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MJF2955G

产品描述Bipolar Transistors - BJT 10A 90V 30W PNP
产品类别分立半导体    晶体管   
文件大小112KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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MJF2955G概述

Bipolar Transistors - BJT 10A 90V 30W PNP

MJF2955G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
零件包装代码TO-220AB
包装说明LEAD FREE, PLASTIC, CASE 221D-03, TO-220, FULL PACK-3
针数3
制造商包装代码221D-03
Reach Compliance Codenot_compliant
ECCN代码EAR99
Factory Lead Time1 week
其他特性UL RECOGNIZED
外壳连接ISOLATED
最大集电极电流 (IC)10 A
集电极-发射极最大电压90 V
配置SINGLE
最小直流电流增益 (hFE)5
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
JESD-609代码e3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)260
极性/信道类型PNP
最大功率耗散 (Abs)30 W
认证状态Not Qualified
表面贴装NO
端子面层Tin (Sn)
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间40
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)2 MHz

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MJF3055 (NPN),
MJF2955 (PNP)
Complementary
Silicon Power Transistors
Specifically designed for general purpose amplifier and switching
applications.
Features
http://onsemi.com
Isolated Overmold Package (1500 Volts RMS Min)
Electrically Similar to the Popular MJE3055T and MJE2955T
Collector−Emitter Sustaining Voltage
V
CEO(sus)
90 Volts
10 Amperes Rated Collector Current
No Isolating Washers Required
Reduced System Cost
UL Recognized, File #E69369, to 3500 V
RMS
Isolation
Epoxy Meets UL 94 V−0 at 0.125 in
ESD Ratings: Machine Model, C;
u400
V
Human Body Model, 3B;
u8000
V
Pb−Free Packages are Available*
COMPLEMENTARY SILICON
POWER TRANSISTORS
10 AMPERES
90 VOLTS, 30 WATTS
TO−220 FULLPACK
CASE 221D
STYLE 2
1
2
3
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MAXIMUM RATINGS
Rating
Symbol
V
CES
I
C
I
B
Value
90
90
10
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector−Emitter Sustaining Voltage
Base−Emitter Voltage
V
CEO(sus)
V
EBO
Collector−Emitter Breakdown Voltage
Collector Current
Continuous
Base Current
Continuous
5.0
6.0
RMS Isolation Voltage (Note 3)
(t = 0.3 sec, R.H.
30%, T
A
= 25_C)
Per Figure 5
V
ISOL
P
D
P
D
4500
30
0.25
V
RMS
W
W/_C
W
W/_C
_C
Total Power Dissipation @ T
C
= 25_C (Note 2)
Derate above 25_C
Total Power Dissipation @ T
A
= 25_C
Derate above 25_C
2.0
0.016
Operating and Storage Temperature Range
T
J
, T
stg
–55 to
+150
Max
4.0
MARKING DIAGRAM
Fxx55G
AYWW
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
qJC
R
qJA
Unit
Thermal Resistance, Junction−to−Case (Note 2)
Thermal Resistance, Junction−to−Ambient
_C/W
_C/W
62.5
Fxx55 = Specific Device Code
xx= 29 or 30
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
Lead Temperature for Soldering Purposes
T
L
260
_C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
v
10%.
2. Measurement made with thermocouple contacting the bottom insulated
surface (in a location beneath the die), the devices mounted on a heatsink with
thermal grease and a mounting torque of
6 in. lbs.
3. Proper strike and creepage distance must be provided.
ORDERING INFORMATION
Device
MJF2955
MJF2955G
MJF3055
MJF3055G
Package
TO−220 FULLPACK
TO−220 FULLPACK
(Pb−Free)
TO−220 FULLPACK
TO−220 FULLPACK
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2008
July, 2008
Rev. 7
1
Publication Order Number:
MJF3055/D

 
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