RF Bipolar Transistors NPN Germanium Amp
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | CEL |
产品种类 Product Category | RF Bipolar Transistors |
RoHS | Details |
Transistor Type | Bipolar |
技术 Technology | SiGe |
Transistor Polarity | NPN |
Continuous Collector Current | 35 mA |
最小工作温度 Minimum Operating Temperature | - 65 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Single |
安装风格 Mounting Style | SMD/SMT |
Collector- Base Voltage VCBO | 5 V |
DC Current Gain hFE Max | 220 at 6 mA at 2 V |
Operating Frequency | 110000 MHz |
类型 Type | RF Silicon Germanium |
Pd-功率耗散 Pd - Power Dissipation | 150 mW |
工厂包装数量 Factory Pack Quantity | 1 |
NESG3033M14-A | NESG3033M14-T3-A | |
---|---|---|
描述 | RF Bipolar Transistors NPN Germanium Amp | RF Bipolar Transistors NPN Silicn Germanium Amp/Oscilltr |
Product Attribute | Attribute Value | Attribute Value |
制造商 Manufacturer |
CEL | CEL |
产品种类 Product Category |
RF Bipolar Transistors | RF Bipolar Transistors |
RoHS | Details | Details |
Transistor Type | Bipolar | Bipolar |
技术 Technology |
SiGe | SiGe |
Transistor Polarity | NPN | NPN |
Continuous Collector Current | 35 mA | 0.035 A |
最小工作温度 Minimum Operating Temperature |
- 65 C | - 65 C |
最大工作温度 Maximum Operating Temperature |
+ 150 C | + 150 C |
Configuration | Single | Single |
Collector- Base Voltage VCBO | 5 V | 5 V |
DC Current Gain hFE Max | 220 at 6 mA at 2 V | 220 at 6 mA at 2 V |
Operating Frequency | 110000 MHz | 110000 MHz |
类型 Type |
RF Silicon Germanium | RF Silicon Germanium |
Pd-功率耗散 Pd - Power Dissipation |
150 mW | 150 mW |
工厂包装数量 Factory Pack Quantity |
1 | 10000 |
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