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SST39LF010-55-4I-WHE: 产品描述NOR Flash 3.0 to 3.6V 1Mbit Multi-Purpose Flash; 产品类别存储; 文件大小278KB，共29页; 制造商Microchip(微芯科技); 官网地址https://www.microchip.com; 标准

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SST39LF010-55-4I-WHE概述

NOR Flash 3.0 to 3.6V 1Mbit Multi-Purpose Flash

SST39LF010-55-4I-WHE规格参数

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	Microchip(微芯科技)
产品种类 Product Category	NOR Flash
RoHS	Details
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	TSOP-32
Memory Size	1 Mbit
接口类型 Interface Type	Parallel
Organization	128 k x 8
Timing Type	Asynchronous
Data Bus Width	8 bit
电源电压-最小 Supply Voltage - Min	3 V
电源电压-最大 Supply Voltage - Max	3.6 V
Supply Current - Max	20 mA
最小工作温度 Minimum Operating Temperature	- 40 C
最大工作温度 Maximum Operating Temperature	+ 85 C
系列 Packaging	Tray
Memory Type	NOR
速度 Speed	55 ns
Architecture	Sector
工厂包装数量 Factory Pack Quantity	208

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1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

SST39LF010 / SST39LF020 / SST39LF040

SST39VF010 / SST39VF020 / SST39VF040

Data Sheet

The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020,

SST39VF040 are 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash

(MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash

technology. The split-gate cell design and thick-oxide tunneling injector attain bet-

ter reliability and manufacturability compared with alternate approaches. The

SST39LF010/020/040 devices write (Program or Erase) with a 3.0-3.6V power

supply. The SST39VF010/020/040 devices write with a 2.7-3.6V power supply.

The devices conform to JEDEC standard pinouts for x8 memories.

Features

• Organized as 128K x8 / 256K x8 / 512K x8

• Single Voltage Read and Write Operations

– 3.0-3.6V for SST39LF010/020/040

– 2.7-3.6V for SST39VF010/020/040

• Fast Erase and Byte-Program:

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

2 seconds (typical) for SST39LF/VF010

4 seconds (typical) for SST39LF/VF020

8 seconds (typical) for SST39LF/VF040

• Automatic Write Timing

– Internal V

Generation

• Low Power Consumption

(typical values at 14 MHz)

– Active Current: 5 mA (typical)

– Standby Current: 1 µA (typical)

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• Sector-Erase Capability

– Uniform 4 KByte sectors

• CMOS I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Fast Read Access Time:

– 55 ns for SST39LF010/020/040

– 70 ns for SST39VF010/020/040

• Latched Address and Data

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

• All devices are RoHS compliant

www.microchip.com

DS25023B

06/13

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39LF010 / SST39LF020 / SST39LF040

SST39VF010 / SST39VF020 / SST39VF040

Data Sheet

Product Description

The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020, SST39VF040 are

128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprie-

tary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tun-

neling injector attain better reliability and manufacturability compared with alternate approaches. The

SST39LF010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The

SST39VF010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC

standard pinouts for x8 memories.

Featuring high performance Byte-Program, the SST39LF010/020/040 and SST39VF010/020/040

devices provide a maximum Byte-Program time of 20 µsec. These devices use Toggle Bit or Data#

Polling to indicate the completion of Program operation. To protect against inadvertent write, they have

on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a

wide spectrum of applications, they are offered with a guaranteed typical endurance of 100,000 cycles.

Data retention is rated at greater than 100 years.

The SST39LF010/020/040 and SST39VF010/020/040 devices are suited for applications that require

convenient and economical updating of program, configuration, or data memory. For all system appli-

cations, they significantly improves performance and reliability, while lowering power consumption.

They inherently use less energy during Erase and Program than alternative flash technologies. The

total energy consumed is a function of the applied voltage, current, and time of application. Since for

any given voltage range, the SuperFlash technology uses less current to program and has a shorter

erase time, the total energy consumed during any Erase or Program operation is less than alternative

flash technologies. These devices also improve flexibility while lowering the cost for program, data, and

configuration storage applications.

The SuperFlash technology provides fixed Erase and Program times, independent of the number of

Erase/Program cycles that have occurred. Therefore the system software or hardware does not have

to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-

gram times increase with accumulated Erase/Program cycles.

To meet surface mount requirements, the SST39LF010/020/040 and SST39VF010/020/040 devices

are offered in 32-lead PLCC and 32-lead TSOP packages. See Figures 2 and 3 for pin assignments.