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PTF140451E V1: 产品描述RF MOSFET Transistors RFP-LDMOS GLDMOS3&7; 产品类别半导体分立半导体; 文件大小96KB，共10页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/; 标准

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PTF140451E V1概述

RF MOSFET Transistors RFP-LDMOS GLDMOS3&7

PTF140451E V1规格参数

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	Infineon(英飞凌)
产品种类 Product Category	RF MOSFET Transistors
RoHS	Details
Transistor Polarity	N-Channel
Id - Continuous Drain Current	550 mA
Vds - Drain-Source Breakdown Voltage	65 V
Rds On - Drain-Source Resistance	70 mOhms
技术 Technology	Si
Gain	18 dB
Output Power	45 W
最小工作温度 Minimum Operating Temperature	- 40 C
最大工作温度 Maximum Operating Temperature	+ 150 C
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	H-30265
系列 Packaging	Tray
Configuration	Single
高度 Height	4.11 mm
长度 Length	34.04 mm
Operating Frequency	1.45 GHz to 1.55 GHz
类型 Type	RF Power MOSFET
宽度 Width	13.72 mm
Channel Mode	Enhancement
Pd-功率耗散 Pd - Power Dissipation	175 W
工厂包装数量 Factory Pack Quantity	1
Vgs - Gate-Source Voltage	12 V

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PTF140451E

PTF140451F

Thermally-Enhanced High Power RF LDMOS FETs

45 W, 1450 – 1550 MHz

Description

The PTF140451E and PTF140451F are 45-watt,

GOLDMOS

FETs intended for DAB applications. These devices are

characterized for Digital Audio Broadcast operation in the 1450 to

1550 MHz band. Thermally-enhanced packages provide the

coolest operation available. Full gold metallization ensures

excellent device lifetime and reliability.

PTF140451E

Package 30265

PTF140451F

Package 31265

DAB Mode 2 Drive-up at 28 V

= 28 V, I

= 550 mA, ƒ = 1500 MHz

Features

•

Thermally-enhanced packages

Broadband internal matching

Typical DAB Mode 2 performance at 1500 MHz, 28 V

- Average output power = 12.5 W

- Efficiency = 27.5%

- Spectral regrowth = –30 dBc

∆

975 kHz ƒ

Typical DAB Mode 2 performance at 1500 MHz, 32 V

- Average output power = 15.5 W

- Efficiency = 27%

- Spectral regrowth = –30 dBc

∆

975 kHz ƒ

Typical CW performance, 1500 MHz, 28 V

- Output power = 60 W

- Linear gain = 18 dB

- Efficiency = 54% at P–1dB

Integrated ESD protection: Human Body Model,

Class 1 (minimum)

Excellent thermal stability, low HCI drift

Capable of handling 10:1 VSWR at 28 V, 45 W (CW)

output power

Pb-free and RoHS compliant

-22

Spectral Regrowth (dBc)

Drain Efficiency

Drain Efficiency (%)

-26

-30

-34

-38

•

Regrowth

-42

•

Output Power, avg. (dBm)

•

RF Characteristics

DAB Measurements

(not subject to production test—verified by design/characterization in Infineon test fixture)

= 28 V, I

= 550 mA, P

OUT

= 12.5 W

AVG

, ƒ = 1500 MHz, DAB Mode 2,

∆

975 kHz ƒ

Characteristic

Spectral Regrowth

Gain

Drain Efficiency

All published data at T

CASE

= 25°C unless otherwise indicated

Symbol

RGTH

p s

Min

—

Typ

–30

27.5

Max

—

Unit

dBc

*See Infineon distributor for future availability.

ESD:

Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet

1 of 9

Rev. 02, 2005-11-01

PTF140451E V1相似产品对比

	PTF140451E V1	PTF140451F-V1
描述	RF MOSFET Transistors RFP-LDMOS GLDMOS3&7	RF MOSFET Transistors RFP-LDMOS GLDMOS3&7
Product Attribute	Attribute Value	Attribute Value
制造商 Manufacturer	Infineon(英飞凌)	Infineon(英飞凌)
产品种类 Product Category	RF MOSFET Transistors	RF MOSFET Transistors
RoHS	Details	Details
Transistor Polarity	N-Channel	N-Channel
Id - Continuous Drain Current	550 mA	550 mA
Vds - Drain-Source Breakdown Voltage	65 V	65 V
技术 Technology	Si	Si
Gain	18 dB	18 dB
Output Power	45 W	45 W
最大工作温度 Maximum Operating Temperature	+ 150 C	+ 150 C
安装风格 Mounting Style	SMD/SMT	SMD/SMT
封装 / 箱体 Package / Case	H-30265	H-31265
系列 Packaging	Tray	Tray
Configuration	Single	Single
Operating Frequency	1.45 GHz to 1.55 GHz	1.45 GHz to 1.55 GHz
类型 Type	RF Power MOSFET	RF Power MOSFET
Pd-功率耗散 Pd - Power Dissipation	175 W	175 W
工厂包装数量 Factory Pack Quantity	1	1
Vgs - Gate-Source Voltage	12 V	12 V

PTF140451E V1

PTF140451E V1概述

PTF140451E V1规格参数

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PTF140451E V1相似产品对比

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