d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
Document Number: 67941
S11-1178-Rev. A, 13-Jun-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiS780DN
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 1 A
0.42
14.5
5
7.5
7
T
C
= 25 °C
18
50
0.53
29
10
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
0.3
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
722
194
64
16.3
7.3
2.2
2
1.1
9
18
10
10
7
11
14
9
2.2
18
35
20
20
14
22
28
18
ns
24.5
11
nC
pF
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, I
D
= 15 A
30
0.0110
0.0145
25
0.0135
0.0175
0.017
1
30
1
2.3
± 100
0.150
10
V
nA
mA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 67941
S11-1178-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiS780DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
V
GS
= 10 V thru 4 V
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
30
6
20
V
GS
= 3 V
10
V
GS
= 2 V
0
0.5
1
1.5
2
2.5
4
T
C
= 25
°C
T
C
= - 55
°C
2
T
C
= 125
°C
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
0
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
0.022
Transfer Characteristics
1000
0.019
R
DS(on)
- On-Resistance (Ω)
800
V
GS
= 4.5 V
C - Capacitance (pF)
C
iss
0.016
600
0.013
400
C
oss
200
C
rss
0
0.010
V
GS
= 10 V
0.007
0
10
20
30
40
50
I
D
- Drain Current (A)
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.8
R
DS(on)
- On-Resistance (Normalized)
I
D
= 10 A
I
D
= 15 A
1.6
V
GS
= 10 V
1.4
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 15 V
6
V
DS
= 10 V
4
V
DS
= 20 V
1.2
V
GS
= 4.5 V
1.0
2
0.8
0
0
3.4
6.8
10.2
13.6
Q
g
- Total Gate Charge (nC)
17.0
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 67941
S11-1178-Rev. A, 13-Jun-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiS780DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
0.10
I
D
= 15 A
0.08
T
J
= 25 °C
1
10
I
S
- Source Current (A)
0.06
0.1
0.04
T
J
= 125
°C
0.02
T
J
= 25
°C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
10
-1
10
-2
30 V
I
R
- Reverse Current (A)
On-Resistance vs. Gate-to-Source Voltage
120
96
10
-3
20 V
-4
10
Power (W)
75
100
125
150
72
48
10
-5
10 V
10
-6
10
-7
0
25
50
T
J
- Temperature (°C)
24
0
0.001
0.01
0.1
1
10
Time (s)
Reverse Current (Schottky)
100
I
DM
Limited
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
I
D
Limited
100 μs
1 ms
1
Limited by R
DS(on)
*
0.1
T
C
= 25
°C
Single Pulse
0.01
0.01
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 67941
S11-1178-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiS780DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
32
I
D
- Drain Current (A)
24
16
Package Limited
8
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
35
2.0
28
1.6
Power (W)
Power (W)
21
1.2
14
0.8
7
0.4
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67941
S11-1178-Rev. A, 13-Jun-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
与云数据库相比，小型计算机是专门为网络边缘的去中心化坚固计算而构建的。通过将应用程序、分析和处理服务移动到更靠近数据生成源的位置，业务运营可以获得改进的实时计算应用程序性能。 l 从奔腾到酷睿i5的可扩展CPU性能 l 智能电源点火管理和CAN总线网络支持 l 无线局域网和广域网LTE连接 l 丰富的I/O可扩展性，包括PoE、PCI、PCIe、COM l 适用于宽工作温度和宽电压输入的坚固...[详细]
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