MC14106B
Hex Schmitt Trigger
The MC14106B hex Schmitt Trigger is constructed with MOS
P−channel and N−channel enhancement mode devices in a single
monolithic structure. These devices find primary use where low power
dissipation and/or high noise immunity is desired. The MC14106B
may be used in place of the MC14069UB hex inverter for enhanced
noise immunity or to “square up” slowly changing waveforms.
This device contains protection circuitry to guard against damage
due to high static voltages or electric fields. However, precautions
must be taken to avoid applications of any voltage higher than
maximum rated voltages to this high−impedance circuit. For proper
operation, V
in
and V
out
should be constrained to the range V
SS
≤
(V
in
or V
out
)
≤
V
DD
.
Unused inputs must always be tied to an appropriate logic voltage
level (e.g., either V
SS
or V
DD
). Unused outputs must be left open.
Features
http://onsemi.com
SOIC−14 NB
D SUFFIX
CASE 751A
TSSOP−14
DT SUFFIX
CASE 948G
MARKING DIAGRAMS
14
14106BG
AWLYWW
1
SOIC−14 NB
14
14
106B
ALYWG
G
1
TSSOP−14
•
Increased Hysteresis Voltage Over the MC14584B
•
Supply Voltage Range = 3.0 Vdc to 18 Vdc
•
Capable of Driving Two Low−power TTL Loads or One
•
•
•
•
Low−power Schottky TTL Load Over the Rated Temperature
Range
Pin−for−Pin Replacement for CD40106B and MM74C14
Can Be Used to Replace the MC14584B or MC14069UB
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(Voltages Referenced to V
SS
)
Symbol
V
DD
V
in
, V
out
I
in
, I
out
P
D
T
A
T
stg
T
L
Parameter
DC Supply Voltage Range
Input or Output Voltage Range
(DC or Transient)
Input or Output Current
(DC or Transient) per Pin
Power Dissipation, per Package
(Note 1)
Ambient Temperature Range
Storage Temperature Range
Lead Temperature
(8−Second Soldering)
Value
−0.5 to +18.0
−0.5 to V
DD
+ 0.5
±
10
500
−55 to +125
−65 to +150
260
Unit
V
V
mA
A
WL, L
YY, Y
WW, W
G or
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
mW
°C
°C
°C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Temperature Derating: “D/DW” Packages: –7.0 mW/°C From 65°C To 125°C
©
Semiconductor Components Industries, LLC, 2014
1
August, 2014 − Rev. 10
Publication Order Number:
MC14106B/D
MC14106B
ELECTRICAL CHARACTERISTICS
(Voltages Referenced to V
SS
)
−55°C
Characteristic
Output Voltage
V
in
= V
DD
“0” Level
Symbol
V
OL
V
DD
Vdc
5.0
10
15
5.0
10
15
5.0
10
15
5.0
10
15
5.0
10
15
5.0
5.0
10
15
I
OL
5.0
10
15
15
−
5.0
10
15
5.0
10
15
Min
−
−
−
4.95
9.95
14.95
0.3
1.2
1.6
2.2
4.6
6.8
0.9
2.5
4.0
–3.0
–0.64
–1.6
–4.2
0.64
1.6
4.2
−
−
−
−
−
Max
0.05
0.05
0.05
−
−
−
2.0
3.4
5.0
3.6
7.1
10.8
2.8
5.2
7.4
−
−
−
−
−
−
−
±0.1
−
0.25
0.5
1.0
Min
−
−
−
4.95
9.95
14.95
0.3
1.2
1.6
2.2
4.6
6.8
0.9
2.5
4.0
–2.4
–0.51
–1.3
–3.4
0.51
1.3
3.4
−
−
−
−
−
25°C
Typ
(Note 2)
0
0
0
5.0
10
15
1.1
1.7
2.1
2.9
5.9
8.8
1.9
3.9
5.8
–4.2
–0.88
–2.25
–8.8
0.88
2.25
8.8
±
0.00001
5.0
0.0005
0.0010
0.0015
Max
0.05
0.05
0.05
−
−
−
2.0
3.4
5.0
3.6
7.1
10.8
2.8
5.2
7.4
−
−
−
−
−
−
−
±0.1
7.5
0.25
0.5
1.0
125°C
Min
−
−
−
4.95
9.95
14.95
0.3
1.2
1.6
2.2
4.6
6.8
0.9
2.5
4.0
–1.7
–0.36
–0.9
–2.4
0.36
0.9
2.4
−
−
−
−
−
Max
0.05
0.05
0.05
−
−
−
2.0
3.4
5.0
3.6
7.1
10.8
2.8
5.2
7.4
−
−
−
−
−
−
−
±1.0
−
7.5
15
30
mAdc
Unit
Vdc
“1” Level
V
in
= 0
Hysteresis Voltage
V
OH
Vdc
V
H (5)
Vdc
Threshold Voltage
Positive−Going
V
T+
Vdc
Negative−Going
V
T–
Vdc
Output Drive Current
(V
OH
= 2.5 Vdc)
(V
OH
= 4.6 Vdc)
(V
OH
= 9.5 Vdc)
(V
OH
= 13.5 Vdc)
(V
OL
= 0.4 Vdc)
(V
OL
= 0.5 Vdc)
(V
OL
= 1.5 Vdc)
Input Current
Input Capacitance
(V
in
= 0)
Quiescent Current
(Per Package)
I
OH
Source
mAdc
Sink
I
in
C
in
I
DD
mAdc
pF
mAdc
Total Supply Current (Notes 3 & 4)
(Dynamic plus Quiescent,
Per Package)
(C
L
= 50 pF on all outputs, all
buffers switching)
I
T
I
T
= (1.8
mA/kHz)
f + I
DD
I
T
= (3.6
mA/kHz)
f + I
DD
I
T
= (5.4
mA/kHz)
f + I
DD
mAdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
3. The formulas given are for the typical characteristics only at 25°C.
4. To calculate total supply current at loads other than 50 pF:
I
T
(C
L
) = I
T
(50 pF) + (C
L
– 50) Vfk where I
T
is in
mA
(per package), C
L
in pF, V = (V
DD
– V
SS
) in volts, f in kHz is input frequency, and
k = 0.001.
5. V
H =
V
T+
– V
T–
(But maximum variation of V
H
is specified as less that V
T+ max
– V
T– min
).
http://onsemi.com
3
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
