IRFB41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
IRFSL41N15DPbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
I
D
D
D
Applications
High frequency DC-DC converters
Benefits
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See App.
Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Lead-Free
150V
0.045
41A
S
D
G
TO-220AB
IRFB41N15DPbF
S
D
G
TO-220 Full-Pak
IRFB41N15DPbF
S
G
D2 Pak
IRFS41N15DPbF
G
S
D
TO-262 Pak
IRFSL41N15DPbF
G
Gate
Base part number
IRFB41N15DPbF
IRFSL41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
Package Type
TO-220
TO-262
TO-220 Full-Pak
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Parameter
D
Drain
S
Source
Orderable Part Number
IRFB41N15DPbF
IRFSL41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
IRFS41N15DTRLPbF
Max.
41
29
164
3.1
200
48
1.3
0.32
± 30
2.7
°C
A
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
P
D
@T
C
= 25°C
Units
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation D2-Pak
Maximum Power Dissipation TO-220
Maximum Power Dissipation TO-220 Full-Pak
Linear Derating FactorTO-220
Linear Derating FactorTO-220 Full-Pak
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 175
300
10 lbf•in (1.1N•m)
Thermal Resistance
Symbol
R
JC
R
JC
R
CS
R
JA
R
JA
R
JA
Parameter
Junction-to-Case
Junction-to-Case, TO-220 Full-Pak
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient,TO-220
Junction-to-Ambient,D2-Pak
Junction-to-Ambient, TO-220 Full-Pak
Typ.
–––
–––
0.50
–––
–––
–––
Max.
0.75
3.14
–––
62
40
65
Units
°C/W
1
2017-04-27
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
150
–––
–––
3.0
–––
–––
–––
–––
18
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
IRFB/IB/S/SL41N15DPbF
Typ. Max. Units
Conditions
–––
–––
V V
GS
= 0V, I
D
= 250µA
0.17 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 0.045
V
GS
= 10V, I
D
= 25A
–––
5.5
V V
DS
= V
GS
, I
D
= 250µA
–––
25
V
DS
= 150 V, V
GS
= 0V
µA
–––
250
V
DS
= 120V,V
GS
= 0V,T
J
=150°C
–––
100
V
GS
= 30V
nA
-100
V
GS
= -30V
–––
72
21
35
16
63
25
14
2520
510
110
3090
230
250
–––
110
31
52
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS
= 50V, I
D
= 25A
I
D
= 25A
nC
V
DS
= 120V
V
GS
= 10V
V
DD
= 75V
I
D
= 25A
ns
R
G
= 2.5
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
pF
V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 120V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 120V
Typ.
–––
–––
–––
Max.
470
25
20
Units
mJ
A
mJ
S
Dynamic @ T
J
= 25°C (unless otherwise specified)
gfs
Forward Trans conductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
C
oss
Output Capacitance
C
oss eff.
Effective Output Capacitance
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Notes:
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
170
1.3
Max. Units
41
164
1.3
260
1.9
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 25A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= 25A
C
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by max. junction temperature.
starting T
J
= 25°C, L = 1.5mH, R
G
= 25, I
AS
= 25A.
I
SD
25A,
di/dt
340A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
300µs;
duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
This is only applied to TO-220AB package.
This is applied to D
2
Pak, when mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
2
2017-04-27
IRFB/IB/S/SL41N15DPbF
1000
TOP
100
BOTTOM
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
1000
TOP
100
BOTTOM
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
10
10
6.0V
6.0V
1
0.1
1
20µs PULSE WIDTH
T
J
= 25
°
C
10
100
V
DS
, Drain-to-Source Voltage (V)
1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 41A
I
D
, Drain-to-Source Current (A)
2.5
100
2.0
T
J
= 175
°
C
1.5
10
T
J
= 25
°
C
1.0
0.5
1
V DS= 25V
20µs PULSE WIDTH
6
7
8
9
10
11
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Normalized On-Resistance
vs. Temperature
2017-04-27
3
IRFB/IB/S/SL41N15DPbF
100000
20
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
I
D
= 25A
V
DS
= 120V
V
DS
= 75V
V
DS
= 30V
SHORTED
16
10000
C, Capacitance(pF)
Ciss
1000
12
Coss
100
8
Crss
4
10
1
10
100
1000
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
20
40
60
80
100
120
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
SD
, Reverse Drain Current (A)
I
D
, Drain Current (A)
100
T
J
= 175
°
C
100
10us
10
100us
10
T = 25
°
C
J
1
1ms
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
1
T
C
= 25 °C
T
J
= 175 °C
Single Pulse
1
10
100
10ms
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2017-04-27
IRFB/IB/S/SL41N15DPbF
50
40
I
D
, Drain Current (A)
30
20
Fig 10a.
Switching Time Test Circuit
10
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( ° C)
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
P
DM
t
1
t
2
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2017-04-27
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
