1.5V Drive Nch MOSFET
RT1C060UN
Structure
Silicon N-channel MOSFET
Dimensions
(Unit : mm)
TSST8
(8)
(7)
(6)
(5)
Features
1) Low on-resistance.
2) High power package (TSST8).
3) Low voltage drive (1.5V drive).
(1)
(2)
(3)
(4)
Abbreviated symbol : VB
Application
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RT1C060UN
Taping
TR
3000
Inner circuit
(8)
(7)
(6)
(5)
∗2
Absolute maximum ratings
(Ta = 25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a ceramic board.
Symbol
V
DSS
V
GSS
Limits
20
10
6
Unit
V
V
A
A
A
A
W
C
C
(1) Drain
(2) Drain
(3) Drain
(4) Gate
(5) Source
(6) Drain
(7) Drain
(8) Drain
∗1
(1)
(2)
(3)
(4)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
Continuous
Pulsed
Continuous
Pulsed
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
*1
24
1
24
1.25
150
55
to +150
*1
*2
Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a ceramic board.
Symbol
Rth
(ch-a)
*
Limits
100
Unit
C
/ W
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©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.04 - Rev.A
RT1C060UN
Electrical characteristics
(Ta = 25C)
Parameter
Gate-source leakage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
Symbol
I
GSS
I
DSS
V
GS (th)
*
R
DS (on)
Min.
-
20
-
0.3
-
-
-
-
l Y
fs
l*
C
iss
C
oss
C
rss
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
Q
g
*
Q
gs
*
Q
gd
*
5.5
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
20
24
28
33
-
870
190
85
7
30
75
20
11
2.0
2.1
Max.
10
-
1
1.0
28
33
39
66
-
-
-
-
-
-
-
-
-
-
-
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
m
Unit
A
V
A
V
Conditions
V
GS
=±10V, V
DS
=0V
I
D
=1mA, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
DS
=10V, I
D
=1mA
I
D
=6A, V
GS
=4.5V
I
D
=6A, V
GS
=2.5V
I
D
=3A, V
GS
=1.8V
I
D
=1.2A, V
GS
=1.5V
I
D
=6A, V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=3A, V
DD
10V
V
GS
=4.5V
R
L
=3.3
R
G
=10
I
D
=6A, V
DD
10V
V
GS
=4.5V R
L
=1.7
R
G
=10
Data Sheet
Drain-source breakdown voltage V
(BR)DSS
Body
diode characteristics
(Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
*Pulsed
Symbol
V
SD
*
Min.
-
Typ.
-
Max.
1.2
Unit
V
Conditions
I
s
=6A, V
GS
=0V
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©2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.04 - Rev.A
RT1C060UN
Electrical characteristic curves
6
5
4
3
2
V
GS
= 1.5V
1
V
GS
= 1.0V
0
0
0.2
0.4
0.6
0.8
1
0
0
2
4
6
8
10
V
GS
= 1.1V
V
GS
=10V
V
GS
=4.5V
6
V
GS
= 1.2V
Ta=25°C
Pulsed
5
4
3
2
1
V
GS
= 1.2V
V
GS
= 1.1V
V
GS
=10V
V
GS
=4.5V
V
GS
=2.5V
V
GS
=1.8V
V
GS
=1.5V
V
GS
= 1.0V
DRAIN CURRENT : I
D
[A]
10
1
0.1
0.01
0.001
0
0.5
1
Ta=25°C
Pulsed
100
Data Sheet
V
DS
= 10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
DRAIN CURRENT : I
D
[A]
V
GS
=2.5V
V
GS
=1.8V
DRAIN CURRENT : I
D
[A]
1.5
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.1 Typical Output Characteristics(
Ⅰ)
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.2 Typical Output Characteristics(
Ⅱ)
GATE-SOURCE VOLTAGE : V
GS
[V]
Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
Ta= 25°C
Pulsed
100
V
GS
= 1.5V
V
GS
= 1.8V
V
GS
= 2.5V
V
GS
= 4.5V
V
GS
= 4.5V
Pulsed
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
1000
1000
1000
V
GS
= 2.5V
Pulsed
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
10
10
1
0.1
1
DRAIN-CURRENT : I
D
[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅰ)
10
1
0.1
1
DRAIN-CURRENT : I
D
[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅱ)
10
1
0.1
1
10
DRAIN-CURRENT : I
D
[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅲ)
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
V
GS
= 1.8V
Pulsed
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
1000
1000
V
GS
= 1.5V
Pulsed
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
V
DS
= 10V
Pulsed
10
10
10
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
0.1
1
DRAIN-CURRENT : I
D
[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅳ)
10
1
0.1
1
DRAIN-CURRENT : I
D
[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅴ)
10
0.1
0.01
0.1
1
10
DRAIN-CURRENT : I
D
[A]
Fig.9 Forward Transfer Admittance
vs. Drain Current
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©2010 ROHM Co., Ltd. All rights reserved.
3/5
2010.04 - Rev.A
RT1C060UN
Data Sheet
REVERSE DRAIN CURRENT : Is [A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
100
V
GS
=0V
Pulsed
10
100
I
D
= 6A
SWITCHING TIME : t [ns]
Ta=25°C
Pulsed
10000
t
d
(off)
t
f
1000
Ta=25°C
V
DD
=10V
V
GS
=4.5V
R
G
=10Ω
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0
0.5
1
1.5
50
I
D
= 3A
100
t
d
(on)
0.1
10
t
r
0
0
5
10
1
0.01
0.1
1
10
0.01
SOURCE-DRAIN VOLTAGE : V
SD
[V]
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : V
GS
[V]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
DRAIN-CURRENT : I
D
[A]
Fig.12 Switching Characteristics
5
GATE-SOURCE VOLTAGE : V
GS
[V]
CAPACITANCE : C [pF]
Ta=25°C
V
DD
=10V
4 I = 6A
D
R
G
=10Ω
3 Pulsed
2
1
0
0 1 2 3 4 5 6 7 8 9 101112131415
TOTAL GATE CHARGE : Qg [nC]
Fig.13 Dynamic Input Characteristics
10000
Ta=25°C
f=1MHz
V
GS
=0V
Ciss
1000
100
Crss
Coss
10
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
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©2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.04 - Rev.A
RT1C060UN
Measurement circuits
Pulse width
Data Sheet
V
GS
I
D
R
L
D.U.T.
V
DS
V
GS
V
DS
50%
10%
10%
90%
50%
10%
90%
R
G
V
DD
t
d(on)
t
on
90%
t
r
t
d(off)
t
off
t
f
Fig.1-1 Switching time measurement circuit
Fig.1-2 Switching waveforms
V
G
V
GS
I
D
R
L
V
DS
V
GS
Q
gs
Q
g
I
G(Const.)
R
G
D.U.T.
V
DD
Q
gd
Charge
Fig.2-1 Gate charge measurement circuit
Fig.2-2 Gate Charge Waveform
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©2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.04 - Rev.A
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