IRF6621PbF
IRF6621TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
PD - 97093
RoHS Compliant
l
Lead-Free (Qualified up to 260°C Reflow)
l
Application Specific MOSFETs
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses and Switching Losses
l
Low Profile (<0.7mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface Mount Techniques
l
V
DSS
Q
g
tot
V
GS
Q
gd
4.2nC
R
DS(on)
Q
gs2
1.0nC
R
DS(on)
Q
oss
6.9nC
30V max ±20V max 7.0mΩ@ 10V 9.3mΩ@ 4.5V
Q
rr
10nC
V
gs(th)
1.8V
11.7nC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
DirectFET ISOMETRIC
Description
The IRF6621PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6621PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6621PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
25
Typical R DS (on) (mΩ)
Max.
30
±20
12
9.6
55
96
13
9.6
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Avalanche Current
Continuous Drain Current, V
GS
@ 10V
g
e
@ 10V
e
@ 10V
f
h
12
10
8
6
4
2
0
0
4
8
ID= 9.6A
A
Single Pulse Avalanche Energy
Ãg
mJ
A
ID = 12A
20
15
TJ = 125°C
10
TJ = 25°C
5
2.0
4.0
6.0
8.0
VGS, Gate-to-Source Voltage (V)
10.0
VDS = 24V
VDS= 15V
12
16
20
24
28
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
Fig 1.
Typical On-Resistance Vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.29mH, R
G
= 25Ω, I
AS
= 9.6A.
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1
5/24/06
IRF6621PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
31
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
24
7.0
9.3
1.8
-5.1
–––
–––
–––
–––
–––
11.7
3.3
1.0
4.2
3.2
5.2
6.9
2.0
12
14
16
4.1
1460
310
170
–––
–––
9.1
12.1
2.25
–––
1.0
150
100
-100
–––
17.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
ns
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 12A
i
V
GS
= 4.5V, I
D
= 9.6A
i
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 9.6A
V
DS
= 15V
V
mΩ
V
mV/°C
µA
nA
S
mV/°C Reference to 25°C, I
D
= 1mA
nC
V
GS
= 4.5V
I
D
= 9.6A
See Fig. 15
V
DS
= 15V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
i
I
D
= 9.6A
Clamped Inductive Load
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
g
–––
–––
–––
0.8
9.8
10
1.0
15
15
V
ns
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
96
Min.
–––
Typ. Max. Units
–––
53
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 9.6A, V
GS
= 0V
i
T
J
= 25°C, I
F
= 9.6A
di/dt = 420A/µs
i
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF6621PbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
e
Power Dissipation
e
Power Dissipation
f
Power Dissipation
Operating Junction and
Parameter
Max.
2.2
1.4
42
270
-40 to + 150
Units
W
Peak Soldering Temperature
Storage Temperature Range
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
el
Junction-to-Ambient
jl
Junction-to-Ambient
kl
Junction-to-Case
fl
Junction-to-Ambient
Linear Derating Factor
100
Parameter
Typ.
–––
12.5
20
–––
1.0
0.017
Max.
58
–––
–––
3.0
–––
Units
°C/W
Junction-to-PCB Mounted
eÃ
W/°C
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
1
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
4
R
5
R
5
τ
C
A
τ
τ
5
Ri (°C/W)
1.6195
2.1406
22.2887
20.0457
11.9144
τi
(sec)
0.000126
0.001354
0.375850
7.410000
99
τ
1
τ
2
τ
3
τ
4
τ
5
Ci=
τi/Ri
Ci=
τi/Ri
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Mounted on minimum footprint full size board with metalized
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink.
R
θ
is measured at
T
J
of approximately 90°C.
Used double sided cooling, mounting pad with large heatsink.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
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3
IRF6621PbF
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
1
2.5V
0.1
0.1
1
≤60µs
PULSE WIDTH
Tj = 25°C
10
100
1
0.1
2.5V
≤60µs
PULSE WIDTH
Tj = 150°C
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Output Characteristics
1.5
ID = 12A
VGS = 4.5V
VGS = 10V
ID, Drain-to-Source Current (A)
100
TJ = 150°C
TJ = 25°C
10
TJ = -40°C
Typical RDS(on) (Normalized)
VDS = 15V
≤60µs
PULSE WIDTH
3.0
3.5
4.0
4.5
5.0
1.0
1
0.1
1.5
2.0
2.5
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 6.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Fig 7.
Normalized On-Resistance vs. Temperature
20
TJ = 25°C
16
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
Ciss
1000
Typical RDS (on) (mΩ)
Coss = Cds + Cgd
C, Capacitance(pF)
12
Coss
Crss
100
1
10
VDS , Drain-to-Source Voltage (V)
100
8
4
0
20
40
60
80
100
Fig 8.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 9.
Typical On-Resistance Vs.
Drain Current and Gate Voltage
ID, Drain Current (A)
4
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IRF6621PbF
1000
ID, Drain-to-Source Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
100
TJ = 150°C
TJ = 25°C
TJ = -40°C
100
10
10msec
1
100µsec
1msec
10
0.1
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
0.01
TA = 25°C
Tj = 150°C
Single Pulse
0.1
1.0
10.0
100.0
VDS , Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
Fig11.
Maximum Safe Operating Area
2.5
60
50
ID, Drain Current (A)
40
30
20
10
0
25
50
75
100
125
150
TC, Case Temperature (°C)
2.0
ID = 250µA
1.5
1.0
-75
-50
-25
0
25
50
75
100
125
150
TJ, Junction Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
60
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
EAS, Single Pulse Avalanche Energy (mJ)
50
3.0A
4.3A
BOTTOM
9.6A
TOP
40
30
20
10
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy Vs. Drain Current
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