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ISL6208BCRZ-T

产品描述Gate Drivers VER OF ISL6208CR COS T IMPROVEMENT IBM
产品类别模拟混合信号IC    驱动程序和接口   
文件大小1MB,共13页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
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ISL6208BCRZ-T概述

Gate Drivers VER OF ISL6208CR COS T IMPROVEMENT IBM

ISL6208BCRZ-T规格参数

参数名称属性值
Brand NameIntersil
厂商名称Renesas(瑞萨电子)
零件包装代码DFN
包装说明HVSON, SOLCC8,.08,20
针数8
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time13 weeks
高边驱动器YES
接口集成电路类型HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码S-PDSO-N8
JESD-609代码e3
长度2 mm
湿度敏感等级3
功能数量1
端子数量8
最高工作温度100 °C
最低工作温度-10 °C
标称输出峰值电流4 A
封装主体材料PLASTIC/EPOXY
封装代码HVSON
封装等效代码SOLCC8,.08,20
封装形状SQUARE
封装形式SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度)NOT SPECIFIED
电源5 V
认证状态Not Qualified
座面最大高度1 mm
最大供电电压5.5 V
最小供电电压4.5 V
标称供电电压5 V
表面贴装YES
温度等级OTHER
端子面层Matte Tin (Sn) - annealed
端子形式NO LEAD
端子节距0.5 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
接通时间0.03 µs
宽度2 mm

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DATASHEET
ISL6208, ISL6208B
High Voltage Synchronous Rectified Buck MOSFET Drivers
The ISL6208 and ISL6208B are high frequency, dual MOSFET
drivers, optimized to drive two N-Channel power MOSFETs in a
synchronous-rectified buck converter topology. They are
especially suited for mobile computing applications that
require high efficiency and excellent thermal performance.
These drivers, combined with an Intersil multiphase Buck
PWM controller, form a complete single-stage core-voltage
regulator solution for advanced mobile microprocessors.
ISL6208 and ISL6208B have the same function but different
packages. The descriptions in this datasheet are based on
ISL6208 and also apply to ISL6208B.
The ISL6208 features 4A typical sinking current for the lower
gate driver. This current is capable of holding the lower
MOSFET gate off during the rising edge of the Phase node. This
prevents shoot-through power loss caused by the high dv/dt of
phase voltages. The operating voltage matches the 30V
breakdown voltage of the MOSFETs commonly used in mobile
computer power supplies.
The ISL6208 also features a three-state PWM input that,
working together with Intersil’s multiphase PWM controllers,
will prevent negative voltage output during CPU shutdown. This
feature eliminates a protective Schottky diode usually seen in
a microprocessor power systems.
MOSFET gates can be efficiently switched up to 2MHz using
the ISL6208. Each driver is capable of driving a 3000pF load
with propagation delays of 8ns and transition times under
10ns. Bootstrapping is implemented with an internal Schottky
diode. This reduces system cost and complexity, while allowing
the use of higher performance MOSFETs. Adaptive
shoot-through protection is integrated to prevent both
MOSFETs from conducting simultaneously.
A diode emulation feature is integrated in the ISL6208 to
enhance converter efficiency at light load conditions. This
feature also allows for monotonic start-up into pre-biased
outputs. When diode emulation is enabled, the driver will allow
discontinuous conduction mode by detecting when the
inductor current reaches zero and subsequently turning off the
low side MOSFET gate.
FN9115
Rev 7.00
July 14, 2014
Features
• Dual MOSFET drives for synchronous rectified bridge
• Adaptive shoot-through protection
• 0.5 On-resistance and 4A sink current capability
• Supports high switching frequency up to 2MHz
- Fast output rise and fall time
- Low propagation delay
• Three-state PWM input for power stage shutdown
• Internal bootstrap schottky diode
• Low bias supply current (5V, 80µA)
• Diode emulation for enhanced light load efficiency and pre-
biased start-up applications
• VCC POR (power-on-reset) feature integrated
• Low three-state shutdown holdoff time (typical 160ns)
• Pin-to-pin compatible with ISL6207
• QFN and DFN package:
- Compliant to JEDEC PUB95 MO-220
QFN - Quad flat no leads - package outline
DFN - Dual flat no leads - package outline
- Near chip scale package footprint, which improves PCB
efficiency and has a thinner profile
• Pb-free (RoHS compliant)
Applications
• Core voltage supplies for Intel® and AMD® mobile
microprocessors
• High frequency low profile DC/DC converters
• High current low output voltage DC/DC converters
• High input voltage DC/DC converters
Related Literature
• Technical Brief
TB363
“Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
• Technical Brief
TB389
“PCB Land Pattern Design and
Surface Mount Guidelines for MLFP Packages”
• Technical Brief
TB447
“Guidelines for Preventing
Boot-to-Phase Stress on Half-Bridge MOSFET Driver ICs”
FN9115 Rev 7.00
July 14, 2014
Page 1 of 13

ISL6208BCRZ-T相似产品对比

ISL6208BCRZ-T
描述 Gate Drivers VER OF ISL6208CR COS T IMPROVEMENT IBM
Brand Name Intersil
厂商名称 Renesas(瑞萨电子)
零件包装代码 DFN
包装说明 HVSON, SOLCC8,.08,20
针数 8
Reach Compliance Code compliant
ECCN代码 EAR99
Factory Lead Time 13 weeks
高边驱动器 YES
接口集成电路类型 HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码 S-PDSO-N8
JESD-609代码 e3
长度 2 mm
湿度敏感等级 3
功能数量 1
端子数量 8
最高工作温度 100 °C
最低工作温度 -10 °C
标称输出峰值电流 4 A
封装主体材料 PLASTIC/EPOXY
封装代码 HVSON
封装等效代码 SOLCC8,.08,20
封装形状 SQUARE
封装形式 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度) NOT SPECIFIED
电源 5 V
认证状态 Not Qualified
座面最大高度 1 mm
最大供电电压 5.5 V
最小供电电压 4.5 V
标称供电电压 5 V
表面贴装 YES
温度等级 OTHER
端子面层 Matte Tin (Sn) - annealed
端子形式 NO LEAD
端子节距 0.5 mm
端子位置 DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED
接通时间 0.03 µs
宽度 2 mm
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