VS-ETU3006S-M3, VS-ETU3006-1-M3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 30 A FRED Pt
®
FEATURES
• Low forward voltage drop
• Ultrafast recovery time
• 175 °C operating junction temperature
2
1
3
1
2
3
• Low leakage current
• Designed and qualified
JEDEC
®
-JESD 47
according
to
D
2
PAK (TO-263AB)
Base
cathode
2
TO-262AA
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
2
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
1
N/C
3
Anode
1
N/C
3
Anode
D
2
PAK
TO-262
Ultralow V
F
, soft-switching ultrafast rectifiers optimized for
Discontinuous (Critical) Mode (DCM) Power Factor
Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Package
Circuit configuration
30 A
600 V
1.15 V
30 ns
175 °C
D
2
PAK (TO-263AB), TO-262AA
Single
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units, and DVD AC/DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 113 °C
T
C
= 25 °C
TEST CONDITIONS
MAX.
600
30
200
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
Series inductance
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 30 A
I
F
= 30 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
1.4
1.15
0.02
30
20
8.0
MAX.
-
2.0
1.35
30
250
-
-
μA
pF
nH
V
UNITS
Revision: 26-Oct-17
Document Number: 93592
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETU3006S-M3, VS-ETU3006-1-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
Reverse recovery charge
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
MIN.
-
-
-
-
-
-
-
TYP.
30
45
100
5.6
10
127
580
MAX.
45
-
-
-
-
-
-
A
nC
ns
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction-to-case
Thermal resistance,
junction-to-ambient
Thermal resistance,
case-to-heatsink
Weight
Mounting torque
Marking device
Case style D
2
PAK (TO-263AB)
Case style TO-262AA
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth, and greased
TEST CONDITIONS
MIN.
-65
-
-
-
-
-
6
(5)
TYP.
-
0.95
-
0.5
2.0
0.07
-
MAX.
175
1.4
70
-
-
-
12
(10)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
°C/W
ETU3006S
ETU3006-1
I
F
- Instantaneous Forward Current (A)
1000
1000
I
R
- Reverse Current (μA)
100
10
1
0.1
0.01
0.001
175°C
150°C
125°C
100°C
75°C
50°C
25°C
100
T
J
= 175 °C
10
T
J
= 150 °C
T
J
= 25 °C
1
0.0
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
500
600
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 26-Oct-17
Document Number: 93592
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETU3006S-M3, VS-ETU3006-1-M3
www.vishay.com
Vishay Semiconductors
1000
C
T
- Junction Capacitance (pF)
100
10
1
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Z
thJC
- Thermal Impedance (°C/W)
1
D = 0.5
D = 0.2
D = 0.1
0.1
D = 0.05
D = 0.02
D = 0.01
Single
Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-0
1E+00
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
Allowable Case Temperature (°C)
180
60
160
150
140
130
120
110
100
90
0
5
10
15
20
25
30
35
40
45
DC
Average Power Loss (W)
170
50
40
30
20
10
0
0
5
10
15
20
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
25
30
35
40
45
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 26-Oct-17
Document Number: 93592
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETU3006S-M3, VS-ETU3006-1-M3
www.vishay.com
Vishay Semiconductors
1800
1600
1400
130
120
110
100
90
80
I
F
= 30 A, 125 °C
1200
I
F
= 30 A, 125 °C
Q
rr
(nC)
I
F
= 30 A, 25 °C
t
rr
(ns)
70
60
50
40
30
20
10
100
1000
typical value
1000
800
600
400
200
0
100
I
F
= 30 A, 25 °C
typical value
1000
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery vs. dI
F
/dt
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 26-Oct-17
Document Number: 93592
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETU3006S-M3, VS-ETU3006-1-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
-
-
-
-
-
E
2
T
3
U
4
30
5
06
6
S
7
TRL -M3
8
9
Vishay Semiconductors product
Circuit configuration
E = single
T = TO-220
U = ultrafast recovery time
Current code (30 = 30 A)
6
7
8
-
-
-
-
-
-
Voltage code (06 = 600 V)
• S = D
2
PAK (TO-263AB)
• -1 = TO-262AA
• None = tube (50 pieces)
• TRL = tape and reel (left oriented, for D
2
PAK (TO-263AB) package)
• TRR = tape and reel (right oriented, for D
2
PAK (TO-263AB) package)
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
9
-
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-ETU3006S-M3
VS-ETU3006-1-M3
VS-ETU3006STRR-M3
VS-ETU3006STRL-M3
QUANTITY PER TUBE
50
50
800
800
MINIMUM ORDER QUANTITY
1000
1000
800
800
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
D
2
PAK
D
2
PAK
(TO-263AB)
(TO-263AB)
www.vishay.com/doc?96164
www.vishay.com/doc?96165
www.vishay.com/doc?95444
www.vishay.com/doc?95443
www.vishay.com/doc?95032
www.vishay.com/doc?96438
TO-262AA
TO-262AA
D
2
PAK (TO-263AB)
Revision: 26-Oct-17
Document Number: 93592
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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