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NDC7003P
May 2002
NDC7003P
Dual P-Channel PowerTrench
MOSFET
General Description
These dual P-Channel Enhancement Mode Power Field
Effect Transistors are produced using Fairchild’s
proprietary Trench Technology. This very high density
process has been designed to minimize on-state
resistance, provide rugged and reliable performance
and fast switching. This product is particularly suited to
low voltage applications requiring a low current high
side switch.
Features
•
–0.34A, –60 V.
R
DS(ON)
= 5
Ω
@ V
GS
= –10 V
R
DS(ON)
= 7
Ω
@ V
GS
= –4.5 V
•
Low gate charge
•
Fast switching speed
•
High performance trench technology for low R
DS(ON)
•
SuperSOT
TM
-6 package: small footprint (72%
smaller than standard SO-8); low profile (1mm thick)
D2
S1
D1
4
5
G2
3
2
1
SuperSOT
TM
-6
S2
G1
6
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Ratings
–60
±20
(Note 1a)
Units
V
V
A
W
–0.34
–1
0.96
0.9
0.7
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
°C/W
Package Marking and Ordering Information
Device Marking
.03P
Device
NDC7003P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2002
Fairchild Semiconductor Corporation
NDC7003P Rev B(W)
NDC7003P
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage,
(Note 2)
I
D
= –250
µA
V
GS
= 0 V,
I
D
= –250
µA,
Referenced to 25°C
V
DS
= –48 V,
V
GS
=
±20
V,
V
GS
= 0 V
V
DS
= 0 V
–60
–57
–1
±100
V
mV/°C
µA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On-State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
I
D
= –0.34 A
V
GS
= –10 V,
V
GS
= –4.5 V, I
D
= –0.25 A
V
GS
= –10 V,I
D
= –0.34 A, T
J
=125°C
V
DS
= –10 V
V
GS
= –10 V
V
DS
= –10 V,
I
D
= –0.34 A
–1
–1.9
3.2
1.2
1.5
1.9
–3.5
V
mV/°C
5
7.5
10
Ω
I
D(on)
g
FS
–1
700
A
mS
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
V
DS
= –25 V,
f = 1.0 MHz
V
GS
= 15mV,
V
GS
= 0 V,
66
13
6
pF
pF
pF
Ω
f = 1.0 MHz
11.2
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –25 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
Ω
3.2
10
8
1
6.4
20
16
2
2.2
ns
ns
ns
ns
nC
nC
nC
V
DS
= –25 V,
V
GS
= –10 V
I
D
= –0.34 A,
1.6
0.3
0.3
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V,
I
S
= –0.34 A
(Note 2)
Voltage
–
0.34
–0.8
–1.4
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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