New Product
Si4688DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
R
DS(on)
(Ω)
0.011 at V
GS
= 10 V
0.0145 at V
GS
= 4.5 V
I
D
(A)
12
9.8
FEATURES
•
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• 100 % UIS Tested
APPLICATIONS
• Notebook PC
- Core
- System Power
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information:
Si4688DY-T1-E3 (Lead (Pb)-free)
Si4688DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
8
7
6
5
D
D
D
D
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
2.5
1.6
- 55 to 150
2.3
20
20
1.4
0.9
mJ
W
°C
12
9.5
40
1.3
10 s
30
± 20
8.9
7.1
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
43
73
19
Maximum
50
90
25
°C/W
Unit
Document Number: 69996
S09-0394-Rev. B, 09-Mar-09
www.vishay.com
1
New Product
Si4688DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.3 A, dI/dt = 100 A/µs
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
0.9
V
DS
= 15 V, V
GS
= 5 V, I
D
= 12 A
V
DS
= 15 V, V
GS
= 10 V, I
D
= 12 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
1580
295
140
13.2
25.4
5.3
4.3
1.8
13
10
33
10
25
2.7
20
15
50
15
40
ns
Ω
20
38
nC
pF
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 12 A
V
GS
= 4.5 V, I
D
= 9.8 A
V
DS
= 15 V, I
D
= 12 A
I
S
= 2.3 A, V
GS
= 0 V
30
0.009
0.012
32
0.76
1.1
0.011
0.0145
1.0
3.0
± 100
1
5
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
35
30
V
GS
= 10 V thru 5 V
4V
I
D
- Drain Current (A)
40
35
30
25
20
15
T
C
= 125 °C
10
5
25 °C
- 55 °C
I
D
- Drain Current (A)
25
20
15
10
5
3V
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
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2
Transfer Characteristics
Document Number: 69996
S09-0394-Rev. B, 09-Mar-09
New Product
Si4688DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.020
2000
C
iss
R
DS(on)
- On-Resistance (Ω)
0.016
V
GS
= 4.5 V
C - Capacitance (pF)
1600
0.012
V
GS
= 10 V
0.008
1200
800
0.004
400
C
rss
C
oss
0.000
0
5
10
15
20
25
30
0
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
V
DS
= 15 V
I
D
= 12 A
8
R
DS(on)
- On-Resistance
1.4
1.6
V
GS
= 10 V
I
D
= 12 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
(Normalized)
6
1.2
4
1.0
2
0.8
0
0
5
10
15
20
25
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
30
0.05
On-Resistance vs. Junction Temperature
I
S
- Source Current (A)
T
J
= 150 °C
10
R
DS(on)
- On-Resistance (Ω)
0.04
0.03
I
D
= 12 A
0.02
T
J
= 25 °C
0.01
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 69996
S09-0394-Rev. B, 09-Mar-09
www.vishay.com
3
New Product
Si4688DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.4
30
0.2
I
D
= 250
µA
V
GS(th)
Variance (V)
0.0
Power (W)
24
18
- 0.2
12
- 0.4
6
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
150
0
10-
2
10-
1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
DS(on)
*
I
DM
Limited
10
I
D
- Drain Current (A)
1 ms
I
D(on)
Limited
10 ms
100 ms
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
* V
GS
1
10
100
V
DS
- Drain-to-Source Voltage (V)
minimum V
GS
at which R
DS(on)
is specified
1s
10 s
DC
1
0.1
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 71
°C/W
t
1
t
2
Single Pulse
0.01
10-
4
10-
3
10-
2
10-
1
1
Square Wave Pulse Duration (s)
3. T
JM
-
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 69996
S09-0394-Rev. B, 09-Mar-09
New Product
Si4688DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-
4
10-
3
10-
2
10-
1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?69996.
Document Number: 69996
S09-0394-Rev. B, 09-Mar-09
www.vishay.com
5
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