Junction Temperature ......................................................+150°C
Operating Temperature Range
........................... -40°C to +85°C
Storage Temperature Range
............................ -65°C to +150°C
Lead Temperature (soldering, 10s) (TQFN-EP) .............. +300°C
Soldering Temperature (reflow) .......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Thermal Characteristics
(Note 1)
TQFN
Junction-to-Ambient Thermal Resistance (θ
JA
) ..........48°C/W
Junction-to-Case Thermal Resistance (θ
JC
) ...............10°C/W
WLP
Junction-to-Ambient Thermal Resistance (θ
JA
) ..........73°C/W
Junction-to-Case Thermal Resistance (θ
JC
) ...............30°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Electrical Characteristics
(V
PVDD
= V
CC
= V
SHDN
= 3.6V, V
PGND
= V
GND
= 0V, Z
L
= 8Ω
+ 68µH between OUT+ and OUT-. [MAX98307 R
IN+
= R
IN-
= 10kΩ,
R
FB+
= R
FB-
= 20kΩ] C
IN+
= C
IN-
= 0.33µF, A
V
= 14.5dB, AC measurement bandwidth 20Hz to 20kHz, T
A
= T
MIN
to T
MAX
, unless
otherwise noted. Typical values are at T
A
= +25°C.) (Notes 2, 3)
PARAMETER
Power-Supply Range
Quiescent Current
Shutdown Current
Power-Supply Rejection Ratio
(Note 4)
SYMBOL
V
PVDD
, V
CC
I
DD
I
SHDN
PSRR
CONDITIONS
Guaranteed by PSRR test
V
PVDD
= 3.6V
SHDN
= GND
V
PVDD
= 2.6V to 5.25V
f = 217Hz, 200mV
P-P
ripple
f = 10kHz, 200mV
P-P
ripple
t
ON
V
BIAS
A
V
= 20.5dB (maximum gain)
A
V
= 17.5dB
Input Resistance (MAX98308)
R
IN
A
V
= 14.5dB
A
V
= 11.5dB
A
V
= 8.5dB
15
Time from shutdown
or power-on to full
operation
MAX98308
MAX98307,
R
IN
= 10kΩ
MIN
2.6
1.85
0.225
78
78
67
25
50
1.3
22
22
22
28
40
kΩ
40
80
ms
V
dB
TYP
MAX
5.25
2.7
10
UNITS
V
mA
µA
Turn-On Time
Input DC Bias Voltage
www.maximintegrated.com
Maxim Integrated
│
3
MAX98307/MAX98308
3.3W Mono Class DG Multilevel Audio Amplifier
Electrical Characteristics (continued)
(V
PVDD
= V
CC
= V
SHDN
= 3.6V, V
PGND
= V
GND
= 0V, Z
L
= 8Ω
+ 68µH between OUT+ and OUT-. [MAX98307 R
IN+
= R
IN-
= 10kΩ,
R
FB+
= R
FB-
= 20kΩ] C
IN+
= C
IN-
= 0.33µF, A
V
= 14.5dB, AC measurement bandwidth 20Hz to 20kHz, T
A
= T
MIN
to T
MAX
, unless
otherwise noted. Typical values are at T
A
= +25°C.) (Notes 2, 3)
PARAMETER
SYMBOL
CONDITIONS
GAIN = short to GND
Voltage Gain
(MAX98308)
GAIN = 100kΩ pulldown to GND
A
V
GAIN = short to PVDD
GAIN = 100kΩ pullup to PVDD
GAIN = unconnected
Common-Mode Rejection Ratio
(MAX98308)
CMRR
f
IN
= 1kHz
Z
L
= 8Ω + 68µH,
V
PVDD
= 3.6V
f
IN
= 1kHz,
THD+N = 1%
Z
L
= 8Ω + 68µH,
V
PVDD
= 4.2V
Z
L
= 8Ω + 68µH,
V
PVDD
= 5.0V
Z
L
= 8Ω + 68µH,
V
PVDD
= 3.6V
f
IN
= 1kHz,
THD+N = 10%
Z
L
= 8Ω + 68µH,
V
PVDD
= 4.2V
Z
L
= 8Ω + 68µH,
V
PVDD
= 5.0V
Z
SPK
= 8Ω + 68µH,
V
PVDD
= 3.6V
THD+N ≤ 1%
Output Power (MAX98308)
P
OUT
Z
SPK
= 8Ω + 68µH,
V
PVDD
= 4.2V
Z
SPK
= 8Ω + 68µH,
V
PVDD
= 5.0V
Z
SPK
= 8Ω + 68µH,
V
PVDD
= 3.6V
Z
SPK
= 8Ω + 68µH,
V
PVDD
= 4.2V
MIN
20
17
14
11
8
TYP
20.5
17.5
14.5
11.5
8.5
65
1.54
2
2.85
W
1.77
2.3
3.3
1.4
1.92
2.7
1.57
2.13
W
MAX
21
18
15
12
9
dB
dB
UNITS
Output Power (MAX98307)
P
OUT
THD+N ≤ 10%
www.maximintegrated.com
Maxim Integrated
│
4
MAX98307/MAX98308
3.3W Mono Class DG Multilevel Audio Amplifier
Electrical Characteristics (continued)
(V
PVDD
= V
CC
= V
SHDN
= 3.6V, V
PGND
= V
GND
= 0V, Z
L
= 8Ω
+ 68µH between OUT+ and OUT-. [MAX98307 R
IN+
= R
IN-
= 10kΩ,
R
FB+
= R
FB-
= 20kΩ] C
IN+
= C
IN-
= 0.33µF, A
V
= 14.5dB, AC measurement bandwidth 20Hz to 20kHz, T
A
= T
MIN
to T
MAX
, unless
otherwise noted. Typical values are at T
A
= +25°C.) (Notes 2, 3)
PARAMETER
Total Harmonic Distortion Plus
Noise
Output Offset Voltage
SYMBOL
THD+N
V
OS
K
CP
CONDITIONS
f
IN
= 1kHz, P
OUT
= 1W
T
A
= +25°C
Peak voltage,
A-weighted,
32 samples per
second (Notes 4, 5)
Into shutdown
Out of shutdown
MIN
TYP
0.05
±1
-65
dBV
-65
340
η
I
LIM
V
N
V
IH
V
IL
T
A
= +25°C
A-weighted
1.4
0.4
±10
f
IN
= 1kHz, P
OUT
at 500mW,
THD+N = 0.02%
f
IN
= 1kHz, P
OUT
at 1W, THD+N = 0.05%
Current Limit
Output Noise
LOGIC INPUT (SHDN)
Input Voltage High
Input Voltage Low
Input Leakage Current
Note
Note
Note
Note
2:
3:
4:
5:
V
V
µA
84
82
2
52
A
RMS
µV
RMS
kHz
%
±5
MAX
UNITS
%
mV
Click-and-Pop Level
Output Switching Frequency
Efficiency
100% production tested at T
A
= +25°C. Specifications over temperature limits are guaranteed by design.
Testing performed with a resistive load in series with an inductor to simulate an actual speaker. For R
L
= 8Ω, L = 68µH.
Amplifier inputs AC-coupled to GND.
Specified at room temperature with an 8Ω resistive load in series with a 68µH inductive load connected across the BTL
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