VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF
www.vishay.com
Vishay Semiconductors
Thyristor / Diode and Thyristor / Thyristor
(Super MAGN-A-PAK Power Modules), 500 A
FEATURES
• High current capability
• High surge capability
• Industrial standard package
• 3000 V
RMS
isolating voltage with non-toxic
substrate
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Super MAGN-A-PAK
TYPICAL APPLICATIONS
• Motor starters
• DC motor controls - AC motor controls
PRODUCT SUMMARY
I
T(AV)
, I
F(AV)
Type
Package
Circuit
configuration
500 A
Modules - thyristor, standard
Super MAGN-A-PAK
Two SCRs doubler circuit,
SCR / diode doubler circuit, positive control,
SCR / diode doubler circuit, negative control
• Uninterruptible power supplies
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
, I
F(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
√t
V
RRM
T
Stg
T
J
Range
Range
Range
CHARACTERISTICS
T
C
= 82 °C
T
C
= 82 °C
50 Hz
60 Hz
50 Hz
60 Hz
VALUES
500
785
17.8
18.7
1591
1452
15 910
800 to 1600
-40 to +150
-40 to +130
UNITS
A
A
kA
kA
2
s
kA
2
√s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
08
VS-VSK.500
12
14
16
V
RRM
/V
DRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
800
1200
1400
1600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
1500
1700
100
I
RRM
/I
DRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 28-Apr-17
Document Number: 94420
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF
www.vishay.com
Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
I
T(AV),
I
F(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
180° conduction, half sine wave at T
C
= 82 °C
t = 10 ms
Maximum peak, one-cycle,
non-repetitive on-state surge current
I
TSM,
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Maximum latching current
I
2
√t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
V
FM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal
half wave,
initial T
J
= T
J
maximum
VALUES
500
82
785
17.8
18.7
15.0
15.7
1591
1452
1125
1027
15 910
0.85
0.93
0.36
0.32
1.50
1.50
500
1000
kA
2
√s
V
kA
2
s
kA
UNITS
A
°C
A
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 1500 A, T
J
= 25 °C, t
p
= 10 ms sine pulse
I
pk
= 1500 A, T
J
= 25 °C, t
p
= 10 ms sine pulse
T
J
= 25 °C, anode supply 12 V resistive load
mΩ
V
V
mA
SWITCHING
PARAMETER
Maximum rate of rise of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
T
J
= T
J
maximum, I
TM
= 400 A, V
DRM
applied
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
I
TM
= 750 A; T
J
= T
J
maximum, dI/dt = - 60 A/μs,
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
Ω
VALUES
1000
2.0
μs
200
UNITS
A/μs
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
RMS insulation voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
V
INS
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= 130 °C, linear to V
D
= 80 % V
DRM
t=1s
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
1000
3000
100
UNITS
V/μs
V
mA
Revision: 28-Apr-17
Document Number: 94420
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum peak average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
+I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
T
J
= 25 °C, V
ak
12 V
T
J
= T
J
maximum
T
J
= T
J
maximum, t
p
≤
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, t
p
≤
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
VALUES
10
2.0
3.0
20
5.0
200
3.0
10
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
Mounting
torque
± 10 %
Super MAGN-A-PAK to heatsink
busbar to Super MAGN-A-PAK
SYMBOL
T
J
T
Stg
R
thJC
R
thC-hs
DC operation
Mounting surface smooth, flat and greased
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound
TEST CONDITIONS
VALUES
-40 to +130
-40 to +150
0.065
K/W
0.02
6 to 8
Nm
12 to 15
1500
See dimensions - link at the end of datasheet
g
UNITS
°C
Approximate weight
Case style
Super MAGN-A-PAK
ΔR
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.009
0.011
0.014
0.021
0.037
RECTANGULAR CONDUCTION
0.006
0.011
0.015
0.022
0.038
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 28-Apr-17
Document Number: 94420
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF
www.vishay.com
Vishay Semiconductors
Maximum Average On-state Power Loss (W)
1000
900
800
700
600
500
400 RMS Limit
300
200
100
0
0
100 200 300 400 500 600 700 800
Average On-state Current (A)
Conduction Period
Maximum Allowable Case T
emperature (°C)
130
120
110
100
90
30°
80
70
60
0
100
200
300
400
500
600
Average On-state Current (A)
60°
90°
120°
180°
Conduc tion Angle
VSK.500.. S
eries
R
thJC
(DC) = 0.065 K/ W
DC
180°
120°
90°
60°
30°
VSK.500.. S
eries
Per Junc tion
T
J
= 130°C
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
Maximum Allowable Case T
emperature (°C)
Peak Half S Wave On-state Current (A)
ine
130
120
110
100
90
80
70
60
0
100 200 300 400 500 600 700 800 900
Average On-state Current (A)
30°
60°
90°
120°
180°
Conduction Period
VSK.500.. S
eries
R
thJC
(DC) = 0.065 K/ W
16000
15000
14000
13000
12000
11000
10000
9000
8000
7000
1
At Any Rated Loa d Cond ition And With
Rated V
RRM
Ap p lied Following S
urge.
Initial T = 130°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
DC
VSK.500.. S
eries
Per Junction
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average On-state Power Los (W)
s
Peak Half S Wave On-state Current (A)
ine
700
600
500
400
300
200
100
0
0
100
200
300
400
500
Average On-state Current (A)
Conduc tion Angle
18000
16000
14000
12000
10000
8000
180°
120°
90°
60°
30°
R
MSLimit
Ma ximum Non R etitive S
ep
urge Current
Versus Pulse T
rain Dura tion. Control
Of Cond uc tion Ma y Not Be Maintained.
Initial T = 130°C
J
No Voltage Reapplied
Rated V
RRM
Reapplied
VSK.500.. S
eries
Per Junction
T
J
= 130°C
VSK.500.. S
eries
Per Junction
0.1
Pulse T
rain Duration (s)
1
6000
0.01
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 28-Apr-17
Document Number: 94420
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF
www.vishay.com
Vishay Semiconductors
750
700
180°
650
120°
0.
16
90°
600
K/
60°
W
550
0.2
30°
K/
500
Conduction Angle
W
450
400
0.3
K/ W
350
0.4
300
K/ W
250
0.6 K
200
/W
150
VSK.500.. S
eries
Per Module
100
T = 130°C
50
J
0
0 100 200 300 400 500 600 700 800
0
20
T
otal R Output Current (A)
MS
Maximum T
otal On-state Power Loss (W)
09
0.
W
K/
Maximum Allowable Ambient T
emperature (°C)
Fig. 7 - On-State Power Loss Characteristics
12
0.
W
K/
S
R
th
A
=
07
0.
W
K/
e lt
-D
a
R
40
60
80
100
120
3000
Maximum T
otal Power Loss (W)
2500
2000
0.0
5
180°
(S
ine)
180°
(R
ect)
0.
02
R
t
A
hS
0.
03
K/
W
=
01
0.
K/
W
W
K/
ta
el
-D
1500
1000
500
0
0
200
400
600
800
0
1000
2 x VSK.500.. Series
S
ingle Phase B
ridge
Connected
T
J
= 130°C
K/
W
0.0
8K
/W
0.12
K/ W
0.2 K
/W
R
20
40
60
80
100
120
T
otal Output Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 8 - On-State Power Loss Characteristics
4500
Maximum T
otal Power Loss (W)
4000
3500
3000
2500
2000
1500
1000
500
0
0
250
500
750
0
1000 1250 1500
20
40
60
80
100
120
T
otal Output Current (A)
Maximum Allowable Ambient T
emperature (°C)
3 x VSK.500.. S
eries
T
hree Phase B
ridge
Connected
T
J
= 130°C
120°
(R
ect)
R
SA
th
=
0.
02
K/
W
0.0
3K
/W
0.
01
K/
W
-D
el
ta
R
0.0
5K
/W
0.08
K/ W
0.2 K/
W
Fig. 9 - On-State Power Loss Characteristics
Revision: 28-Apr-17
Document Number: 94420
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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