VS-UFB201FA40
www.vishay.com
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 200 A
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high junction
temperature (T
J
max. = 175 °C)
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
SOT-227
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V
R
I
F(AV)
per module at T
C
= 86 °C
t
rr
Type
Package
400 V
200 A
40 ns
Modules - diode FRED Pt
®
SOT-227
DESCRIPTION / APPLICATIONS
The VS-UFB201FA40 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current per diode
Single pulse forward current per diode
Maximum power dissipation per module
RMS isolation voltage
Maximum junction temperature
Maximum case temperature
Storage temperature
SYMBOL
V
R
I
F
(1)
TEST CONDITIONS
T
C
= 88 °C
T
C
= 25 °C
T
C
= 88 °C
Any terminal to case, t = 1 min
MAX.
400
120
600
311
2500
-55 to +175
150
-55 to +150
UNITS
V
A
W
V
°C
I
FSM
P
D
V
ISOL
T
J
T
C
T
STG
Note
(1)
Maximum continuous forward current must be limited to 100 A to do not exceed the maximum temperature of power terminals
Revision: 18-Sep-2018
Document Number: 93793
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, EuropeAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-UFB201FA40
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PER DIODE
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
SYMBOL
V
BR
TEST CONDITIONS
I
R
= 100 μA
I
F
= 100 A
Forward voltage
V
FM
I
F
= 100 A, T
J
= 125 °C
I
F
= 200 A
I
F
= 200 A, T
J
= 125 °C
Reverse leakage current
Junction capacitance
I
RM
C
T
V
R
= V
R
rated
T
J
= 175 °C, V
R
= V
R
rated
V
R
= 400 V
MIN.
400
-
-
-
-
-
-
-
TYP.
-
1.33
1.19
1.56
1.49
0.20
0.40
76
MAX.
-
1.59
1.28
1.91
1.64
50
2
-
μA
mA
pF
V
UNITS
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 50 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
TYP.
40
80
160
7
16
310
1300
MAX.
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, single leg conducting
Junction to case, both leg conducting
Case to heatsink
Weight
Mounting torque
Case style
Torque to terminal
Torque to heatsink
SYMBOL
R
thJC
R
thCS
Flat, greased surface
TEST CONDITIONS
MIN.
-
-
-
-
-
-
TYP.
-
-
0.075
30
-
-
MAX.
0.56
0.28
-
-
1.1 (9.7)
1.8 (15.9)
SOT-227
g
Nm (lbf.in)
Nm (lbf.in)
°C/W
UNITS
Revision: 18-Sep-2018
Document Number: 93793
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, EuropeAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-UFB201FA40
www.vishay.com
Vishay Semiconductors
1000
T
J
= 175 °C
100
T
J
= 125 °C
10
1
0.1
0.01
0.001
I
F
- Instantaneous Forward Current (A)
1000
100
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
10
I
R
- Reverse Current (μA)
T
J
= 25 °C
1
0
0.5
1
1.5
2
2.5
0
50
100
150
200
250
300
350
400
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
C
T
- Junction Capacitance (pF)
1000
100
10
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
1
P
DM
0.1
DC
t
1
Single
pulse
(thermal resistance)
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.0001
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 18-Sep-2018
Document Number: 93793
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, EuropeAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-UFB201FA40
www.vishay.com
250
225
200
175
125 °C
I
F
= 50 A
I
F
= 25 A
125
50
25
V
R
= 200 V
Vishay Semiconductors
175
Allowable Case Temperature (°C)
150
125
t
rr
(ns)
100
DC
75
150
Square
wave (D = 0.50)
80 % Rated V
R
applied
see
note
(1)
100
25 °C
75
50
0
0
40
80
120
160
200
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
400
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
3000
V
R
= 200 V
2500
I
F
= 25 A
I
F
= 50 A
Average Power Loss (W)
350
300
250
200
150
100
RMS Limit
2000
Q
rr
(nC)
DC
50
0
0
40
80
120
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
1500
1000
500
0
125 °C
25 °C
160
200
240
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
40
V
R
= 200 V
30
I
F
= 50 A
I
F
= 25 A
t
rr
(ns)
20
125 °C
10
25 °C
0
100
1000
dI
F
/dt (A/μs)
Fig. 9 - Typical Reverse Recovery vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
Revision: 18-Sep-2018
Document Number: 93793
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, EuropeAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-UFB201FA40
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 18-Sep-2018
Document Number: 93793
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, EuropeAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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