IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BUJD203AD
11 October 2016
NPN power transistor with integrated diode
Product data sheet
1. General description
High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-
parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package.
2. Features and benefits
•
•
•
•
•
Fast switching
High voltage capability
Integrated anti-parallel E-C diode
Surface mountable package
Very low switching and conduction losses
3. Applications
•
•
•
•
DC-to-DC converters
Electronic lighting ballasts
Inverters
Motor control systems
4. Pinning information
Table 1. Pinning information
Pin
1
2
3
mb
Symbol Description
B
C
E
C
base
collector[1]
emitter
mounting base; connected to
collector
1
2
3
Simplified outline
mb
Graphic symbol
C
B
E
sym131
DPAK (SOT428)
[1]
it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package
WeEn Semiconductors
BUJD203AD
NPN power transistor with integrated diode
5. Ordering information
Table 2. Ordering information
Type number
BUJD203AD
Package
Name
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
BUJD203AD
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
11 October 2016
2 / 13
WeEn Semiconductors
BUJD203AD
NPN power transistor with integrated diode
6. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CESM
V
CBO
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
10
I
C
(A)
8
I
Bon
V
BB
L
B
DUT
001aab999
Parameter
collector-emitter peak
voltage
collector-base voltage
collector-emitter voltage
collector current
peak collector current
base current
peak base current
total power dissipation
storage temperature
junction temperature
Conditions
V
BE
= 0 V
I
E
= 0 A
I
B
= 0 A
DC;
Fig. 1; Fig. 2; Fig. 3
Fig. 1; Fig. 2; Fig. 3
DC
T
mb
≤ 25 °C;
Fig. 4
Min
-
-
-
-
-
-
-
-
-65
-
Max
850
850
425
4
8
2
4
80
150
150
Unit
V
V
V
A
A
A
A
W
°C
°C
001aac000
V
CC
L
C
V
CL(CE)
probe point
6
4
2
Fig. 2. Test circuit for reverse bias safe operating area
0
0
200
400
600
800
1000
V
CEclamp
(V)
Fig. 1. Reverse bias safe operating area
BUJD203AD
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©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
11 October 2016
3 / 13
WeEn Semiconductors
BUJD203AD
NPN power transistor with integrated diode
10
2
I
C
(A)
10
I
CM(max)
I
C(max)
1
(1)
001aac001
duty cycle = 0.01
II
(3)
t
p
= 20 µs
50 µs
100 µs
200 µs
500 µs
DC
(2)
10
- 1
I
(3)
10
- 2
III
(3)
10
- 3
1
10
10
2
10
3
V
CEclamp
(V)
1)Ptot maximum and Ptot peak maximum lines
2)Second breakdown limits
3) I = Region of permissable DC operation
II = Extension for repetitive pulse operation
III = Extension during turn-on in single transistor converters
provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs
Fig. 3. Forward bias safe operating area for Tmb ≤ 25 °C
120
P
der
(%)
80
001aab993
40
0
0
40
80
120
T
mb
(°C)
160
Fig. 4. Normalized total power dissipation as a function of mounting base temperature
BUJD203AD
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
11 October 2016
4 / 13
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