36MT..
35
60
475
500
1130
1030
UNITS
A
°C
A
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
05
10
20
40
VS-26MT..
VS-36MT..
60
80
100
120
140
160
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
50
100
200
400
600
800
1000
1200
1400
1600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
75
150
275
500
725
900
1100
1300
1500
1700
2
I
RRM
MAXIMUM
AT T
J
MAXIMUM
mA
Revision: 05-Sep-17
Document Number: 93565
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-26MT.., VS-36MT.. Series
www.vishay.com
Vishay Semiconductors
VALUES
26MT..
25
70
360
375
300
Initial
T
J
= T
J
maximum
314
635
580
450
410
6360
0.88
1.13
7.9
5.2
1.26
100
2700
VALUES
36MT..
35
60
475
500
400
420
1130
1030
800
730
11 300
0.86
1.03
6.3
5.0
1.19
A
2
s
V
m
V
µA
V
A
2
s
A
FORWARD CONDUCTION
PARAMETER
Maximum DC output current at T
C
SYMBOL
I
O
TEST CONDITIONS
120° rect. conduction angle
t = 10 ms
Maximum peak, one-cycle
non-repetitive forward current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I
2
t
for fusing
I
2
t
V
F(TO)1
V
F(TO)2
r
t1
r
t2
V
FM
I
RRM
V
INS
I
2
t
for time t
x
=
Low level of threshold voltage
High level of threshold voltage
Low level forward slope resistance
High level forward slope resistance
Maximum forward voltage drop
Maximum DC reverse current
RMS isolation voltage
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
I
2
t
x
t
x
; 0.1
t
x
10 ms, V
RRM
= 0 V
UNITS
A
°C
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
maximum
(I >
x I
F(AV)
), T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
maximum
(I >
x I
F(AV)
), T
J
maximum
T
J
= 25 °C, I
FM
= 40 Apk - per single junction
T
J
= 25 °C, per junction at rated V
RRM
T
J
= 25 °C, all terminal shorted; f = 50 Hz, t = 1 s
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Approximate weight
Mounting torque ± 10 %
Bridge to heatsink with screw M4
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation per bridge
(based on total power loss of bridge)
Mounting surface, smooth, flat and greased
TEST CONDITIONS
VALUES
26MT
VALUES
36MT
UNITS
°C
-55 to +150
1.42
0.2
20
2.0
1.35
K/W
0.2
g
Nm
26MT.. Series
Instantaneous Forward Current (A)
160
1000
Maximum Allowable
Case Temperature (°C)
140
26MT.. Series
100
120
100
+
Per junction
10
T
J
= 25 °C
T
J
= 150 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
120° (rect.)
80
~
-
60
0
5
10
15
20
25
30
Total Output Current (A)
Fig. 1 - Current Ratings Characteristics
Instantaneous Forward Voltage (V)
Fig. 2 - Forward Voltage Drop Characteristics
Revision: 05-Sep-17
Document Number: 93565
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-26MT.., VS-36MT.. Series
www.vishay.com
Vishay Semiconductors
55
55
Maximum Total Power Loss (W)
50
45
40
35
30
25
20
15
10
5
0
0
26MT.. Series
T
J
= 150 °C
Maximum Total Power Loss (W)
50
45
40
35
30
25
20
15
10
5
0
0
1
R
th
SA
K/
W
=
7
0.
2K
3K
K/
/
W
W
R
-
Δ
120° (rect.)
/
W
4K
/
W
5K
/
W
7 K/
W
10 K/
W
5
10
20
25
25
50
75
100
125
150
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Total Power Loss Characteristics
320
300
280
At any rated load condition and
with
rated
V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
150
36MT.. Series
260
240
220
200
180
160
140
120
100
80
1
Maximum Allowable
Case Temperature (°C)
Peak Half Sine Wave
Forward Current (A)
130
110
90
+
~
-
120° (rect.)
70
26MT.. Series
50
10
100
0
5
10
15
20
25
30
35
40
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
Total Output Current (A)
Fig. 6 - Current Ratings Characteristics
360
Peak Half Sine Wave
Forward Current (A)
320
280
240
200
160
120
Maximum non-repetitive surge current
versus
pulse train duration.
Initial T
J
= 150 °C
No voltage
reapplied
Rated
V
RRM
reapplied
Instantaneous Forward Current (A)
400
1000
36MT.. Series
100
Per junction
10
T
J
= 25 °C
T
J
= 150 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
26MT.. Series
80
0.01
0.1
1
Pulse Drain Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 05-Sep-17
Document Number: 93565
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-26MT.., VS-36MT.. Series
www.vishay.com
Vishay Semiconductors
80
80
Maximum Total Power Loss (W)
70
60
50
36MT.. Series
T
J
= 150 °C
Maximum Total Power Loss (W)
70
60
50
40
30
20
10
0
1K
R
th
SA
=
0.
7
/
W
K/
W
120° (rect.)
40
30
20
10
0
0
5
10
15
20
25
30
35
/
W
3K
/
W
4 K/
W
5 K/
W
7 K/
W
10 K/W
0
25
50
75
100
125
150
2K
-
Δ
R
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Total Power Loss Characteristics
450
400
At any rated load condition and
with
rated
V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
500
450
Maximum non-repetitive surge current
versus
pulse train duration.
Initial T
J
= 150 °C
No voltage
reapplied
Rated
V
RRM
reapplied
Peak Half Sine Wave
Forward Current (A)
Peak Half Sine Wave
Forward Current (A)
350
300
250
200
150
400
350
300
250
200
150
36MT.. Series
100
1
10
100
36MT.. Series
100
0.01
0.1
1
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
Pulse Drain Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
10
Z
thJC
- Transient Thermal
Impedance (K/W)
1
Steady state
value:
R
thJC
= 1.42 K/W
(DC operation)
0.1
26MT.. Series
per
bridge
0.01
.
0.001
0.001
.
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 11 - Thermal Impedance Z
thJC
Characteristics
Revision: 05-Sep-17
Document Number: 93565
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-26MT.., VS-36MT.. Series
www.vishay.com
Vishay Semiconductors
10
Z
thJC
- Transient Thermal
Impedance (K/W)
1
Steady state
value:
R
thJC
= 1.35 K/W
(DC operation)
0.1
36MT.. Series
per
bridge
0.01
.
0.001
0.001
.
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 12 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
1
36
2
-
-
-
-
MT
3
160
4
1
2
3
4
Vishay Semiconductors product
Current rating code
Basic part number
Voltage code x 10 = V
RRM
26 = 25 A (average)
36 = 35 A (average)
CIRCUIT CONFIGURATION
+
~
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95251
Revision: 05-Sep-17
Document Number: 93565
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
