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RN1130MFV(TPL3)

产品描述Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 100Kohms
产品类别分立半导体    晶体管   
文件大小163KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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RN1130MFV(TPL3)概述

Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 100Kohms

RN1130MFV(TPL3)规格参数

参数名称属性值
厂商名称Toshiba(东芝)
Reach Compliance Codeunknown
Is SamacsysN
Base Number Matches1

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RN1130MFV
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1130MFV
0.8±0.05
0.32±0.05
0.13±0.05
1.BASE
2.EMITTER
3.COLLECTOR
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
1.2±0.05
0.8±0.05
Unit: mm
0.22±0.05
0.4
1
2
3
1.2±0.05
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2130MFV
Equivalent Circuit
VESM
Absolute Maximum Ratings
(Ta = 25°C)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
50
50
10
100
150
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-1L1A
Weight: 1.5 mg (typ.)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4
mm
×
25.4 mm
×
1.6 mm)
Note:
Land Pattern Example
0.5
0.45
(unit: mm)
1.15
0.4
0.45
0.4
0.4
Start of commercial production
0.5±0.05
0.4
2005-04
1
2014-03-01

RN1130MFV(TPL3)相似产品对比

RN1130MFV(TPL3) RN1130MFVTL3T
描述 Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 100Kohms Bipolar Transistors - Pre-Biased 50V VCBO 50V VCEO 100mA IC 150mA PC

 
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