DIGITAL AUDIO MOSFET
Features
Latest MOSFET silicon technology
Key parameters optimized for Class-D audio amplifier
applications
Low R
DS(on)
for improved efficiency
Low Qg for better THD and improved efficiency
Low Qrr for better THD and lower EMI
Low package stray inductance for reduced ringing and lower
EMI
Can deliver up to 400 W per channel into 8load in half-bridge
configuration amplifier
Dual sided cooling compatible
Compatible with existing surface mount technologies
RoHS compliant, halogen-free
Lead-free (qualified up to 260°C reflow)
IRF6641TRPbF
Key Parameters
V
DS
R
DS(ON)
typ. @ V
GS
= 10V
Qg typ.
R
G(int)
typ.
200
51
34
1.0
V
m
nC
MZ
DirectFET
®
ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details)
SQ
SX
ST
SH
MQ
MX
MT
MN
MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and
internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6641PbF device utilizes DirectFET
®
packaging technology. DirectFET
®
packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET
®
package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET
®
package
also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation.
These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Base part number
IRF6641PbF
Package Type
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF6641TRPbF
Absolute Maximum Ratings
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
I
AR
T
J
T
STG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
±20
26
4.6
3.7
37
89
2.8
1.8
46
11
0.022
-40 to + 150
Units
V
A
W
mJ
A
W/°C
°C
Notes
through
are on page 9
1
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© 2013 International Rectifier
July 1, 2013
IRF6641TRPbF
Thermal Resistance
R
JA
R
JA
R
JA
R
JC
R
J-PCB
Parameter
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Min.
200
–––
–––
3.0
–––
–––
–––
–––
–––
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.23
51
4.0
-11
–––
–––
–––
–––
–––
34
8.7
1.9
9.5
14
11
16
11
31
6.5
2290
240
46
1780
100
Typ.
–––
–––
–––
85
320
Max.
–––
–––
59.9
4.9
–––
20
250
100
-100
–––
48
–––
–––
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max.
26
37
1.3
130
480
Typ.
–––
12.5
20
–––
1.0
Units
V
V/°C
m
V
mV/°C
µA
nA
Max.
45
–––
–––
1.4
–––
Units
°C/W
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
BV
DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
V
GS(th)
I
DSS
Drain-to-Source Leakage Current
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-VthGate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 5.5A
V
DS
= V
GS
, I
D
= 150µA
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, V
GS
= 0V, T
J
=125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 5.5A
V
DS
= 100V
V
GS
= 10V
I
D
= 5.5A
V
DS
= 16V, V
GS
= 0V
V
DD
= 100V, V
GS
= 10V
I
D
= 5.5A
R
G
= 6.2
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
=0V, V
DS
=1.0V, ƒ=1.0MHz
V
GS
=0V, V
DS
=160V, ƒ=1.0MHz
Dynamic @ T
J
= 25°C (unless otherwise specified)
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
S
nC
ns
pF
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Units
Conditions
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
V
T
J
= 25°C, I
S
= 5.5A, V
GS
= 0V
ns T
J
= 25°C, I
F
= 5.5A,V
DD
= 100V
nC di/dt = 100A/µs
D
G
S
2
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© 2013 International Rectifier
July 1, 2013
IRF6641TRPbF
100
TOP
VGS
15V
10V
8.0V
7.0V
100
TOP
VGS
15V
10V
8.0V
7.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
7.0V
BOTTOM
10
10
7.0V
1
60µs PU LSE W IDTH
Tj = 25°C
1
0.1
1
VDS, Drain-to-Source Voltage (V)
10
0.1
0.1
60µs PU LSE W ID TH
Tj = 150°C
1
V DS, Drain-to-Source Voltage (V)
10
Fig 1.
Typical Output Characteristics
100
Fig 2.
Typical Output Characteristics
2.5
ID = 5.5A
VGS = 10V
Typical RDS(on) (Normalized)
16
ID, Drain-to-Source Current (A)
2.0
10
T J = 150°C
T J = 25°C
T J = -40°C
1
VDS = 10V
60µs
PULSE WIDTH
0.1
2
4
6
8
10
12
14
1.5
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + Cgd, C ds SHORTED
C rss = C gd
C oss = C ds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
12.0
ID= 5.5A
VGS, Gate-to-Source Voltage (V)
10.0
8.0
6.0
4.0
2.0
0.0
10000
C, Capacitance (pF)
VDS = 160V
VDS = 100V
VDS = 40V
C iss
1000
Coss
100
C rss
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
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© 2013 International Rectifier
Fig 6.
Typical Gate Charge vs Gate-to-Source Voltage
July 1, 2013
IRF6641TRPbF
100
T J = 150°C
ISD , Reverse Drain Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
10
T J = 25°C
T J = -40°C
100
10
1
100µsec
10msec
1
0.1
VGS = 0V
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
Tc = 25°C
Tj = 150°C
Single Pulse
0
1
10
100
1msec
0.01
1000
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
5
Fig 8.
Maximum Safe Operating Area
6.0
Typical VGS(th) , Gate threshold Voltage (V)
4
ID, Drain Current (A)
5.0
3
4.0
ID = 150µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
2
1
3.0
0
25
50
75
100
125
150
TA , Ambient Temperature (°C)
2.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Ambient Temperature
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 10.
Typical Threshold Voltage vs.
Junction Temperature
Thermal Response ( Z thJA )
10
1
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
1000
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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© 2013 International Rectifier
July 1, 2013
IRF6641TRPbF
)
RDS(on), Drain-to -Source On Resistance (m
200
180
160
140
120
100
80
60
40
20
0
4
6
8
10
12
14
16
TJ = 25°C
TJ = 125°C
Typical RDS(on) ( m)
100
ID = 5.5A
90
T J = 25°C
80
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
70
60
50
0
10
20
30
40
50
60
VGS, Gate -to -Source Voltage (V)
ID, Drain Current (A)
Fig 12.
Typical On-Resistance vs. Gate Voltage
Fig 13.
Typical On-Resistance vs. Drain Current
200
EAS , Single Pulse Avalanche Energy (mJ)
180
160
140
120
100
80
60
40
20
0
25
50
75
ID
TOP
15V
3.7A
5.7A
BOTTOM 11A
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
0.01
Fig 15a.
Unclamped Inductive Test Circuit
V
(BR)DSS
tp
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
I
AS
Fig 15b.
Unclamped Inductive Waveforms
Fig 16a.
Switching Time Test Circuit
5
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© 2013 International Rectifier
Fig 16b.
Switching Time Waveforms
July 1, 2013
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