CPH3355
Power MOSFET
–30V, 156mΩ, –2.5A, Single P-Channel
Features
•
On-resistance RDS(on)1=120m
Ω
(typ)
•
4V drive
•
Halogen free compliance
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Electrical Connection
P-Channel
3
Specifications
Absolute Maximum Ratings
at Ta = 25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
Power Dissipation
When mounted on ceramic substrate
(900mm
×0.8mm)
Junction Temperature
Storage Temperature
Tj
Tstg
150
−55
to +150
°C
°C
TL
2
1
Value
–30
±20
–2.5
–10
Unit
V
V
A
A
Symbol
VDSS
VGSS
ID
IDP
2
Packing Type:TL
1.0
W
Marking
PD
WM
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm
×0.8mm)
2
Symbol
Value
Unit
°C/W
R
θJA
125
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
December 2014 - Rev. 3
1
Publication Order Number :
CPH3355/D
LOT No.
CPH3355
Electrical Characteristics
at Ta
=
25°C
Value
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
Static Drain to Source On-State Resistance
RDS(on)2
RDS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=−2.5A, VGS=0V
VDS=−15V, VGS=−10V, ID=−2.5A
See specified Test Circuit
20
10.6
3.9
0.6
0.8
–0.86
−1.5
ns
ns
nC
nC
nC
V
VDS=−10V, f=1MHz
Conditions
min
ID=–1mA, VGS=0V
VDS=–30V, VGS=0V
VGS=±16V, VDS=0V
VDS=–10V, ID=–1mA
VDS=–10V, ID=–1A
ID=–1A, VGS=–10V
ID=–0.5A, VGS=–4.5V
ID=–0.5A, VGS=–4V
–1.2
1.9
120
187
213
172
51
36
4.5
4.2
156
262
299
–30
–1
±10
–2.6
typ
max
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
0V
--10V
VIN
VDD= --15V
ID= --1A
RL=15Ω
D
VOUT
VIN
PW=10μs
D.C.≤1%
G
P.G
CPH3355
50Ω
S
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2
CPH3355
Package Dimensions
CPH3355-TL-H/ CPH3355-TL-W
CPH3
CASE 318BA
ISSUE O
Unit : mm
1 : Gate
2 : Source
3 : Drain
Recommended Soldering
Footprint
0.6
1.4
0.95
0.95
ORDERING INFORMATION
Device
CPH3355-TL-H
CPH3355-TL-W
Package
CPH3, SC-59
SOT-23, TO-236
Shipping
3,000
pcs. / reel
Note
Pb-Free
and
Halogen Free
Note on usage : Since the CPH3355 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
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5
2.4
Microchip MCU
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