BYT62
www.vishay.com
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
949539
MECHANICAL DATA
Case:
SOD-57
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
APPLICATIONS
• High voltage rectification diode
ORDERING INFORMATION
(Example)
DEVICE NAME
BYT62
BYT62
ORDERING CODE
BYT62-TR
BYT62-TAP
TAPED UNITS
5000 per 10" tape and reel
5000 per ammopack
MINIMUM ORDER QUANTITY
25 000
25 000
PARTS TABLE
PART
BYT62
TYPE DIFFERENTIATION
V
R
= 2400 V; I
F(AV)
= 350 mA
PACKAGE
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak reverse
voltage
Peak forward surge current
Average forward current
Non repetitive reverse avalanche energy
Junction temperature
Storage temperature range
TEST CONDITION
See electrical characteristics
t
p
= 10 ms, half sine wave
R
thJA
60
K/W
I
(BR)R
= 1 A, inductive load
SYMBOL
V
R
= V
RRM
I
FSM
I
F(AV)
E
R
T
j
T
stg
VALUE
2400
10
350
60
175
- 55 to + 190
UNIT
V
A
mA
mJ
°C
°C
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
SYMBOL
R
thJA
VALUE
60
UNIT
K/W
Rev. 1.8, 11-Sep-12
Document Number: 86033
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYT62
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
I
F
= 200 mA
Forward voltage
I
F
= 1 A
I
F
= 1 A, T
j
= 175 °C
I
F
= 1 A, T
j
= - 40 °C
V
R
= V
RRM
Reverse current
Reverse breakdown voltage
Reverse recovery time
V
R
= V
RRM
, T
j
= 175 °C
V
R
= V
RRM
, T
j
= - 40 °C
I
R
= 100 μA
l
F
= 0.5 A, l
R
= 1 A, i
R
= 0.25 A
SYMBOL
V
F
V
F
V
F
V
F
I
R
I
R
I
R
V
(BR)R
t
rr
MIN.
-
-
-
-
-
-
-
2500
-
TYP.
-
-
-
-
-
-
-
-
-
MAX
3
3.6
2.9
4
5
250
400
-
5
UNIT
V
V
V
V
μA
μA
nA
V
μs
TYPICAL CHARACTERISTICS
(T
amb
= 25
C,
unless otherwise specified)
P
R
- Max. Reverse Power Dissipation (mW)
600
500
R
thJA
= 30 K/W
400
300
R
thJA
= 60 K/W
200
100
V
R
= V
RRM
0
0
40
80
120
160
200
95 9727
10
T
j
= 175 °C
I
F
- Forward Current (A)
1
T
j
= 25 °C
0.1
0.01
T
j
= - 40 °C
0.001
0
1
2
3
4
5
6
7
95 9725
T
j
- Junction Temperature (°C)
V
F
- Forward Voltage (V)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 3 - Max. Forward Current vs. Forward Voltage
1000
V
R
= V
RRM
100
I
R
- Reverse Current (μA)
10
1
0.1
0
95 9726
40
80
120
160
200
T
j
- Junction Temperature (°C)
Fig. 2 - Max. Reverse Current vs. Junction Temperature
Rev. 1.8, 11-Sep-12
Document Number: 86033
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYT62
www.vishay.com
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-57
0.82 (0.032) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
Vishay Semiconductors
Rev. 1.8, 11-Sep-12
Document Number: 86033
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
3.6 (0.142) max.
20543
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www.vishay.com
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Revision: 08-Feb-17
1
Document Number: 91000