Freescale Semiconductor
Technical Data
Document Number: MRF8S21120H
Rev. 0, 5/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
850 mA, P
out
= 28 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
17.4
17.5
17.6
η
D
(%)
34.6
34.1
34.0
Output PAR
(dB)
6.4
6.5
6.4
ACPR
(dBc)
--37.5
--38.0
--37.6
MRF8S21120HR3
MRF8S21120HSR3
2110-
-2170 MHz, 28 W AVG., 28 V
W-
-CDMA, LTE
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 160 Watts CW
(1)
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 1 dB Compression Point
≃
107 Watts CW
(1)
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
Optimized for Doherty Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(2,3)
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
CASE 465-
-06, STYLE 1
NI-
-780
MRF8S21120HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF8S21120HSR3
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
94
0.44
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 74°C, 28 W CW, 28 Vdc, I
DQ
= 850 mA, 2140 MHz
Case Temperature 80°C, 120 W CW
(1)
, 28 Vdc, I
DQ
= 850 mA, 2140 MHz
Symbol
R
θJC
Value
(3,4)
0.53
0.51
Unit
°C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8S21120HR3 MRF8S21120HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 172
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 850 mAdc)
Fixture Gate Quiescent Voltage
(1)
(V
DD
= 28 Vdc, I
D
= 850 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1.72 Adc)
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
4.0
0.1
1.8
2.6
5.2
0.16
2.7
—
7.0
0.3
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(2)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 850 mA, P
out
= 28 W Avg., f = 2170 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
17.0
32.5
5.9
—
—
17.6
34.0
6.4
--37.6
--13
20.0
—
—
--36.0
--8
dB
%
dB
dBc
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 850 mA, P
out
= 28 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
17.4
17.5
17.6
η
D
(%)
34.6
34.1
34.0
Output PAR
(dB)
6.4
6.5
6.4
ACPR
(dBc)
--37.5
--38.0
--37.6
IRL
(dB)
--22
--18
--13
1. V
GG
= 2 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF8S21120HR3 MRF8S21120HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 80 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 28 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
Symbol
P1dB
IMD
sym
Min
—
—
Typ
107
(1)
45
Max
—
—
Unit
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 850 mA, 2110--2170 MHz Bandwidth
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
50
0.2
0.015
0.005
(1)
—
—
—
—
MHz
dB
dB/°C
dBm/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8S21120HR3 MRF8S21120HSR3
RF Device Data
Freescale Semiconductor
3
R2
R1
V
GG
C3
C5
C7
R3
C13
C9
C10
V
DD
C1
C4 C2
CUT OUT AREA
C6
C8
C11
C12
MRF8S21120H
Rev. 1
Figure 1. MRF8S21120HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S21120HR3(HSR3) Test Circuit Component Designations and Values
Part
C1, C3, C6, C7, C8
C2
C4
C5, C9, C10, C11, C12
C13
R1, R2
R3
PCB
Description
6.8 pF Chip Capacitors
1.2 pF Chip Capacitor
0.2 pF Chip Capacitor
10
μF,
50 V Chip Capacitors
220
μF
Electrolytic Capacitor
2 KΩ, 1/4 W Chip Resistors
10
Ω,
1/4 W Chip Resistor
0.030″,
ε
r
= 2.55
Part Number
ATC100B6R8BT500XT
ATC100B1R2BT500XT
ATC100B0R2BT500XT
C5750X5R1H106MT
2222 120 18221
WCR12062K2FI
232272461009
AD255A
ATC
ATC
ATC
TDK
Vishay BC Components
Welwyn
Phycomp
Arlon
Manufacturer
MRF8S21120HR3 MRF8S21120HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
V
DD
= 28 Vdc, P
out
= 28 W (Avg.), I
DQ
= 850 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
η
D
, DRAIN
EFFICIENCY (%)
18.1
18
17.9
G
ps
, POWER GAIN (dB)
17.8
17.7
17.6
17.5
17.4
17.3
17.2
17.1
2060
IRL
η
D
G
ps
PARC
ACPR
37
36
35
34
33
--33
ACPR (dBc)
--34
--35
--36
Input Signal PAR = 7.5 dB @ 0.01% --37
Probability on CCDF
--38
2140 2160 2180 2200 2220
0
--6
--12
--18
--24
--30
IRL, INPUT RETURN LOSS (dB)
--1.2
--1.3
--1.4
--1.5
--1.6
--1.7
PARC (dB)
2080
2100
2120
f, FREQUENCY (MHz)
Figure 2. Output Peak- -Average Ratio Compression (PARC)
-to-
Broadband Performance @ P
out
= 28 Watts Avg.
--10
--20
--30
--40
--50
--60
IM5--L
IM5--U
IM7--L
IM7--U
1
10
TWO--TONE SPACING (MHz)
100
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, P
out
= 80 W (PEP), I
DQ
= 850 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3--U
IM3--L
Figure 3. Intermodulation Distortion Products
versus Two-
-Tone Spacing
19
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
18
G
ps
, POWER GAIN (dB)
17
16
15
14
13
1
0
--1
--1 dB = 26 W
--2
--3
--4
--5
--2 dB = 36 W
--3 dB = 48 W
G
ps
20
10
PARC
0
80
100
60
50
ACPR
40
30
--5
--15
--25
--35
--45
--55
--65
ACPR (dBc)
V
DD
= 28 Vdc, I
DQ
= 850 mA
f = 2140 MHz
η
D
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
0
20
40
60
P
out
, OUTPUT POWER (WATTS)
Figure 4. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF8S21120HR3 MRF8S21120HSR3
RF Device Data
Freescale Semiconductor
5
η
D
,
DRAIN EFFICIENCY (%)
stm32/stm8
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